scholarly journals VERY LARGE SCALE INTEGRATION TINY CHIP WITH NANOPOWER SENSOR APPLICATIONS

2012 ◽  
pp. 116-120
Author(s):  
K.JAYA SWAROOP ◽  
M.I. SUDHARAYAPPA ◽  
CH. JAYAPRAKASH ◽  
V.SURENDRA BABU
Keyword(s):  
Power Consumption ◽  
Power Dissipation ◽  
Large Scale ◽  
Supply Voltage ◽  
Vlsi Design ◽  
Electrical Characterization ◽  
Cmos Process ◽  
Process Technology ◽  
Voltage Range ◽  
Sensor Applications

Semiconductor devices have rapidly advanced over the past years increasing switching(on and off) speed and density of the device, causing an increase in power consumption and power dissipation; accordingly, the issues have been considered and improved . In CMOS 0.5μm process, the designed VLSI mirror-amplifier had power dissipation of 8.41 milliwatts. This technique is changed in this paper. The biasing is done in two steps proved to be correct procedure to improve overall power consumption. Source voltage was considered as 3V for the MOSIS process technology. Layout ,simulation and electrical characterization of the design were carried out by MENTOR GRAPHICS tool and CAD tools were used for the design Holding the scaling and process unchanged at 0.5μm as the previous design, the new VLSI design had power dissipation of 4.39 nanowatts in second step by reducing the dynamic loss. Multi-die chip placement is done for fabrication. More advanced 0.35um CMOS process is used for low threshold voltage and enhanced supply voltage range. This paper presents details of the key research works, results, completed chip layout and applications of the chip.

High-Swing, High-Resolution, Low-Power, Low-Area Voltage-Mode LTA/WTA Circuits

2015 ◽  
Vol 24 (07) ◽  
pp. 1550103 ◽  
Author(s):  
Mohammad Soleimani ◽  
Siroos Toofan ◽  
Mostafa Yargholi
Keyword(s):  
High Resolution ◽  
Low Power ◽  
Power Dissipation ◽  
Supply Voltage ◽  
Rank Order ◽  
Active Area ◽  
Total Power ◽  
Common Source ◽  
Cmos Process ◽  
Process Technology

In this paper, a general architecture for analog implementation of loser/winner-take-all (LTA/WTA) and other rank order circuits is presented. This architecture is composed of a differential amplifier with merged n-inputs and a merged common-source with active load (MCSAL) circuit to choose the desired input. The advantages of the proposed structure are simplicity, very high resolution, very low supply voltage requirements, very low output resistor, low power dissipation, low active area and simple expansion for multiple inputs by adding only three transistors for each extra input. The post-layout simulation results of proposed circuits are presented by HSPICE software in 0.35-μm CMOS process technology. The total power dissipation of proposed circuits is about 110-μW. Also, the total active area is about 550-μm2 for five-input proposed circuits, and would be negligibly increased for each extra input.

scholarly journals A 65 nm Duplex Transconductance Path Up-Conversion Mixer for 24 GHz Automotive Short-Range Radar Sensor Applications

Sensors ◽  
2022 ◽  
Vol 22 (2) ◽  
pp. 594
Author(s):  
Tahesin Samira Delwar ◽  
Abrar Siddique ◽  
Manas Ranjan Biswal ◽  
Prangyadarsini Behera ◽  
Yeji Choi ◽  
...  
Keyword(s):  
Power Dissipation ◽  
Short Range ◽  
Noise Figure ◽  
Supply Voltage ◽  
Common Source ◽  
Cmos Process ◽  
Radar Sensor ◽  
Sensor Applications ◽  
The Common ◽  
24 Ghz

A 24 GHz highly-linear upconversion mixer, based on a duplex transconductance path (DTP), is proposed for automotive short-range radar sensor applications using the 65-nm CMOS process. A mixer with an enhanced transconductance stage consisting of a DTP is presented to improve linearity. The main transconductance path (MTP) of the DTP includes a common source (CS) amplifier, while the secondary transconductance path (STP) of the DTP is implemented as an improved cross-quad transconductor (ICQT). Two inductors with a bypass capacitor are connected at the common nodes of the transconductance stage and switching stage of the mixer, which acts as a resonator and helps to improve the gain and isolation of the designed mixer. According to the measured results, at 24 GHz the proposed mixer shows that the linearity of output 1-dB compression point (OP1dB) is 3.9 dBm. And the input 1-dB compression point (IP1dB) is 0.9 dBm. Moreover, a maximum conversion gain (CG) of 2.49 dB and a noise figure (NF) of 3.9 dB is achieved in the designed mixer. When the supply voltage is 1.2 V, the power dissipation of the mixer is 3.24 mW. The mixer chip occupies an area of 0.42 mm2.

High-Speed Low-Power Bulk-Controlled Sense-Amplifier D Flip-Flop

2015 ◽  
Vol 713-715 ◽  
pp. 1042-1047
Author(s):  
Xiao Ying Deng ◽  
Yan Yan Mo ◽  
Jian Hui Ning
Keyword(s):  
Power Dissipation ◽  
High Speed ◽  
Large Scale ◽  
Supply Voltage ◽  
Operating Conditions ◽  
Cmos Process ◽  
Flip Flop ◽  
Sense Amplifier ◽  
Operation Speed ◽  
Circuits Vlsi

With the development of digital very large scale integrated circuits (VLSI), how to reduce the power dissipation and improve the operation speed are two aspects among the most concerned fields. Based on sense amplifier technology and bulk-controlled technique, this paper proposes a bulk-controlled sense-amplifier D flip-flop (BCSADFF). Firstly, this flip-flop can change the threshold voltage of the NMOS by inputting control signals from the substrate so as to control the operating current. Secondly, the traditional RS flip-flop composed of two NAND gates is improved to a couple of inverters based on pseudo-PMOS dynamic technology. Therefore, the proposed BCSADFF can both effectively reduce the power dissipation and improve the circuit speed. Thirdly, the designed BCSADFF can work normally with ultra-dynamic voltage scaling from 1.8 V to 0.6V for SMIC 0.18-um standard CMOS process. Lastly, the Hspice simulation result shows that, compared with the traditional sense-amplifier D flip-flop (SADFF), the power dissipation of the BCSADFF is significantly reduced under the same operating conditions. When the power supply voltage is 0.9V, the power dissipation and delay of the SADFF is 6.54uW and 0.386ns while that of the proposed BCSADFF is 2.09uW and 0.237ns.

scholarly journals A Novel Cross-Latch Shift Register Scheme for Low Power Applications

2020 ◽  
Vol 11 (1) ◽  
pp. 129
Author(s):  
Po-Yu Kuo ◽  
Ming-Hwa Sheu ◽  
Chang-Ming Tsai ◽  
Ming-Yan Tsai ◽  
Jin-Fa Lin
Keyword(s):  
Power Consumption ◽  
Supply Voltage ◽  
Electrical Power ◽  
Average Power ◽  
Leakage Power ◽  
Shift Register ◽  
Cmos Process ◽  
Average Power Consumption ◽  
Simulation Results ◽  
Layout Area

The conventional shift register consists of master and slave (MS) latches with each latch receiving the data from the previous stage. Therefore, the same data are stored in two latches separately. It leads to consuming more electrical power and occupying more layout area, which is not satisfactory to most circuit designers. To solve this issue, a novel cross-latch shift register (CLSR) scheme is proposed. It significantly reduced the number of transistors needed for a 256-bit shifter register by 48.33% as compared with the conventional MS latch design. To further verify its functions, this CLSR was implemented by using TSMC 40 nm CMOS process standard technology. The simulation results reveal that the proposed CLSR reduced the average power consumption by 36%, cut the leakage power by 60.53%, and eliminated layout area by 34.76% at a supply voltage of 0.9 V with an operating frequency of 250 MHz, as compared with the MS latch.

scholarly journals A Low-Power 12-Bit 20 MS/s Asynchronously Controlled SAR ADC for WAVE ITS Sensor Based Applications

Sensors ◽  
2021 ◽  
Vol 21 (7) ◽  
pp. 2260
Author(s):  
Khuram Shehzad ◽  
Deeksha Verma ◽  
Danial Khan ◽  
Qurat Ul Ain ◽  
Muhammad Basim ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
Intelligent Transportation System ◽  
Cmos Process ◽  
Process Technology ◽  
Back Issue ◽  
Digital To Analog Converter ◽  
Analog To Digital ◽  
Switching Method

A low power 12-bit, 20 MS/s asynchronously controlled successive approximation register (SAR) analog-to-digital converter (ADC) to be used in wireless access for vehicular environment (WAVE) intelligent transportation system (ITS) sensor based application is presented in this paper. To optimize the architecture with respect to power consumption and performance, several techniques are proposed. A switching method which employs the common mode charge recovery (CMCR) switching process is presented for capacitive digital-to-analog converter (CDAC) part to lower the switching energy. The switching technique proposed in our work consumes 56.3% less energy in comparison with conventional CMCR switching method. For high speed operation with low power consumption and to overcome the kick back issue in the comparator part, a mutated dynamic-latch comparator with cascode is implemented. In addition, to optimize the flexibility relating to the performance of logic part, an asynchronous topology is employed. The structure is fabricated in 65 nm CMOS process technology with an active area of 0.14 mm2. With a sampling frequency of 20 MS/s, the proposed architecture attains signal-to-noise distortion ratio (SNDR) of 65.44 dB at Nyquist frequency while consuming only 472.2 µW with 1 V power supply.

Ground-Adjustable Inductor for Wide-Tuning VCO Design

2012 ◽  
Vol 256-259 ◽  
pp. 2373-2378
Author(s):  
Wu Shiung Feng ◽  
Chin I Yeh ◽  
Ho Hsin Li ◽  
Cheng Ming Tsao
Keyword(s):  
Power Consumption ◽  
Tuning Range ◽  
Supply Voltage ◽  
Wide Band ◽  
Ultra Wide Band ◽  
Cmos Process ◽  
Voltage Controlled Oscillator ◽  
Wide Tuning Range ◽  
Chip Area ◽  
Ground Plate

A wide-tuning range voltage-controlled oscillator (VCO) with adjustable ground-plate inductor for ultra-wide band (UWB) application is presented in this paper. The VCO was implemented by standard 90nm CMOS process at 1.2V supply voltage and power consumption of 6mW. The tuning range from 13.3 GHz to 15.6 GHz with phase noise between -99.98 and -115dBc/Hz@1MHz is obtained. The output power is around -8.7 to -9.6dBm and chip area of 0.77x0.62mm2.

scholarly journals Novel Design of Low-Power High-Speed Hybrid Full Adder Design using Gate Diffusion Input (GDI) Technique

2020 ◽  
Vol 9 (12) ◽  
pp. 323-328
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
Critical Path ◽  
Circuit Simulation ◽  
Full Adder ◽  
Cmos Process ◽  
Path Delay ◽  
Process Technology ◽  
Xnor Gate

VLSI technology become one of the most significant and demandable because of the characteristics like device portability, device size, large amount of features, expenditure, consistency, rapidity and many others. Multipliers and Adders place an important role in various digital systems such as computers, process controllers and signal processors in order to achieve high speed and low power. Two input XOR/XNOR gate and 2:1 multiplexer modules are used to design the Hybrid Full adders. The XOR/XNOR gate is the key punter of power included in the Full adder cell. However this circuit increases the delay, area and critical path delay. Hence, the optimum design of the XOR/XNOR is required to reduce the power consumption of the Full adder Cell. So a 6 New Hybrid Full adder circuits are proposed based on the Novel Full-Swing XOR/XNOR gates and a New Gate Diffusion Input (GDI) design of Full adder with high-swing outputs. The speed, power consumption, power delay product and driving capability are the merits of the each proposed circuits. This circuit simulation was carried used cadence virtuoso EDA tool. The simulation results based on the 90nm CMOS process technology model.

Design of High Gain Folded Cascode OTA-Based Transconductance–Capacitance Loop Filter for PLL Applications

2021 ◽  
pp. 2150263
Author(s):  
Priti Gupta ◽  
Sanjay Kumar Jana
Keyword(s):  
Power Consumption ◽  
Supply Voltage ◽  
High Gain ◽  
Cmos Process ◽  
Operational Transconductance Amplifier ◽  
Loop Filter ◽  
Transconductance Amplifier ◽  
Dc Gain ◽  
Unity Gain ◽  
Folded Cascode

This paper deals with the designing of low-power transconductance–capacitance-based loop filter. The folded cascode-based operational transconductance amplifier (OTA) is designed in this paper with the help of quasi-floating bulk MOSFET that achieved the DC gain of 88.61[Formula: see text]dB, unity gain frequency of 97.86[Formula: see text]MHz and power consumption of 430.62[Formula: see text][Formula: see text]W. The proposed OTA is compared with the exiting OTA structure which showed 19.50% increase in DC gain and 15.11% reduction in power consumption. Further, the proposed OTA is used for the designing of transconductance–capacitance-based loop filter that has been operated at [Formula: see text]3[Formula: see text]dB cut-off frequency of 30.12[Formula: see text]MHz with the power consumption of 860.90[Formula: see text][Formula: see text]W at the supply voltage of [Formula: see text][Formula: see text]V. The transistor-level simulation has been done in 0.18[Formula: see text][Formula: see text]m CMOS process.

Low-Power and Reference-Less Data and Clock Recovery Circuit for Visible Light Receivers

2018 ◽  
Author(s):  
Ming-Cheng Liu ◽  
Paul C.-P. Chao ◽  
Soh Sze Khiong
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Visible Light ◽  
Low Voltage ◽  
Supply Voltage ◽  
Clock And Data Recovery ◽  
Optical Receiver ◽  
Clock Recovery ◽  
Cmos Process ◽  
Rf Receiver

In this paper a low power all-digital clock and data recovery (ADCDR) with 1Mhz frequency has been proposed. The proposed circuit is designed for optical receiver circuit on the battery-less photovoltaic IoT (Internet of Things) tags. The conventional RF receiver has been replaced by the visible light optical receiver for battery-less IoT tags. With this proposed ADCDR a low voltage, low power consumption & tiny IoT tags can be fabricated. The proposed circuit achieve the maximum bandwidth of 1MHz, which is compatible with the commercial available LED and light sensor. The proposed circuit has been fabricated in TSMC 0.18um 1P6M standard CMOS process. Experimental results show that the power consumption of the optical receiver is approximately 5.58uW with a supply voltage of 1V and the data rate achieves 1Mbit/s. The lock time of the ADCDR is 0.893ms with 3.31ns RMS jitter period.

scholarly journals DIGITAL CONTROLLED OSCILLATOR (DCO) FOR ALL DIGITAL PHASE-LOCKED LOOP (ADPLL) – A REVIEW

2019 ◽  
Vol 82 (1) ◽  
Author(s):  
Florence Choong ◽  
Mamun Ibne Reaz ◽  
Mohamad Ibrahim Kamaruzzaman ◽  
Md. Torikul Islam Badal ◽  
Araf Farayez ◽  
...  
Keyword(s):  
Supply Voltage ◽  
Complementary Metal Oxide Semiconductor ◽  
Phase Locked Loop ◽  
Cmos Technology ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
Process Technology ◽  
Chip Area ◽  
Digital Phase ◽  
Low Power Dissipation

Digital controlled oscillator (DCO) is becoming an attractive replacement over the voltage control oscillator (VCO) with the advances of digital intensive research on all-digital phase locked-loop (ADPLL) in complementary metal-oxide semiconductor (CMOS) process technology. This paper presents a review of various CMOS DCO schemes implemented in ADPLL and relationship between the DCO parameters with ADPLL performance. The DCO architecture evaluated through its power consumption, speed, chip area, frequency range, supply voltage, portability and resolution. It can be concluded that even though there are various schemes of DCO that have been implemented for ADPLL, the selection of the DCO is frequently based on the ADPLL applications and the complexity of the scheme. The demand for the low power dissipation and high resolution DCO in CMOS technology shall remain a challenging and active area of research for years to come. Thus, this review shall work as a guideline for the researchers who wish to work on all digital PLL.

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