Silicon anisotropic etching in Triton‐mixed and isopropyl alcohol‐mixed tetramethyl ammonium hydroxide solution

2015 ◽  
Vol 10 (9) ◽  
pp. 469-471 ◽  
Author(s):  
Mingqiu Yao ◽  
Bin Tang ◽  
Kazuo Sato ◽  
Wei Su
1996 ◽  
Vol 74 (S1) ◽  
pp. 79-84 ◽  
Author(s):  
S. Naseh ◽  
L. M. Landsberger ◽  
M. Kahrizi ◽  
M. Paranjape

Anisotropic etching of silicon in tetramethyl ammonium hydroxide (TMAH) is receiving attention as a relatively nontoxic alternative anisotropic etchant for silicon (Si), for the fabrication of microelectromechanical systems, sensors, and actuators. This work presents experimental investigations on several aspects of anisotropic etching of Si in TMAH. The effects of temperature and concentration on etch rates of {100} and {110} wafers are characterized. Several previously unreported experimental findings aimed at better understanding the atomic level mechanisms are presented: underetch-rate variation with mask-edge deviation, an investigation of stirring, and a subtle effect of applied bending stress.


2019 ◽  
Vol 273 ◽  
pp. 71-76 ◽  
Author(s):  
Daniélen dos Santos Silva ◽  
Carine Souza dos Santos ◽  
Luzia Aparecida Pando ◽  
Mário Sérgio Rocha Gomes ◽  
Cleber Galvão Novaes ◽  
...  

2012 ◽  
Vol 30 (7) ◽  
pp. 724-734 ◽  
Author(s):  
Syouhei Nishihama ◽  
Miuki Murakami ◽  
Naoko Y. Igarashi ◽  
Katsutoshi Yamamoto ◽  
Kazuharu Yoshizuka

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