Electrical conductivity studies of mixed phthalocyanine thin films

Open Physics ◽  
2005 ◽  
Vol 3 (1) ◽  
Author(s):  
Abraham Varghese ◽  
C. Menon

AbstractThin films of mixed of Copper Phthalocyanine (CuPc) and Nickel Phthalocyanine (NiPc) are deposited onto a pure glass substrate by a simultaneous thermal evaporation technique at room temperature. The material D.C. electrical conductivity of films at room temperature and also films annealed at 523 K has been investigated. The optical absorption and band gaps of the films are also measured. The results show that the electrical resistance is lower for the mixed films compared with the pure samples and also the optical band gap decreases for the mixed samples compared to the pure samples.

2019 ◽  
Vol 969 ◽  
pp. 355-360 ◽  
Author(s):  
Piyush Patel ◽  
Vimal Patel ◽  
Sandip Vyas ◽  
Jaydev Patel ◽  
Himanshu Pavagadhi

The III-VI compound semiconductors are important for the fabrication of ionizing radiation detectors, solid-state electrodes, and photosensitive heterostructures, solar cell as well as ionic batteries. In this paper, In2Se2.7Sb0.3 thin films have been grown by thermal evaporation technique onto a with chemically clean glass substrate. Amorphous nature of the films has been discovered by UV-VIS spectrophotometer. The analysis by absorption spectra within the spectral range 200nm -900 nm has been used for the optical characterization of thin films. From these data the optical constants (absorption coefficient (α), refractive index (η), extinction coefficient (k)) and optical band gap (Eg) are studied. The results were discussed, and reported in detail.


2008 ◽  
Vol 2008 ◽  
pp. 1-4 ◽  
Author(s):  
Pankaj Sharma ◽  
S. C. Katyal

The present paper reports the effect of Ge addition on the optical band gap and refractive index of thin films. Thin films of and were prepared by thermal evaporation technique at base pressure  Pa. Optical band gap and refractive index were calculated by analyzing the transmission spectrum in the spectral range 400–1500 nm. The optical band gap decreases while the refractive index increases with the addition of Ge to . The decrease of optical band gap has been explained on the basis of density of states; and the increase in refractive index has been explained on the basis increase in disorder in the system.


2006 ◽  
Vol 3 (3) ◽  
pp. 534-539
Author(s):  
Baghdad Science Journal

Optical detector was manufactured Bashaddam thermal evaporation technique at room temperature under pressure rays studied characteristics of reactive Scout efficiency quantitative ratio of the signal and the ability equivalent to noise


2011 ◽  
Vol 83 (6) ◽  
pp. 065706 ◽  
Author(s):  
Arshad Mahmood ◽  
Shaista R ◽  
A Shah ◽  
U Aziz ◽  
E Ahmed ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document