scholarly journals Current – voltage measurements of Al/a-Se/Au Schottky diode solar cells

2021 ◽  
Author(s):  
Mayyada Muttar Fdhala ◽  
◽  
Ayser A. Hemed ◽  
Ramiz A. Al-Ansari ◽  
Raad M. Al-Haddad ◽  
...  
Keyword(s):  
Power Density ◽  
Schottky Diode ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Technique ◽  
Good Efficiency ◽  
Annealing Temperatures ◽  
Current Voltage ◽  
Evaporation Technique

Schottky Diode (SD) Al/a-Se/Au as a solar cell (SC) was prepared by thermal evaporation technique (TET) on glass thin slide as a substrate under vacuum (10!" mbar). The Schottky Barrier (SB) have been prepared with different thicknesses (300, 500 and 700) nm in room temperature and (343) K annealing temperature. The current-voltage (IV) physical properties of the SB have got rectification properties and approved as a SC. This cell is developed with increased annealing temperatures and thickness of layers of SD. Experience under lighting shows good efficiency (η), which increased linearly with both thickness and annealing temperatures from (0.0318% to 4.064%) and from (0.0318% to 0.4778%). This is for three values of lighting power density (160, 230, 400) 𝑚𝑊/𝑐𝑚# in which the behave is similar. The best efficiency obtained in this work was (15.286)% at a power density of 400 𝑚𝑊/𝑐𝑚# , with thickness 700nm and 343K annealing temperature. Also (12.407)% at 230 𝑚𝑊/𝑐𝑚#, with thickness 500nm for the same annealing temperature.

scholarly journals the photoconductive properties of pbxs1-x films

2006 ◽  
Vol 3 (3) ◽  
pp. 534-539
Author(s):  
Baghdad Science Journal
Keyword(s):  
Room Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Technique ◽  
Quantitative Ratio ◽  
Optical Detector ◽  
Evaporation Technique

Optical detector was manufactured Bashaddam thermal evaporation technique at room temperature under pressure rays studied characteristics of reactive Scout efficiency quantitative ratio of the signal and the ability equivalent to noise

Characteristics of Alumina Films Formed by the Annealed Aluminum Films at High Temperatures in Air

2013 ◽  
Vol 652-654 ◽  
pp. 371-374
Author(s):  
Jing Lv
Keyword(s):  
Phase Transformations ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Technique ◽  
Aluminum Films ◽  
Alumina Films ◽  
Measurement Results ◽  
Evaporation Technique ◽  
Α Al2o3 ◽  
Quartz Substrates

Al films (about 40 nm) were prepared on quartz substrates by thermal evaporation technique, and subsequently annealed in air for 1h at temperature ranging from 600 to 1300oC. The characteristics of the annealed films were investigated in this paper. The measurement results of XRD and Raman show that crystalline phase transformations of the annealed films will convert from γ, γ and α, up to α-Al2O3 with the increasing of the annealing temperature at 600 oC, 1200 oC, to 1300oC. AFM and transmission spectra reveal the effects of phase transformations on their morphology and optical properties.

Electrical conductivity studies of mixed phthalocyanine thin films

Open Physics ◽  
2005 ◽  
Vol 3 (1) ◽  
Author(s):  
Abraham Varghese ◽  
C. Menon
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Copper Phthalocyanine ◽  
Thermal Evaporation Technique ◽  
Nickel Phthalocyanine ◽  
Mixed Films ◽  
Evaporation Technique

AbstractThin films of mixed of Copper Phthalocyanine (CuPc) and Nickel Phthalocyanine (NiPc) are deposited onto a pure glass substrate by a simultaneous thermal evaporation technique at room temperature. The material D.C. electrical conductivity of films at room temperature and also films annealed at 523 K has been investigated. The optical absorption and band gaps of the films are also measured. The results show that the electrical resistance is lower for the mixed films compared with the pure samples and also the optical band gap decreases for the mixed samples compared to the pure samples.

Ion Implanted p+/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor

2006 ◽  
Vol 527-529 ◽  
pp. 819-822
Author(s):  
Fabio Bergamini ◽  
Shailaja P. Rao ◽  
Antonella Poggi ◽  
Fabrizio Tamarri ◽  
Stephen E. Saddow ◽  
...  
Keyword(s):  
Room Temperature ◽  
Annealing Temperature ◽  
Low Pressure ◽  
Cold Wall ◽  
Current Voltage Characteristic ◽  
Process Yield ◽  
Annealing Temperatures ◽  
Current Voltage ◽  
Post Implantation

This work reports the realization and characterization of 4H-SiC p+/n diodes with the p+ anodes made by Al+ ion implantation at 400°C and post-implantation annealing in silane ambient in a cold-wall low-pressure CVD reactor. The Al depth profile was almost box shaped with a height of 6×1019 cm-3 and a depth of 160 nm. Implant anneals were performed in the temperature range from 1600°C to 1700°C. As the annealing temperature was increased, the silane flow rate was also increased. This annealing process yields a smooth surface with a roughness of the implanted area of 1.7 - 5.3 nm with increasing annealing temperature. The resistivity of the implanted layer, measured at room temperature, decreased for increasing annealing temperatures with a minimum value of 1.4 0-cm measured for the sample annealed at 1700°C. Considering only the current-voltage characteristic of a diode that could be modeled as an abrupt p/n junction within the frame of the Shockley theory, the diode process yield and the diode leakage current decreased, respectively, from 93% to 47% and from 2×10-7 Acm-2 to 1×10-8 Acm-2 at 100 V reverse bias, for increasing post implantation annealing temperature.

Structural Properties of Zn-PbI2 Nanostructures

2014 ◽  
Vol 925 ◽  
pp. 164-168 ◽  
Author(s):  
Safaa I. Mohammed ◽  
Y. Al-Douri
Keyword(s):  
Structural Properties ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Thermal Evaporation Technique ◽  
X Ray Diffraction ◽  
Lead Iodide ◽  
X Ray ◽  
Chemical Technique ◽  
Evaporation Technique ◽  
Scanning Electron

The structural properties of Zn-doped and undoped lead iodide ( PbI2 ) nanostructures have been investigated. Zn-doped and undoped of ( PbI2 ) have been grown by chemical technique. Different doped and undoped PbI2 when prepared successfully by thermal evaporation technique an glass substrate at room temperature. Characterization and analysis using scanning electron microscopy (SEM) and X-ray diffraction (XRD) have indicated to the crystalline character. The particle size of Zn-PbI2 is larger than undoped PbI2.

scholarly journals MORPHOLOGICAL AND ELECTRICAL PROPERTIES OF CDSE THIN FILMS PREPARED BY THERMAL EVAPORATION TECHNIQUE

2021 ◽  
Vol 03 (01) ◽  
pp. 39-44
Author(s):  
Asmaa Natiq Mohammed ALI
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Electrical Properties ◽  
Thermal Evaporation ◽  
Mean Free Path ◽  
Thermal Evaporation Technique ◽  
Annealing Temperatures ◽  
Average Grain Size ◽  
Evaporation Technique ◽  
Different Thickness

In this work , CdSe thin films with different thickness (100 and 200) nm have been prepared at RT by thermal evaporation technique on glass substrate under vacuum of 10-5 mbar. These films have been annealed to different annealing temperatures (423,473 and523) K. The morphology structure of the films has been examined using atomic force microscope (AFM) analysis. AFM measurements showed that the average grain size values of CdSe thin films decrease with increasing of annealing temperatures from (RT-523K). While the average grain size values increase with increasing thickness. The electrical properties of these films were studied with different thickness and annealing temperature. The d.c. conductivity for all deposited films decreases with increases of annealing temperatures. The electrical activation energies Ea1 and Ea2 found to decrease with increasing of thicknesses. While increase with increasing of annealing temperatures. From Hall effect result, it is found that the carriers concentration increase with increasing of annealing temperatures. While decrease with increasing of thickness. Hall mobility, drift velocity, carrier life time and mean free path decrease with increasing of thickness and annealing temperatures

Dependence of Annealing Temperature on the Conductivity Changes of ZnO and MgZnO Nanoparticle Thin Films from Annealing in a Hydrogen Atmosphere at Mild Temperatures

2012 ◽  
Vol 1394 ◽  
Author(s):  
Christine Berven ◽  
Lorena Sanchez ◽  
Sirisha Chava ◽  
Hannah Marie Young ◽  
Joseph Dick ◽  
...  
Keyword(s):  
Room Temperature ◽  
Annealing Temperature ◽  
Hydrogen Atmosphere ◽  
Hydrogen Gas ◽  
Maximum Temperature ◽  
Heating Process ◽  
Temperature Threshold ◽  
Annealing Temperatures ◽  
Nanoparticle Films ◽  
Current Voltage

ABSTRACTWe report apparent robust doping of ZnO and MgxZn1-xO (x ∼20%) nanoparticle films by annealing in hydrogen gas. The annealing was done at sequentially higher temperatures from about 20 °C to 140 °C. The effect of the annealing was determined by comparing current-voltage measurements of the samples at room-temperature and in vacuum after each annealing cycle.The nanoparticles were grown using an aqueous solution and heating process that created thinfilms of ZnO or MgZnO nanoparticles with diameters of about 30 nm. When exposed to hydrogen gas at room-temperature or after annealing at temperatures up to about 100 °C, no measureable changes to the room-temperature vacuum conductivity of the films was observed. However, when the samples were annealed at temperatures above 100 °C, an appreciable robust increase in the room-temperature conductance in vacuum occurred. Annealing at the maximum temperature (∼135-140 °C) resulted in about a factor of about twenty increase in the conductivity. Furthermore, the ratio of the conductance of the ZnO and MgZnO nanoparticle films while being annealed to their conductance at room-temperature were found to increase and then decrease for increasing annealing temperatures. Maximum changes of about five-fold and seven-fold for the MgZnO and ZnO samples, respectively, were found to occur at temperatures just below the annealing temperature threshold for the onset of the robust hydrogen gas doping. Comparisons of these results to other work on bulk ZnO and MgZnO films and reasons for this behavior will be discussed.

scholarly journals Synthesis and Investigation of the Structure and Optical Properties of Nano -Ni-Cr Films

2020 ◽  
pp. 2251-2256
Author(s):  
Jinan H. Awadh
Keyword(s):  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Energy Gap ◽  
Amorphous Structure ◽  
Thermal Evaporation Technique ◽  
Optical Energy Gap ◽  
Average Roughness ◽  
Afm Analysis ◽  
Evaporation Technique ◽  
Xrd Patterns

The thermal evaporation technique was used to prepare the Ni-Cr films with a thickness of 200 nm and a rate of deposition  of 0.22nm/Sec. The annealing was performed at 373 and 473 K. The structural and optical analyses of the grown layers were achieved and XRD patterns showed amorphous structure transferred to polycrystalline for film annealed at 373 and 473 K. AFM analysis showed that the surface of Ni-Cr films is homogenous and the average roughness, optical energy gap and absorption coefficient were increased with increasing annealing temperature (Ta).

Sign in / Sign up

Export Citation Format

Share Document