Similarities and Differences between Two Researches in Field Electron Emission: A Way to Develop a More Powerful Electron Source

2020 ◽  
Vol 13 (2) ◽  
pp. 171-179

Abstract: This paper discusses the similarities and differences between two studies that deal with resin-coated field-emission cathodes. The two works that are compared within this paper are entitled: Hot Electron Emission from Composite-Insulator Micropoint Cathodes and Methods of Preparation and Characterization of Experimental Field- Emission Cathodes. Within the text, both studies are reviewed and put into context, pointing out and commenting the advantageous features of this type of cathodes. The comparison focuses mainly on the method of preparation including deposition of a thin film on the cathode tip and the characterization of the coating itself. The effect of the coating on the field emission is discussed as well. Keywords: Cold field emission, Epoxylite 478, Epoxylite EPR-4.

2018 ◽  
Vol 228 ◽  
pp. 04003
Author(s):  
Zhenglin Li ◽  
Fuyuan Si ◽  
Miaomiao Wang ◽  
Weigang He ◽  
Yuwei Zhang

Field electron emission currents from nanostructured films always have unsatisfied stability. This paper introduces a photocurrent treatment technique to enhance the filed emission properties, and gives a kind of nanostructured indium oxide film suitable for the technique. The products were prepared on patterned ITO glass substrate by using chemical vapor deposition method. With the increase of reaction time, the morphologies of the films changed from cocoonlike particles to hybrid thin films, and finally flowerlike nanostructures were formed. Photocurrent and field electron emission characteristics of the products have been studied. After photocurrent treatment, the flowerlike indium oxide films show stable field emission current (fluctuation is less than 5%), low field emission threshold (at 7.5 V/m, the current density is 1 mA/cm2) and high enhancement factor of electrical field of 778. The field emission test results validated that the photocurrent treated flowerlike indium oxide films may act as electron emitters and applied in display applications.


2004 ◽  
Vol 95 (3) ◽  
pp. 1537-1549 ◽  
Author(s):  
Y. Gotoh ◽  
M. Nagao ◽  
D. Nozaki ◽  
K. Utsumi ◽  
K. Inoue ◽  
...  

2016 ◽  
Vol 4 (35) ◽  
pp. 8226-8234 ◽  
Author(s):  
Stefania Carapezzi ◽  
Antonio Castaldini ◽  
Filippo Fabbri ◽  
Francesca Rossi ◽  
Marco Negri ◽  
...  

Photo-enhanced field emission from SiC nanowires showed the presence of a saturation region, which is of interest for nanotechnological applications.


2020 ◽  
Vol 15 (2) ◽  
pp. 276-283 ◽  
Author(s):  
Junqi Xu ◽  
Yanrui Wang ◽  
Wenjie Wang ◽  
Zijun Xu ◽  
Yonglei Jia ◽  
...  

Large-scale PrB6 nanowires were fabricated by an effective, catalyst-free, and a simple low-pressure chemical vapor deposition (LPCVD) process. These nanowires, characterized in detail by various analytical instruments, demonstrated the large aspect ratio and high single-crystalline grown along the [001] crystal direction perpendicular to the (001) crystal plane. The field electron emission equipment tests manifest that the asgrown PrB6 products have a low turn-on field (Eto, 2.32 V/μm), a threshold field (Ethr, 4.28 V/μm), a high field enhancement factor (β, 2336), as well as a stable current-density (J) of field-emission. The relationships of the field electron emission parameters, such as J, Eto, and β versus cathode gap (d), have been established when d is increased from 500 μm to 800 μm. The outstanding properties suggest that the PrB6 products may be promising emitters in the cold-field-emission cathode application.


2016 ◽  
Vol 1 (4) ◽  
pp. 304-312 ◽  
Author(s):  
M. T. Cole ◽  
R. J. Parmee ◽  
A. Kumar ◽  
C. M. Collins ◽  
M. H. Kang ◽  
...  

Here we report on a straightforward and rapid means of enhancing the field electron emission performance of nascent vertically aligned multi-walled carbon nanotubes by introducing a polar zwitterionic conjugated polyelectrolyte adlayer at the vacuum–emitter interface.


2005 ◽  
Vol 475-479 ◽  
pp. 3587-3590
Author(s):  
K.J. Liao ◽  
W.L. Wang ◽  
Y.T. Wang ◽  
J.W. Lu ◽  
X.L. Sun

The field electron emission from carbon nanotube films on polycrystalline diamond films was investigated. The carbon nanotubes and diamond films on Si substrates were prepared by a conventional hot filament chemical vapour deposition. The films obtained were characterized by scanning electron microscopy and Raman spectroscopy. The field emission properties of the samples were measured in an ion-pumped vacuum chamber at a pressure of 10-6 Pa.. The experimental results showed that the field emission behaviours of carbon nanotubes/diomond films structure have greatly been improved as compared with carbon nanotubes and diamond films, respectively. A turn-on field of 1.0 V/µm and a maximum current of 500 µA at 1.5 V/µm were observed, which were lower than those of carbon nanotubes and polycrystalline diamond films, respectively. This improvement was attributed to the tip shape of sample surface, which provided an additional local increase in electric field at the tube ends.


2005 ◽  
Vol 475-479 ◽  
pp. 3595-3598
Author(s):  
Lan Zhang ◽  
Hui Zhong Ma ◽  
Xue Xiang Li ◽  
Ning Yao ◽  
Bing Lin Zhang

Carbon nitride nanotubes (CN-NT) thin films were prepared on Ni-Cr coated glass substrate by microwave plasma enhanced chemical vapor deposition at a relatively low temperature of 600~650 °C. The morphology of the films were observed by scanning electron microscopy. The microstructure of the film were analyzed by x-ray photoelectron spectroscopy, x-ray diffraction, and Raman spectroscopy. The characteristics of field emission of CN-NT thin films were measured. Experimental results indicate that the film structure and properties of the field electron emission are related to flow ratio of N2 to CH4. When the flow ratio of N2 to CH4 was 3.3, the obtained film had a better field electron emission characteristics. The turn-on field of the film was 3.7 V/µm . The current density was 413.3 µA/cm2 at an electric field of 8 V/µm.


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