scholarly journals Current-mode CMOS Active Inductor with Applications to Low-Voltage Oscillators

2013 ◽  
Vol 3 (6) ◽  
pp. 540-543
Author(s):  
M. Ma ◽  
Z. Li ◽  
Z. Yao
Keyword(s):  
Negative Feedback ◽  
Power Supply ◽  
Low Voltage ◽  
Current Mode ◽  
Active Inductor ◽  
Transistor Structure ◽  
Current Mirrors ◽  
Active Inductors ◽  
A Current

This paper investigates a current mode active inductor. In the proposed active inductor, three current mirrors have been connected to each other to realize the negative feedback. This active conductor has a two layer transistor structure. A 4.257 GHz, 1.2-V power supply non-inductive LC negative resistor oscillator, base on two of the proposed active inductors, is demonstrated.

scholarly journals A Flux Controlled Memristor using 90nm Technology

2021 ◽  
pp. 1-6
Author(s):  
B.T. Krishna ◽  
◽  
Shaik. mohaseena Salma ◽  
Keyword(s):  
Power Supply ◽  
Power Dissipation ◽  
Power Efficiency ◽  
Current Mode ◽  
Cmos Technology ◽  
Theoretical Simulation ◽  
Transconductance Amplifier ◽  
Higher Power ◽  
Static Power ◽  
A Current

A flux-controlled memristor using complementary metal–oxide–(CMOS) structure is presented in this study. The proposed circuit provides higher power efficiency, less static power dissipation, lesser area, and can also reduce the power supply by using CMOS 90nm technology. The circuit is implemented based on the use of a second-generation current conveyor circuit (CCII) and operational transconductance amplifier (OTA) with few passive elements. The proposed circuit uses a current-mode approach which improves the high frequency performance. The reduction of a power supply is a crucial aspect to decrease the power consumption in VLSI. An offered emulator in this proposed circuit is made to operate incremental and decremental configurations well up to 26.3 MHZ in cadence virtuoso platform gpdk using 90nm CMOS technology. proposed memristor circuit has very little static power dissipation when operating with ±1V supply. Transient analysis, memductance analysis, and dc analysis simulations are verified practically with the Experimental demonstration by using ideal memristor made up of ICs AD844AN and CA3080, using multisim which exhibits theoretical simulation are verified and discussed.

A current-mode bit-block circuit applicable to low-voltage, low-power pipeline video-speed A/D converters

1996 ◽  
Vol 11 (2) ◽  
Author(s):  
Yasuhiro Sugimoto ◽  
Shunsaku Tokito ◽  
Hisao Kakitani ◽  
Eitaro Seta
Keyword(s):  
Low Power ◽  
Low Voltage ◽  
Current Mode ◽  
A Current

Analysis and design of a current-mode bandgap reference with high power supply ripple rejection

2017 ◽  
Vol 68 ◽  
pp. 7-13 ◽  
Author(s):  
Lidan Wang ◽  
Chenchang Zhan ◽  
Junyao Tang ◽  
Shuangxing Zhao ◽  
Guigang Cai ◽  
...  
Keyword(s):  
High Power ◽  
Power Supply ◽  
Current Mode ◽  
Bandgap Reference ◽  
Analysis And Design ◽  
A Current

scholarly journals Current-mode techniques for UWB frequency synthesizers

2021 ◽  
Author(s):  
Dominic DiClemente
Keyword(s):  
Frequency Tuning ◽  
Wide Band ◽  
Current Mode ◽  
Frequency Synthesizers ◽  
Ultra Wide Band ◽  
Phase Locked Loops ◽  
Active Inductor ◽  
Switched Capacitors ◽  
Active Inductors ◽  
Step Down

This thesis deals with current-mode techniques for ultra-wide band applications. An overview of ultra-wide band (UWB) wireless communications is presented. Two standards for UWB data communications, namely direct-synthesis UWB (DS-UWB) and Multi-band orthogonal frequency division multiplexing (MB-OFDM) UWB are presented. MB-OFDM UWB devices must hop among 14 UWB channels within 9.5 ns, imposing stringent constraints on design of frequency synthesizers. A review of the state-of-the-art frequency synthesizers for MB-OFDM UWB applications is provided. Current-mode phase-locked loops with active inductors and active transformers employed in both loop filters and voltage-controlled oscillators are proposed and their performance in analyzed. Current-mode phase-locked loops decouple the PLL dynamic range from the scaling down of the supply voltage. An active-inductor VCO with both coarse and fine frequency adjustment, a hybrid VCO with a step-down passive transformer loaded with an active inductor, and a hybrid VCO with a step-down passive transformer with a varactor are proposed and their performances are analyzed. These VCOs obtain wide frequency tuning ranges without relying on switched back networks. To meet the timing constraint of UWB frequency synthesizers, Current-mode techniques are further developed for UWB frequency synthesizers. An active inductor with a bank of switched capacitors is proposed to provide fast locking. The bank of switched capacitors eliminates the frequency acquisition locking time of the frequency synthesizer, allowing 9.5 ns phase locking time. The proposed current-mode phase-locked loops, active-inductors oscillators and hybrid oscillators were designed and implemented in TSMC-0.18 μm and IBM-0.13 μm CMOS technologies.

scholarly journals A New Translinear-Based Dual-Output Square-Rooting Circuit

2008 ◽  
Vol 2008 ◽  
pp. 1-5 ◽  
Author(s):  
Montree Kumngern ◽  
Kobchai Dejhan
Keyword(s):  
Temperature Stability ◽  
Current Mode ◽  
Input Current ◽  
Absolute Value ◽  
Current Mirrors ◽  
Input Range ◽  
Simulation Results ◽  
Simulator Program ◽  
Mode Technique ◽  
A Current

A new wide input range square-rooting circuit is presented. The proposed circuit consists of a dual translinear loop, an absolute value circuit, and current mirrors. A current-mode technique is used to provide wide input range with simple circuitry. The output signal of the proposed circuit is the current which is proportional to the square root of input current. The proposed square-rooting circuit was confirmed by using PSpice simulator program. The simulation results demonstrate that the proposed circuit provides the excellent temperature stability with wide input current range.

scholarly journals A Flux Controlled Memristor using 90nm Technology

2021 ◽  
Vol 1 (2) ◽  
pp. 1-7
Author(s):  
Krishna B.T. ◽  
mohaseena Salma Shaik.
Keyword(s):  
Power Supply ◽  
Power Dissipation ◽  
Power Efficiency ◽  
Current Mode ◽  
Cmos Technology ◽  
Theoretical Simulation ◽  
Transconductance Amplifier ◽  
Higher Power ◽  
Static Power ◽  
A Current

A flux-controlled memristor using complementary metal–oxide–(CMOS) structure is presented in this study. The proposed circuit provides higher power efficiency, less static power dissipation, lesser area, and can also reduce the power supply by using CMOS 90nm technology. The circuit is implemented based on the use of a second-generation current conveyor circuit (CCII) and operational transconductance amplifier (OTA) with few passive elements. The proposed circuit uses a current-mode approach which improves the high-frequency performance. The reduction of a power supply is a crucial aspect to decrease the power consumption in VLSI. An offered emulator in this proposed circuit is made to operate incremental and decremental configurations well up to 26.3 MHZ in cadence virtuoso platform gpdk using 90nm CMOS technology. proposed memristor circuit has very little static power dissipation when operating with ±1V supply. Transient analysis, memductance analysis, and dc analysis simulations are verified practically with the Experimental demonstration by using ideal memristor made up of ICs AD844AN and CA3080, using multisim which exhibits theoretical simulation are verified and discussed.

A Sub-1 V Temperature-Insensitive-PSR Bandgap Reference with Complementary Loop Locking

2019 ◽  
Vol 28 (03) ◽  
pp. 1950047 ◽  
Author(s):  
Guo-Cheng Huang ◽  
Hai-Gang Yang ◽  
Tao Yin ◽  
Xiao-Dong Xu ◽  
Yuan-Ming Zhu
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Temperature Coefficient ◽  
Power Supply ◽  
Room Temperature ◽  
Low Voltage ◽  
Cmos Process ◽  
Bandgap Reference ◽  
Temperature Variations ◽  
Current Mirrors

This paper presents a novel low-voltage bandgap reference with improved power supply rejection (PSR). The proposed circuit adopts a complementary loop locking approach for stabilizing the drain-source voltages of the current mirrors, which gives rise to a boost of the PSR performance by more than 30[Formula: see text]dB over [Formula: see text]–110∘C and at 1-V supply. An analysis shows that the PSR of the proposed bandgap reference is typically characterized with its insensitivity to temperature variations. The circuit is designed with a commercial 0.18-[Formula: see text]m CMOS process. The experiment results of Monte Carlo simulation demonstrate that the average PSR with 1-V supply is [Formula: see text][Formula: see text]dB at DC and is [Formula: see text][Formula: see text]dB at 1[Formula: see text]kHz (attained under a room temperature condition of 27∘C). And the temperature coefficient of the DC-based PSR is about 0.83%/∘C at 1-V supply, significantly decreased by three–six folds compared to other conventional designs. The quiescent current consumed is only about 13.5[Formula: see text][Formula: see text]A.

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