Automated System for Optical Inspection of Defects in Resist-coated Non-patterned Wafer

2020 ◽  
Vol 13 (2) ◽  
pp. 93-100

Abstract: Quality control of the resist coating on a silicon wafer is one of the major tasks prior to the exposition of patterns into the resist layer. Thus, the ability to inspect and identify the physical defect in the resist layer plays an important role. The absence of any unwanted defect in resist is an ultimate requirement for preparation of precise and functional micro- or nano-patterned surfaces. Currently used wafer inspection systems are mostly utilized in semiconductor or microelectronic industry to inspect non-patterned or patterned wafers (integrated circuits, photomasks, … etc.) in order to achieve high yield production. Typically, they are based on acoustic micro-imaging, optical imaging or electron microscopy. This paper presents the design of a custom optical-based inspection device for small batch lithography production that allows scanning a wafer surface with an optical camera and by analyzing the captured images to determine the coordinates (X, Y), the size and the type of the defects in the resist layer. In addition, software responsible for driving the scanning device and for advanced image processing is presented. Keywords: Optical inspection, Resist layer, Non-patterned wafer, Quality control.

2002 ◽  
Vol 732 ◽  
Author(s):  
Shaoyu Wu ◽  
Ning Li ◽  
J. M. Kang ◽  
T. W. M. Lam ◽  
B. Lin ◽  
...  

AbstractBlack Diamond (BD) is gaining popularity as a low k dielectric for copper/low k integration. However, because of lower hardness and more hydrophobic in nature of BD film surface comparing with those of the conventional oxide, some specific defects appear during CMP process of Cu/BD patterned wafers. In this study, the patterned wafer inspection systems, AIT II, and SEM review station are used to review and to classify such defects generated from CMP process. Using conventional Cu/Oxide CMP process, the percentage of these specific defects from Cu/BD CMP is typically more than 60 of total defect count. By modifying the composition of slurry with new additives and optimization of polishing and cleaning parameters, the total defect count can be reduced by 80%, in which the amount of specific defects is less than 5% of total defect count.


Author(s):  
Nicholas Randall ◽  
Rahul Premachandran Nair

Abstract With the growing complexity of integrated circuits (IC) comes the issue of quality control during the manufacturing process. In order to avoid late realization of design flaws which could be very expensive, the characterization of the mechanical properties of the IC components needs to be carried out in a more efficient and standardized manner. The effects of changes in the manufacturing process and materials used on the functioning and reliability of the final device also need to be addressed. Initial work on accurately determining several key mechanical properties of bonding pads, solder bumps and coatings using a combination of different methods and equipment has been summarized.


animal ◽  
2021 ◽  
pp. 100293
Author(s):  
J. Simões ◽  
J.A. Abecia ◽  
A. Cannas ◽  
J.A. Delgadillo ◽  
D. Lacasta ◽  
...  

2021 ◽  
pp. 2101017
Author(s):  
Frank Mickoleit ◽  
Sabine Rosenfeldt ◽  
Mauricio Toro‐Nahuelpan ◽  
Miroslava Schaffer ◽  
Anna S. Schenk ◽  
...  

Symmetry ◽  
2021 ◽  
Vol 13 (7) ◽  
pp. 1218
Author(s):  
Aleksandr Kulchitskiy

The article proposes a solution to the problem of increasing the accuracy of determining the main shaping dimensions of axisymmetric parts through a control system that implements the optical method of spatial resolution. The influence of the projection error of a passive optical system for controlling the geometric parameters of bodies of revolution from the image of its sections, obtained by a digital camera with non-telecentric optics, on the measurement accuracy is shown. Analytical dependencies are derived that describe the features of the transmission of measuring information of a system with non-telecentric optics in order to estimate the projection error. On the basis of the obtained dependences, a method for compensating the projection error of the systems for controlling the geometry of the main shaping surfaces of bodies of revolution has been developed, which makes it possible to increase the accuracy of determining dimensions when using digital cameras with a resolution of 5 megapixels or more, equipped with short-focus lenses. The possibility of implementing the proposed technique is confirmed by the results of experimental studies.


2012 ◽  
Vol 97 (8) ◽  
pp. 3343-3353 ◽  
Author(s):  
Claudia Korneli ◽  
Rebekka Biedendieck ◽  
Florian David ◽  
Dieter Jahn ◽  
Christoph Wittmann

2021 ◽  
Author(s):  
Benjamin Schmuck ◽  
Gabriele Greco ◽  
Andreas Barth ◽  
Nicola M. Pugno ◽  
Jan Johansson ◽  
...  

1995 ◽  
Vol 387 ◽  
Author(s):  
Peter Y. Wong ◽  
Ioannis N. Miaoulis ◽  
Cynthia G. Madras

AbstractTemperature measurements and processing uniformity continue to be major issues in Rapid Thermal Processing. Spatial and temporal variations in thermal radiative properties of the wafer surface are sources of non-uniformities and dynamic variations. These effects are due to changes in spectral distribution (wafer or heat source), oxidation, epitaxy, silicidation, and other microstructural transformations. Additionally, other variations are induced by the underlying (before processing) and developing (during processing) patterns on the wafer. Numerical simulations of Co silicidation that account for these factors are conducted to determine the radiative properties, heat transfer dynamics, and resultant processing uniformity.


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