scholarly journals Simulation of the Optimized Structure of a Laterally Coupled Distributed Feedback (LC-DFB) Semiconductor Laser Above Threshold

2013 ◽  
Vol 3 (5) ◽  
pp. 522-525
Author(s):  
M. Seifouri ◽  
A. Faraji
Keyword(s):  
Active Region ◽  
Semiconductor Laser ◽  
Structural Properties ◽  
Output Power ◽  
Structural Parameters ◽  
Distributed Feedback ◽  
Ridge Width ◽  
Bragg Frequency ◽  
Dfb Semiconductor Laser

In this paper, the laterally coupled distributed feedback semiconductor laser is studied. In the simulations performed, variations of structural parameters such as the grating amplitude a, the ridge width W, the thickness of the active region d, and other structural properties are considered. It is concluded that for certain values ​​of structural parameters, the laser maintains the highest output power, the lowest distortion Bragg frequency δL and the smallest changes in the wavelength λ. Above threshold, output power more than 40mW and SMSR values greater than 50 dB were achieved.

scholarly journals Purely Gain-Coupled Distributed-Feedback Bragg Semiconductor Laser Diode Emitting at 770 nm

2021 ◽  
Vol 11 (4) ◽  
pp. 1531
Author(s):  
Chunkao Ruan ◽  
Yongyi Chen ◽  
Li Qin ◽  
Peng Jia ◽  
Yugang Zeng ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Continuous Wave ◽  
Longitudinal Mode ◽  
Distributed Feedback ◽  
Continuous Wave Output Power ◽  
Semiconductor Laser Diode ◽  
Grating Fabrication ◽  
Mode Suppression ◽  
Micrometer Scale ◽  
Dfb Semiconductor Laser

The transition lines of Mg, K, Fe, Ni, and other atoms lie near 770 nm, therefore, this spectral region is important for helioseismology, solar atmospheric studies, the pumping of atomic clocks, and laser gyroscopes. However, there is little research on distributed-feedback (DFB) semiconductor lasing at 770 nm. In addition, the traditional DFB semiconductor laser requires secondary epitaxy or precision grating preparation technologies. In this study, we demonstrate an easily manufactured, gain-coupled DFB semiconductor laser emitting at 770 nm. Only micrometer scale periodic current injection windows were used, instead of nanoscale grating fabrication or secondary epitaxy. The periodically injected current assures the device maintains single longitudinal mode working in the unetched Fabry–Perot cavity under gain coupled mechanism. The maximum continuous-wave output power reached was 116.3 mW at 20 °C, the maximum side-mode-suppression ratio (SMSR) was 33.25 dB, and the 3 dB linewidth was 1.78 pm.

Integrated Distributed Feedback Laser and Optical Amplifier

1991 ◽  
Vol 240 ◽  
Author(s):  
N. K. Dutta ◽  
J. Lopata ◽  
R. Logan ◽  
T. Tanbun-Ek
Keyword(s):  
Active Region ◽  
Spectral Width ◽  
Optical Amplifier ◽  
Distributed Feedback ◽  
Performance Characteristics ◽  
Distributed Feedback Laser ◽  
Electrical Isolation ◽  
Current Confinement ◽  
Dfb Laser ◽  
And Performance

ABSTRACTThe fabrication and performance characteristics of an integrated distributed feedback (DFB) laser and optical amplifier structure are described. The structure utilizes semi-insulating Fe doped InP layers for current confinement to the active region, electrical isolation between the two sections and for lateral index guiding. The amplified output has a slope of 1 mW/mA of laser current with the amplifier biased at 150 mA which is a factor of 5 larger than that for a typical laser. The laser emits near 1.55 μm and the spectral width under modulation of the amplified output is considerably smaller than that for a DFB laser for the same on/off ratio.

scholarly journals Spectral Linewidth vs. Front Facet Reflectivity of 780 nm DFB Diode Lasers at High Optical Output Power

2018 ◽  
Vol 8 (7) ◽  
pp. 1104 ◽  
Author(s):  
Thanh-Phuong Nguyen ◽  
Hans Wenzel ◽  
Olaf Brox ◽  
Frank Bugge ◽  
Peter Ressel ◽  
...  
Keyword(s):  
Output Power ◽  
Diode Lasers ◽  
Substantial Reduction ◽  
Distributed Feedback ◽  
Optical Output ◽  
Spectral Linewidth ◽  
Facet Reflectivity ◽  
Simulation Results ◽  
Front Facet

The influence of the front facet reflectivity on the spectral linewidth of high power DFB (distributed feedback) diode lasers emitting at 780 nm has been investigated theoretically and experimentally. Characterization of lasers at various front facet reflections showed substantial reduction of the linewidth. This behavior is in reasonable agreement with simulation results. A minimum linewidth of 8 kHz was achieved at an output power of 85 mW with the laser featuring a front facet reflectivity of 30%. The device with a front facet reflectivity of 5% reached the same linewidth value at an output power of 290 mW.

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