Sampled grating distributed feedback (SG DFB) semiconductor laser diode

2007 ◽  
Vol 39 (4) ◽  
pp. 754-757
Author(s):  
S.N. Mohammad
Keyword(s):  
Semiconductor Laser ◽  
Laser Diode ◽  
Distributed Feedback ◽  
Semiconductor Laser Diode ◽  
Sampled Grating ◽  
Dfb Semiconductor Laser

scholarly journals Purely Gain-Coupled Distributed-Feedback Bragg Semiconductor Laser Diode Emitting at 770 nm

2021 ◽  
Vol 11 (4) ◽  
pp. 1531
Author(s):  
Chunkao Ruan ◽  
Yongyi Chen ◽  
Li Qin ◽  
Peng Jia ◽  
Yugang Zeng ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Continuous Wave ◽  
Longitudinal Mode ◽  
Distributed Feedback ◽  
Continuous Wave Output Power ◽  
Semiconductor Laser Diode ◽  
Grating Fabrication ◽  
Mode Suppression ◽  
Micrometer Scale ◽  
Dfb Semiconductor Laser

The transition lines of Mg, K, Fe, Ni, and other atoms lie near 770 nm, therefore, this spectral region is important for helioseismology, solar atmospheric studies, the pumping of atomic clocks, and laser gyroscopes. However, there is little research on distributed-feedback (DFB) semiconductor lasing at 770 nm. In addition, the traditional DFB semiconductor laser requires secondary epitaxy or precision grating preparation technologies. In this study, we demonstrate an easily manufactured, gain-coupled DFB semiconductor laser emitting at 770 nm. Only micrometer scale periodic current injection windows were used, instead of nanoscale grating fabrication or secondary epitaxy. The periodically injected current assures the device maintains single longitudinal mode working in the unetched Fabry–Perot cavity under gain coupled mechanism. The maximum continuous-wave output power reached was 116.3 mW at 20 °C, the maximum side-mode-suppression ratio (SMSR) was 33.25 dB, and the 3 dB linewidth was 1.78 pm.

High Performance InGaAs/AlGaAs Quantum Well Semiconductor Laser Diode with Non-absorption Window

2022 ◽  
Vol 43 (01) ◽  
pp. 110-118
Author(s):  
Cui-cui LIU ◽  
◽  
Nan LIN ◽  
Xiao-yu MA ◽  
Hong-qi JING ◽  
...  
Keyword(s):  
Quantum Well ◽  
Semiconductor Laser ◽  
Laser Diode ◽  
High Performance ◽  
Semiconductor Laser Diode ◽  
Absorption Window

scholarly journals Geometry Monitoring of Rotating Parts of Power Unit with an Adapted Doppler Preprocessor

2021 ◽  
Vol 2057 (1) ◽  
pp. 012091
Author(s):  
D V Kulikov ◽  
S V Dvoynishnikov ◽  
V V Rahmanov ◽  
V A Pavlov ◽  
I K Kabardin
Keyword(s):  
Signal Processing ◽  
Semiconductor Laser ◽  
Light Source ◽  
Power Unit ◽  
Laser Diode ◽  
Semiconductor Laser Diode ◽  
Low Coherence ◽  
Signal Processing Algorithms ◽  
Processing Algorithms ◽  
Dynamic Shape

Abstract Current work is devoted to the development of a device for monitoring the dynamic shape of a power unit. The work is based on the FMCW method. The light source uses a low-coherence semiconductor laser diode. Signal processing is performed on an adapted Doppler processor. The paper describes the methods, hardware and signal processing algorithms.

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