scholarly journals 0.5-7.5 GHZ LOW-POWER, INDUCTORLESS CURRENT FOLDED MIXER IN 0.18-μM CMOS FOR BROADBAND APPLICATIONS

2013 ◽  
pp. 112-116
Author(s):  
ZAHRA GHANE FASHTALI ◽  
MAHROKH MAGHSOODI ◽  
REZA EBRAHIMI ATANI ◽  
MEHRGAN MAHDAVI
Keyword(s):  
Low Power ◽  
Power Dissipation ◽  
Noise Figure ◽  
Cmos Process ◽  
Conversion Gain ◽  
Fully Differential ◽  
Dc Power ◽  
Maximum Conversion ◽  
Cell Topology ◽  
Down Conversion

A fully differential low-power down-conversion mixer using a TSMC 0.18-μm CMOS process is presented in this paper. The proposed mixer is based on a folded double-balanced Gilbert cell topology that enhances conversion gain and reduces power dissipation. Though, this mixer is designed for 5.8 GHz ISM band applications, but at 0.5-7.5 GHz, the proposed mixer exhibits a maximum conversion gain of 12dB, maximum IIP3 of -2.5 dBm, maximum input 1-dB compression point of -13 dBm, the minimum DSB noise figure of 9.2 dB and a dc power consumption of 2.52 mW at 1.8 V power supply. Also, this circuit architecture increases port-to-port isolations to above 140 dB. Moreover this mixer is suitable for broadband applications.

A Low-Power, High-Gain, and Low-Noise 802.11a Down-Conversion Mixer in 0.35-μm SiGe Bi-CMOS Technology

2017 ◽  
Vol 26 (09) ◽  
pp. 1750134 ◽  
Author(s):  
Jun-Da Chen ◽  
Song-Hao Wang
Keyword(s):  
Low Power ◽  
Noise Figure ◽  
Supply Voltage ◽  
Cmos Technology ◽  
High Gain ◽  
Low Noise ◽  
Cmos Process ◽  
Conversion Gain ◽  
Dc Power ◽  
Down Conversion

The paper presents a novel 5.15[Formula: see text]GHz–5.825[Formula: see text]GHz SiGe Bi-CMOS down-conversion mixer for WLAN 802.11a receiver. The architecture used is based on Gilbert cell mixer, the combination of MOS transistors and HBT BJT transistor device characteristics. The hetero-junction bipolar transistor (HBT) topology is adopted at the transconductance stage to improve power gain and reduce noise factor, and the LO series-parallel CMOS switch topology will be applied to reduce supply voltage and dc power at the switching stage. This mixer is implemented in TSMC 0.35-[Formula: see text]m SiGe Bi-CMOS process, and the chip size including the test pads is 1.175*0.843[Formula: see text]mm2. The main advantages for the proposed mixer are high conversion gain, a moderate linearity, low noise figure, and low power. The post-simulation results achieved are as follows: 14[Formula: see text]dB power conversion gain, [Formula: see text]6[Formula: see text]dBm input third-order intercept point (IIP3), 6.85[Formula: see text]dB double side band (DSB) noise figure. The total mixer current is about 1.54[Formula: see text]mA from 1.4[Formula: see text]V supply voltage including output buffer. The total dc power consumption is 2.15[Formula: see text]mW.

scholarly journals Development of Low-Noise Small-Area 24 GHz CMOS Radar Sensor

2016 ◽  
Vol 2016 ◽  
pp. 1-12
Author(s):  
Min Yoon ◽  
Jee-Youl Ryu
Keyword(s):  
Low Power ◽  
Power Dissipation ◽  
Small Area ◽  
Noise Figure ◽  
Low Noise ◽  
Cmos Process ◽  
Radar Sensor ◽  
Low Power Dissipation ◽  
Chip Size ◽  
24 Ghz

We present a low-noise small-area 24 GHz CMOS radar sensor for automotive collision avoidance. This sensor is based on direct-conversion pulsed-radar architecture. The proposed circuit is implemented using TSMC 0.13 μm RF (radio frequency) CMOS (fT/fmax=120/140 GHz) technology, and it is powered by a 1.5 V supply. This circuit uses transmission lines to reduce total chip size instead of real bulky inductors for input and output impedance matching. The layout techniques for RF are used to reduce parasitic capacitance at the band of 24 GHz. The proposed sensor has low cost and low power dissipation since it is realized using CMOS process. The proposed sensor showed the lowest noise figure of 2.9 dB and the highest conversion gain of 40.2 dB as compared to recently reported research results. It also showed small chip size of 0.56 mm2, low power dissipation of 39.5 mW, and wide operating temperature range of −40 to +125°C.

An inductorless active mixer using stacked nMOS/pMOS configuration and LO shaping technique

2018 ◽  
Vol 32 (11) ◽  
pp. 1850129 ◽  
Author(s):  
Benqing Guo ◽  
Jun Chen ◽  
Xuebing Wang ◽  
Hongpeng Chen
Keyword(s):  
Noise Figure ◽  
Power Level ◽  
Cmos Process ◽  
Conversion Gain ◽  
Input Frequency ◽  
Frequency Range ◽  
Shaping Technique ◽  
Active Mixer ◽  
Down Conversion ◽  
Second Order Nonlinearity

In this paper, a CMOS active down-conversion mixer is presented for wideband applications. Specifically, a LO generation chain is suggested to convert AC LO signal to shaped trapezoid burst, which reduces the sinusoidal LO power level requirement by the mixer. The current-reuse technique by stacked nMOS/pMOS architecture is used to save the power consumption of the circuit. Moreover, this complementary configuration is also employed to compensate second-order nonlinearity of the circuit. Implemented in a 0.18-[Formula: see text]m CMOS process, post-simulations show that, driven by only −10 dBm sinusoidal LO signal, the proposed inductorless mixer provides a maximal conversion gain of 15.7 dB and a noise figure (NF) of 9.1–12 dB across RF input frequency range 0.5–1.6 GHz. The IIP3 and IP1dB of 3.5 dBm and −4.8 dBm are obtained, respectively. The mixer core only consumes 3.6 mW from a 1.8-V supply.

scholarly journals Low Phase Noise and High Conversion Gain Oscillator Mixer Constructed with a 0.18-μm CMOS Technology

2009 ◽  
Vol 2009 ◽  
pp. 1-7
Author(s):  
Chin-Lung Yang ◽  
Chih-Hsiang Peng ◽  
Yi-Chyun Chiang
Keyword(s):  
Phase Noise ◽  
Power Dissipation ◽  
Noise Figure ◽  
Cmos Technology ◽  
Conversion Gain ◽  
Design Constraint ◽  
Single Sideband ◽  
Start Up ◽  
Low Phase Noise ◽  
Down Conversion

This paper presents a compact down-conversion oscillator mixer fabricated with a 0.18-μm CMOS technology. The oscillator mixer consists of a conventional nMOS differential coupled oscillator, a switch stage, and a pMOS cross-coupled pair which is used to release the design constraint between the conversion gain and the start-up condition. Since the switch stage and the pMOS cross-coupled pair are stacked on the nMOS differential oscillator, the bias currents of the switch stage and the pMOS cross-coupled pair can be entirely reused, so as to reduce the power dissipation. The experimental results show a conversion gain of 6.5 dB at 2.1 GHz associated with a single-sideband (SSB) noise figure of below 13 dB. The oscillator mixer also exhibits a tuning range of 184 MHz and a phase noise of −116 dBc/Hz at 1-MHz offset from the LO frequency of 6.8 GHz, and it consumes 11 mA from 1.8 V bias voltage.

A 0.5–6.5-GHz 3.9-dB NF 7.2-mW active down-conversion mixer in 65-nm CMOS

2018 ◽  
Vol 32 (23) ◽  
pp. 1850278 ◽  
Author(s):  
Benqing Guo ◽  
Xuebing Wang ◽  
Hongpeng Chen ◽  
Jun Chen
Keyword(s):  
Power Consumption ◽  
Noise Figure ◽  
Cmos Process ◽  
Conversion Gain ◽  
Input Frequency ◽  
Frequency Range ◽  
Text Type ◽  
Current Reuse ◽  
Down Conversion ◽  
Noise Canceling

In the paper, a broadband CMOS active down-conversion mixer is presented. Specifically, a noise-canceling transconductor is developed to reduce the noise figure of the mixer. The current-reuse technique applied to the developed transconductor by stacked nMOS/pMOS architecture not only saves power consumption of the circuit, but also reduces the undesirable parasitics. Moreover, two passive [Formula: see text]-type networks are exploited to absorb internal parasitics of the circuit and guarantee broadband operation. Implemented in an advanced 65-nm CMOS process, post-simulations show that, driven by 0 dBm sinusoidal LO signal, the proposed mixer provides a maximal conversion gain of 15 dB and a NF of 3.9–4.9 dB across RF input frequency range of 0.5–6.5 GHz. The IIP3 and IP1dB of 3.1 and −6.9 dBm are obtained, respectively. The mixer core consumes 7.2 mW from a 1 V supply.

scholarly journals A 60 GHz fully differential LNA in 90 nm CMOS technology

2013 ◽  
Vol 6 (2) ◽  
pp. 109-113 ◽  
Author(s):  
Andrea Malignaggi ◽  
Amin Hamidian ◽  
Georg Boeck
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Transmission Lines ◽  
Noise Figure ◽  
Design Procedure ◽  
Cmos Technology ◽  
High Gain ◽  
Low Noise ◽  
60 Ghz ◽  
Fully Differential

The present paper presents a fully differential 60 GHz four stages low-noise amplifier for wireless applications. The amplifier has been optimized for low-noise, high-gain, and low-power consumption, and implemented in a 90 nm low-power CMOS technology. Matching and common-mode rejection networks have been realized using shielded coplanar transmission lines. The amplifier achieves a peak small-signal gain of 21.3 dB and an average noise figure of 5.4 dB along with power consumption of 30 mW and occupying only 0.38 mm2pads included. The detailed design procedure and the achieved measurement results are presented in this work.

A 260-μW Down-Conversion Demodulator for MICS-Band Receiver

2016 ◽  
Vol 26 (02) ◽  
pp. 1750027 ◽  
Author(s):  
Chia-Hung Chang ◽  
Cihun-Siyong Alex Gong ◽  
Jian-Chiun Liou ◽  
Yu-Lin Tsou ◽  
Feng-Lin Shiu ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Low Power Consumption ◽  
Cmos Process ◽  
Communication Services ◽  
Ultra Low Power ◽  
Resistive Feedback ◽  
Mics Band ◽  
Down Conversion ◽  
Implant Communication

This paper showcases a low-power demodulator for medical implant communication services (MICS) applications. Complementary shunt resistive feedback, current reuse configuration, and sub-threshold LO driving techniques are proposed to achieve ultra-low power consumption. The chip has been implemented in standard CMOS process and consumes only 260-[Formula: see text]W.

Low Voltage Low Power Up-Conversion Mixer for Wireless Sensor Networks Node Application

2013 ◽  
Vol 760-762 ◽  
pp. 516-520
Author(s):  
Ge Sun ◽  
Zhi Qun Li ◽  
Chen Jian Wu ◽  
Meng Zhang ◽  
Jia Cao ◽  
...  
Keyword(s):  
Wireless Sensor Networks ◽  
Sensor Networks ◽  
Low Power ◽  
Low Voltage ◽  
Noise Figure ◽  
Cmos Technology ◽  
Negative Resistance ◽  
Wireless Sensor ◽  
Operating Voltage ◽  
Conversion Gain

A low voltage, low power up-conversion mixer is presented here for 2.4GHz wireless sensor networks (WSN). It was based on a double-balanced Gilbert cell type. The current-reuse technique was used to reduce the power consumption and negative-resistance compensation technique was used to improve the conversion gain. The mixer was designed in 0.18μm RF CMOS technology, and was simulated with Cadence SpectreRF. The simulation results indicate that the conversion gain is 6.37dB, the noise figure is 15.36dB and the input 1dB compression point is-10.3dBm, while consuming 1mA current for operating voltage at 1V.

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