scholarly journals Suppression of Gate Oxide Degradation for MOS Devices Using Deuterium Ion Implantation Method

2012 ◽  
Vol 13 (4) ◽  
pp. 188-191 ◽  
Author(s):  
Jae-Sung Lee
Keyword(s):  
Ion Implantation ◽  
Gate Oxide ◽  
Mos Devices ◽  
Oxide Degradation ◽  
Implantation Method

Practical manufacturing technique for reducing charge-induced gate oxide degradation during ion implantation

1999 ◽  
Author(s):  
Kenneth G. Moerschel ◽  
W. A. Possanza ◽  
James Sung ◽  
M. A. Prozonic ◽  
T. Long ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Gate Oxide ◽  
Manufacturing Technique ◽  
Oxide Degradation

Two-step stress methodology for monitoring the gate oxide degradation in MOS devices

2001 ◽  
Vol 45 (8) ◽  
pp. 1317-1325 ◽  
Author(s):  
R. Rodrı́guez ◽  
E. Miranda ◽  
M. Nafrı́a ◽  
J. Suñé ◽  
X. Aymerich
Keyword(s):  
Gate Oxide ◽  
Mos Devices ◽  
Oxide Degradation

scholarly journals Charge trapping and retention behaviors of Ge nanocrystals distributed in the gate oxide near the gate synthesized by low-energy ion implantation

2007 ◽  
Vol 101 (12) ◽  
pp. 124313 ◽  
Author(s):  
M. Yang ◽  
T. P. Chen ◽  
J. I. Wong ◽  
C. Y. Ng ◽  
Y. Liu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Charge Trapping ◽  
Gate Oxide ◽  
Low Energy ◽  
Ge Nanocrystals

Gate oxide degradation of SiC MOSFET under short-circuit aging tests

2016 ◽  
Vol 64 ◽  
pp. 415-418 ◽  
Author(s):  
S. Mbarek ◽  
F. Fouquet ◽  
P. Dherbecourt ◽  
M. Masmoudi ◽  
O. Latry
Keyword(s):  
Short Circuit ◽  
Gate Oxide ◽  
Oxide Degradation ◽  
Circuit Aging
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