scholarly journals Structural and Dielectric Properties of Pb[(Zr,Sn)Ti]NbO3Thin Films Deposited by Radio Frequency Magnetron Sputtering

2010 ◽  
Vol 11 (4) ◽  
pp. 182-185 ◽  
Author(s):  
Woo-Chang Choi
Keyword(s):  
Dielectric Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering

The Interfacial Characteristics of Ba0.6Sr0.4TiO3 Films Deposited by Radio Frequency Magnetron Sputtering

2007 ◽  
Vol 336-338 ◽  
pp. 374-376
Author(s):  
Jia Xuan Liao ◽  
C.R. Yang ◽  
J.H. Zhang ◽  
H. Chen ◽  
C.L. Fu ◽  
...  
Keyword(s):  
Dielectric Properties ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Thermal Annealing ◽  
Transition Layer ◽  
Radio Frequency Magnetron ◽  
Radio Frequency Magnetron Sputtering ◽  
Si Substrates ◽  
Bst Films ◽  
Interfacial Characteristics

Ba0.6Sr0.4TiO3 (BST) thin films deposited on Pt/Ti/SiO2/Si substrates by radio frequency magnetron sputtering and crystallized by rapid thermal annealing (RTA) exhibit much thinner BST/Pt interfacial transition layer and higher dielectric properties than the films crystallized by conventional thermal annealing (CTA). HRTEM observations show that the transition layer is 2-3nm thick for RTA and 4-5nm thick for CTA. XPS investigations display that the transition layer is composed of perovskited BST phase and non-perovskited BST phase, and RTA corresponds to much less non-perovskited BST phase than CTA. The reason for non-perovskited BST phase and the dielectric properties of BST films are also presented.

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