A Combustion Pressure Sensor Utilizing Silicon Piezoresistive Effect

1993 ◽  
Author(s):  
Masaharu Takeuchi ◽  
Kouji Tsukada ◽  
Yutaka Nonomura ◽  
Yoshiteru Omura ◽  
Yoshiki Chujou
Micromachines ◽  
2021 ◽  
Vol 12 (2) ◽  
pp. 216
Author(s):  
Yongwei Li ◽  
Ting Liang ◽  
Cheng Lei ◽  
Qiang Li ◽  
Zhiqiang Li ◽  
...  

In this study, a preparation method for the high-temperature pressure sensor based on the piezoresistive effect of p-type SiC is presented. The varistor with a positive trapezoidal shape was designed and etched innovatively to improve the contact stability between the metal and SiC varistor. Additionally, the excellent ohmic contact was formed by annealing at 950 °C between Ni/Al/Ni/Au and p-type SiC with a doping concentration of 1018cm−3. The aging sensor was tested for varistors in the air of 25 °C–600 °C. The resistance value of the varistors initially decreased and then increased with the increase of temperature and reached the minimum at ~450 °C. It could be calculated that the varistors at ~100 °C exhibited the maximum temperature coefficient of resistance (TCR) of ~−0.35%/°C. The above results indicated that the sensor had a stable electrical connection in the air environment of ≤600 °C. Finally, the encapsulated sensor was subjected to pressure/depressure tests at room temperature. The test results revealed that the sensor output sensitivity was approximately 1.09 mV/V/bar, which is better than other SiC pressure sensors. This study has a great significance for the test of mechanical parameters under the extreme environment of 600 °C.


2003 ◽  
Author(s):  
Jyunji Moriwaki ◽  
Hiroyuki Murai ◽  
Akihiko Kameshima

1995 ◽  
Author(s):  
Thomas Poorman ◽  
Sergiey Kalashnikov ◽  
Marek T. Wlodarczyk ◽  
Adam Daire ◽  
Wayne Goeke ◽  
...  

2019 ◽  
Vol 33 (07) ◽  
pp. 1950040 ◽  
Author(s):  
Samridhi ◽  
Manish Kumar ◽  
Sachin Dhariwal ◽  
Kulwant Singh ◽  
P. A. Alvi

This paper reports the stress and frequency analysis of dynamic silicon diaphragm during the simulation of micro-electro-mechanical-systems (MEMS) based piezoresistive pressure sensor with the help of finite element method (FEM) within the frame work of COMSOL software. Vibrational modes of rectangular diaphragm of piezoresistive pressure sensor have been determined at different frequencies for different pressure ranges. Optimal frequency range for particular applications for any diaphragm is a very important so that MEMS sensors performance should not degrade during the dynamic environment. Therefore, for the MEMS pressure sensor having applications in dynamic environment, the diaphragm frequency of 280 KHz has been optimized for the diaphragm thickness of 50 [Formula: see text]m and hence this frequency can be considered for showing the better piezoresistive effect and high sensitivity. Moreover, the designed pressure sensor shows the high linearity and enhanced sensitivity of the order of ([Formula: see text]0.5066 mV/psi).


1995 ◽  
Author(s):  
Thomas J. Poorman ◽  
Sergey P. Kalashnikov ◽  
Marek T. Wlodarczyk

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