Electrochemical Characteristics of Molybdenum/Aluminum-Neodymium Double Thin Film in Tetramethyl-Ammonium Hydroxide Solution

CORROSION ◽  
2007 ◽  
Vol 63 (9) ◽  
pp. 835-842
Author(s):  
J-H. Huang ◽  
S-C. Yen
Keyword(s):  
Thin Film ◽  
Ammonium Hydroxide ◽  
Electrochemical Characteristics ◽  
Ammonium Hydroxide Solution ◽  
Hydroxide Solution ◽  
Tetramethyl Ammonium ◽  
Tetramethyl Ammonium Hydroxide

scholarly journals Doehlert design in the optimization of ultrasound assisted dissolution of fish fillet samples with tetramethyl ammonium hydroxide for metals determination using FAAS

2019 ◽  
Vol 273 ◽  
pp. 71-76 ◽  
Author(s):  
Daniélen dos Santos Silva ◽  
Carine Souza dos Santos ◽  
Luzia Aparecida Pando ◽  
Mário Sérgio Rocha Gomes ◽  
Cleber Galvão Novaes ◽  
...  
Keyword(s):  
Ammonium Hydroxide ◽  
Doehlert Design ◽  
Fish Fillet ◽  
Tetramethyl Ammonium ◽  
Tetramethyl Ammonium Hydroxide ◽  
Ultrasound Assisted

Separation and Recovery of Tetramethyl Ammonium Hydroxide with Mesoporous Silica Having a Hexagonal Structure (MCM-41)

2012 ◽  
Vol 30 (7) ◽  
pp. 724-734 ◽  
Author(s):  
Syouhei Nishihama ◽  
Miuki Murakami ◽  
Naoko Y. Igarashi ◽  
Katsutoshi Yamamoto ◽  
Kazuharu Yoshizuka
Keyword(s):  
Mesoporous Silica ◽  
Ammonium Hydroxide ◽  
Hexagonal Structure ◽  
Tetramethyl Ammonium ◽  
Tetramethyl Ammonium Hydroxide ◽  
Mcm 41

Experimental investigations of anisotropic etching of Si in tetramethyl ammonium hydroxide

1996 ◽  
Vol 74 (S1) ◽  
pp. 79-84 ◽  
Author(s):  
S. Naseh ◽  
L. M. Landsberger ◽  
M. Kahrizi ◽  
M. Paranjape
Keyword(s):  
Microelectromechanical Systems ◽  
Ammonium Hydroxide ◽  
Anisotropic Etching ◽  
Experimental Investigations ◽  
Rate Variation ◽  
Sensors And Actuators ◽  
Tetramethyl Ammonium ◽  
Tetramethyl Ammonium Hydroxide ◽  
Subtle Effect ◽  
Experimental Findings

Anisotropic etching of silicon in tetramethyl ammonium hydroxide (TMAH) is receiving attention as a relatively nontoxic alternative anisotropic etchant for silicon (Si), for the fabrication of microelectromechanical systems, sensors, and actuators. This work presents experimental investigations on several aspects of anisotropic etching of Si in TMAH. The effects of temperature and concentration on etch rates of {100} and {110} wafers are characterized. Several previously unreported experimental findings aimed at better understanding the atomic level mechanisms are presented: underetch-rate variation with mask-edge deviation, an investigation of stirring, and a subtle effect of applied bending stress.

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