scholarly journals Effect of Channel Length in LDMOSFET on the Switching Characteristic of CMOS Inverter

2007 ◽  
Vol 8 (1) ◽  
pp. 21-25 ◽  
Author(s):  
Zhi-Yuan Cui ◽  
Nam-Soo Kim ◽  
Hyung-Gyoo Lee ◽  
Kyoung-Won Kim
Keyword(s):  
Channel Length ◽  
Cmos Inverter ◽  
Switching Characteristic

Effect of spark channel length on switching characteristic of laser triggered gas switch

2012 ◽  
Vol 24 (4) ◽  
pp. 831-834
Author(s):  
殷毅 Yin Yi ◽  
杨杰 Yang Jie ◽  
罗皓飞 Luo Haofei ◽  
李志强 Li Zhiqiang ◽  
刘金亮 Liu Jinliang ◽  
...  
Keyword(s):  
Channel Length ◽  
Switching Characteristic ◽  
Gas Switch ◽  
Spark Channel

scholarly journals Improving Analytical Delay Modelingfor CMOS Inverters

2015 ◽  
Vol 10 (2) ◽  
pp. 123-134
Author(s):  
Felipe S. Marranghello ◽  
André I. Reis ◽  
Renato P. Ribas
Keyword(s):  
Integrated Circuits ◽  
Timing Analysis ◽  
Channel Length ◽  
Delay Model ◽  
Digital Integrated Circuits ◽  
Cmos Inverter ◽  
Worst Case ◽  
Average Value ◽  
Coupling Capacitance ◽  
Novel Approach

Analytical methods for gate delay estimation are very useful to speedup timing analysis of digital integrated circuits. This work presents a novel approach to analytically estimate the CMOS inverter delay. The proposed method considers the influence of input slope, output load and I/O coupling capacitance, as well as relevant effects such as channel length modulation and drain induced barrier lowering. Experimental results are on good agreement with HSPICE simulations, showing significant accuracy improvement compared to published related work. The delay model error has an average value of 3%, and the worst case error is smaller than 10%.

An analytical CMOS inverter delay model including channel-length modulations

1992 ◽  
Vol 27 (9) ◽  
pp. 1303-1306 ◽  
Author(s):  
Hwang-Cherng Chow ◽  
Wu-Shiung Feng
Keyword(s):  
Channel Length ◽  
Delay Model ◽  
Cmos Inverter

Joint Blind Estimation of Channel Length and Noise Variance in OFDM Systems

2011 ◽  
Vol E94-B (12) ◽  
pp. 3614-3617
Author(s):  
Bin SHENG ◽  
Pengcheng ZHU ◽  
Xiaohu YOU
Keyword(s):  
Channel Length ◽  
Blind Estimation ◽  
Ofdm Systems ◽  
Noise Variance

Reducing Roof Solar Heat Gain by Using Double-Skin Ventilated Roofs

2020 ◽  
Vol 38 (3A) ◽  
pp. 402-411
Author(s):  
Mohannad R. Ghanim ◽  
Sabah T. Ahmed
Keyword(s):  
Inclination Angle ◽  
Convection Heat Transfer ◽  
Ventilation Rate ◽  
Channel Length ◽  
Air Gap ◽  
Galvanized Steel ◽  
Heat Gain ◽  
Solar Heat ◽  
Double Skin ◽  
Solar Heat Gain

Double skin ventilated roof is one of the important passive cooling techniques to reduce solar heat gain through roofs. In this research, an experimental study was performed to investigate the thermal behaviour of a double skin roof model. The model was made of two parallel galvanized steel plates. Galvanized steel has been used in the roof construction of industrial buildings and storehouses in Iraq. The effect of inclination angle (ϴ) from the horizontal and the spacing (S) between the plates was investigated at different radiation intensities. It is found that using a double skin roof arrangement with a sufficient air gap (S) can reduce the heat gain significantly. The higher the inclination angle (ϴ) the higher the ventilation rate, the lower the heat gain through the roof. In this study, increasing the air gap from 2 cm to 4 cm reduced the heat gain significantly but when the gap was further increased to 6 cm, the reduction in the heat flux was insignificant. A dimensionless correlation was also reduced between Nusselt number () and the single parameter  where L is the channel length. This correlation can be handily utilized for designing of engineering applications dealing with high temperature difference natural convection heat transfer.

Circuit Voltage Probe Based on Time-Integrated Measurements of Optical Emission From Leakage Current

2002 ◽  
Author(s):  
Franco Stellari ◽  
Peilin Song ◽  
James C. Tsang ◽  
Moyra K. McManus ◽  
Mark B. Ketchen
Keyword(s):  
Leakage Current ◽  
Voltage Drop ◽  
Optical Emission ◽  
Channel Length ◽  
Operating Conditions ◽  
Power Circuit ◽  
Hot Carrier ◽  
Optical Inspection ◽  
Low Threshold ◽  
Circuit Power

Abstract Hot-carrier luminescence emission is used to diagnose the cause of excess quiescence current, IDDQ, in a low power circuit implemented in CMOS 7SF technology. We found by optical inspection of the chip that the high IDDQ is related to the low threshold, Vt, device process and in particular to transistors with minimum channel length (0.18 μm). In this paper we will also show that it is possible to gain knowledge regarding the operating conditions of the IC from the analysis of optical emission due to leakage current, aside from simply locating defects and failures. In particular, we will show how it is possible to calculate the voltage drop across the circuit power grid from time-integrated acquisitions of leakage luminescence.

Current-Signature-Based Analysis of Complex Test Fails

1999 ◽  
Author(s):  
Anne E. Gattiker ◽  
Phil Nigh ◽  
Wojciech Maly
Keyword(s):  
Failure Analysis ◽  
Physical Nature ◽  
Channel Length ◽  
Test Methods ◽  
Multiple Test ◽  
Physical Mechanisms ◽  
Test Behavior ◽  
Complex Test ◽  
Current Signature ◽  
Insight Into

Abstract This article provides an analysis of a class of failures observed during the SEMATECH-sponsored Test Methods Experiment. The analysis focuses on use of test-based failure analysis and IDDQ signature analysis to gain insight into the physical mechanisms underlying such subtle failures. In doing so, the analysis highlights techniques for understanding failure mechanisms using only tester data. In the experiment, multiple test methods were applied to a 0.45 micrometer effective channel length ASIC. Specifically, ICs that change test behavior from before to after burn-in are studied to understand the physical nature of the mechanism underlying their failure. Examples of the insights provided by the test-based analysis include identifying cases where there are multiple or complex defects and distinguishing cases where the defect type is likely to be a short versus an open and determining if the defect is marginal. These insights can be helpful for successful failure analysis.

A Graphical Method to Study Electrostatic Potentials of 25 nm Channel Length DG SOI MOSFETs

2018 ◽  
Vol 10 (4) ◽  
pp. 04027-1-04027-4
Author(s):  
M. Djerioui ◽  
◽  
M. Hebali ◽  
D. Chalabi ◽  
A. Saidane ◽  
...  
Keyword(s):  
Graphical Method ◽  
Channel Length ◽  
Electrostatic Potentials
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