Oxide Scale Formation on Iron-Chromium Alloys in Elevated Temperature Air Environments

CORROSION ◽  
1981 ◽  
Vol 37 (12) ◽  
pp. 700-711 ◽  
Author(s):  
P. Fabis ◽  
R. Heidersbach ◽  
C. Brown ◽  
T. Rockett
Keyword(s):  
Raman Spectroscopy ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Experimental Program ◽  
Oxide Scales ◽  
Chromium Alloys ◽  
Spectroscopy Instrumentation ◽  
Commercial Iron ◽  
Iron Chromium

Abstract Oxide scales formed on metals at elevated temperatures may be different, both chemically and structurally, from the scales on the metal once it has cooled to room temperature. This paper discusses Raman spectroscopy instrumentation for the in-situ identification of scales formed on metal surfaces exposed to gaseous environments. The results of an experimental program to characterize scales formed on two commercial iron-chromium alloys, AISI 446 and 502, in air and oxygen environments are also presented.

Corrosion Product Formation in Simulated Energy Systems

CORROSION ◽  
1982 ◽  
Vol 38 (4) ◽  
pp. 191-201 ◽  
Author(s):  
P. Fabis ◽  
C. Brown ◽  
T. Rockett ◽  
R. Heidersbach
Keyword(s):  
Raman Spectroscopy ◽  
Hydrogen Sulfide ◽  
Elevated Temperature ◽  
Alloy Composition ◽  
Energy Systems ◽  
Product Formation ◽  
Chromium Alloys ◽  
Ir And Raman ◽  
Commercial Iron ◽  
Iron Chromium

Abstract Two commercial iron-chromium alloys (AISI 446 and AISI 502) were exposed to elevated temperature hydrogen sulfide and chloride environments. Scale formation was studied using infrared (IR) and Raman spectroscopy as the principle analysis methods. The scales formed are discussed in terms of temperature of formation, duration of exposure, and alloy composition. Comparisons are made to scales formed on pure iron and chromium in the same environments.

scholarly journals BCAbox Algorithm Expands Capabilities of Raman Microscope for Single Organelles Assessment

Biosensors ◽  
2018 ◽  
Vol 8 (4) ◽  
pp. 106 ◽  
Author(s):  
Andrey N. Kuzmin ◽  
Artem Pliss ◽  
Alex Rzhevskii ◽  
Adrian Lita ◽  
Mioara Larion
Keyword(s):  
Raman Spectroscopy ◽  
Raman Spectra ◽  
Live Cells ◽  
Spectroscopy Instrumentation ◽  
Precise Analysis ◽  
Express Analysis ◽  
Immediate Analysis ◽  
Software Toolbox ◽  
Cellular Organelles

Raman microspectroscopy is a rapidly developing technique, which has an unparalleled potential for in situ proteomics, lipidomics, and metabolomics, due to its remarkable capability to analyze the molecular composition of live cells and single cellular organelles. However, the scope of Raman spectroscopy for bio-applications is limited by a lack of software tools for express-analysis of biomolecular composition based on Raman spectra. In this study, we have developed the first software toolbox for immediate analysis of intracellular Raman spectra using a powerful biomolecular component analysis (BCA) algorithm. Our software could be easily integrated with commercial Raman spectroscopy instrumentation, and serve for precise analysis of molecular content in major cellular organelles, including nucleoli, endoplasmic reticulum, Golgi apparatus, and mitochondria of either live or fixed cells. The proposed software may be applied in broad directions of cell science, and serve for further advancement and standardization of Raman spectroscopy.

In-situ Measurement of GaAs Optical Constants and Surface Quality, as Functions of Temperature

1991 ◽  
Vol 222 ◽  
Author(s):  
Huade Yao ◽  
Paul G. Snyder
Keyword(s):  
Room Temperature ◽  
Optical Constants ◽  
Molecular Beam ◽  
Elevated Temperatures ◽  
Native Oxide ◽  
Time Data ◽  
Gaas Sample ◽  
Optical Thermometer ◽  
Surface Changes

ABSTRACTIn-situ spectroscopic ellipsometry (SE) was applied to monitor GaAs (100) surface changes induced at elevated temperatures inside an ultrahigh vacuum (UHV) chamber (<1×10−9 torr base pressure, without As overpressure). The real time data showed clearly the evolution of the native-oxide desorption at ∼577°C, on a molecular-beam-epitaxy (MBE)-grown GaAs (100) surface. In addition, surface degradation was found before and after the oxide desorption. A clean and smooth surface was obtained from an arsenic-capped, MBE-grown GaAs sample, after the arsenic coating was evaporated at ∼350 °C inside the UHV. Pseudodielectric functions <ε>GaAs, from 1.6 eV to 4.5 eV, were obtained through the SE measurements, from this oxide-free surface, at temperatures ranging from room temperature (RT) to ∼610 °C. These <ε> data were used as reference data to develop an algorithm for determining surface temperatures from in-situ SE measurements, thus turning the SE instrument into a sensitive optical thermometer.

In-Situ Raman Spectroscopy Studies of Room-Temperature and Hydrothermal Reactions

2012 ◽  
Vol 1444 ◽  
Author(s):  
Brendan T. McGrail ◽  
Laurent J. Jouffret ◽  
Eric M. Villa ◽  
Peter C. Burns
Keyword(s):  
Raman Spectroscopy ◽  
Continuous Monitoring ◽  
Room Temperature ◽  
Model Systems ◽  
Optical Systems ◽  
In Situ Raman Spectroscopy ◽  
In Situ Raman ◽  
Parr Instrument Company ◽  
Spectroscopy Studies

ABSTRACTBy contracting with the Parr Instrument Company and Bruker Optical Systems, we have developed a system for continuous monitoring of hydrothermal and room temperature reactions by Raman spectroscopy. Using the uranyl peroxide cage cluster {[UO2(O2)(OH)]16[UO2(OM)2]4}24- (denoted {U20R}) and a coordination polymer made from uranyl ions and 4,4’-biphenyldicarboxylate as model systems, we demonstrate the spectroscopically observable changes associated with reaction progress and crystallization.

The frictional behaviour of iron and iron-chromium alloys at elevated temperatures

Wear ◽  
1977 ◽  
Vol 45 (2) ◽  
pp. 199-209 ◽  
Author(s):  
D.J. Barnes ◽  
F.H. Stott ◽  
G.C. Wood
Keyword(s):  
Elevated Temperatures ◽  
Chromium Alloys ◽  
Frictional Behaviour ◽  
Iron Chromium

Electron microscope studies of climb of dissociated dislocations

1978 ◽  
Vol 36 (1) ◽  
pp. 324-325
Author(s):  
C.B. Carter ◽  
D. Cherns ◽  
P.B. Hirsch ◽  
H. Saka
Keyword(s):  
Electron Microscopy ◽  
Electron Microscope ◽  
Point Defects ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Al Alloys ◽  
Weak Beam ◽  
High Supersaturation ◽  
Beam Technique

The mechanism of climb of dissociated dislocations in f.c.c. metals and alloys is not well understood. Climb of dislocations by absorption or emission of vacancies at existing jogs in dissociated dislocations has been observed using the “weak-beam” technique of electron microscopy, but the mechanism of nucleation of jogs is not clear. In this paper we report some results of experiments designed to study the nucleation problem, and more generally the mechanism of absorption of point defects under conditions of high supersaturation.Thin (111) sections of deformed single crystals of Cu-Al alloys, of various compositions, have been electron irradiated in an AEI EM7 HVEM up to 1 MeV, either at room temperature, or elevated temperatures up to 200°C, using a goniometer heating stage. Observations under weak beam conditions have been made a) in situ in the HVEM b) at 100kV in an JEM100B, following irradiation in the HVEM. Interstitials produced by the irradiation are expected to be preferentially attracted to the dislocations because of the strong dislocation-interstitial interaction.

Islanding and Surface Diffusion in Semiconductor Heteroepitaxy: Ge on Si

1987 ◽  
Vol 102 ◽  
Author(s):  
G. J. Fisanick ◽  
H.-J. Gossmann ◽  
P. Kuo
Keyword(s):  
Surface Diffusion ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Size Distributions ◽  
Beam Irradiation ◽  
Island Size ◽  
Uniform Growth ◽  
Extensive Surface

ABSTRACTIslanding and surface diffusion for Ge on Si(111)7×7 and Si(100)2×1 surfaces were examined in a UHV apparatus with in situ scanning Auger/SEM capabilities. At room-temperature uniform growth is observed, while elevated temperatures lead to Stranski-Krastanov growth with complex island size distributions. Extensive surface diffusion is observed on Si(100)2×l; however, surface diffusion is demonstrated to be extremely sensitive to contamination with carbon on the order of ≈0.05 ML, as well as to e-beam irradiation.

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