Application of X-Ray Measurement to Bearing Failure Analysis

1983 ◽  
Author(s):  
H. Nakashima ◽  
K. Maeda ◽  
N. Tsushima ◽  
H. Muro
Keyword(s):  
Failure Analysis ◽  
Bearing Failure ◽  
X Ray

Failure Analysis of Killer Defects and Yield Enhancement of Flat ROM Devices in Wafer Fabrication

2000 ◽  
Author(s):  
Y. N. Hua ◽  
Z. R. Guo ◽  
L. H. An ◽  
Shailesh Redkar
Keyword(s):  
Electron Microscope ◽  
Failure Analysis ◽  
Fault Isolation ◽  
Yield Enhancement ◽  
Wafer Fabrication ◽  
X Ray ◽  
Particle Contamination ◽  
Emission Microscopy ◽  
Microscopy Techniques ◽  
Scanning Electron

Abstract In this paper, some low yield cases in Flat ROM device (0.45 and 0.6 µm) were investigated. To find killer defects and particle contamination, KLA, bitmap and emission microscopy techniques were used in fault isolation. Reactive ion etching (RIE) and chemical delayering, 155 Wright Etch, BN+ Etch and scanning electron microscope (SEM) were used for identification and inspection of defects. In addition, energy-dispersive X-ray microanalysis (EDX) was used to determine the composition of the particle or contamination. During failure analysis, seven kinds of killer defects and three killer particles were found in Flat ROM devices. The possible root causes, mechanisms and elimination solutions of these killer defects/particles were also discussed.

Reballing/Rebumping Ultra-Fine Pitch Packages Less Than 0.5 mm Pitch for FA

2014 ◽  
Author(s):  
Bob Wettermann
Keyword(s):  
Solder Joint ◽  
Failure Analysis ◽  
Joint Strength ◽  
Semiconductor Devices ◽  
X Ray ◽  
Fine Pitch ◽  
Manual Methods

Abstract As the pitch and package sizes of semiconductor devices have shrunk and their complexity has increased, the manual methods by which the packages can be re-bumped or reballed for failure analysis have not kept up with this miniaturization. There are some changes in the types of reballing preforms used in these manual methods along with solder excavation techniques required for packages with pitches as fine as 0.3mm. This paper will describe the shortcomings of the previous methods, explain the newer methods and materials and demonstrate their robustness through yield, mechanical solder joint strength and x-ray analysis.

Infra-Red Reflectance Microscopy (IRRM) for Daisy Chain Flip Chip Device Failure Analysis

2004 ◽  
Author(s):  
Carlo Grilletto ◽  
Steve Hsiung ◽  
Andrew Komrowski ◽  
John Soopikian ◽  
Daniel J.D. Sullivan ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Flip Chip ◽  
State Of The Art ◽  
Failure Mechanisms ◽  
Simple Metal ◽  
X Ray ◽  
Infra Red ◽  
Cause Of Failure ◽  
Reflectance Microscopy ◽  
Ir Emission

Abstract This paper describes a method to "non-destructively" inspect the bump side of an assembled flip-chip test die. The method is used in conjunction with a simple metal-connecting "modified daisy chain" die and makes use of the fact that polished silicon is transparent to infra-red (IR) light. The paper describes the technique, scope of detection and examples of failure mechanisms successfully identified. It includes an example of a shorting anomaly that was not detectable with the state of the art X-ray equipment, but was detected by an IR emission microscope. The anomalies, in many cases, have shown to be the cause of failure. Once this has been accomplished, then a reasonable deprocessing plan can be instituted to proceed with the failure analysis.

Electronic Package Failure Analysis Using TDR

2000 ◽  
Author(s):  
Dima A. Smolyansky
Keyword(s):  
Failure Analysis ◽  
Fault Location ◽  
Measurement Accuracy ◽  
Time Domain Reflectometry ◽  
Acoustic Imaging ◽  
X Ray ◽  
Analysis Techniques ◽  
Bga Packages ◽  
Impedance Profile ◽  
Nature Of Time

Abstract The visual nature of Time Domain Reflectometry (TDR) makes it a very natural technology that can assist with fault location in BGA packages, which typically have complex interweaving layouts that make standard failure analysis techniques, such as acoustic imaging and X-ray, less effective and more difficult to utilize. This article discusses the use of TDR for package failure analysis work. It analyzes in detail the TDR impedance deconvolution algorithm as applicable to electronic packaging fault location work, focusing on the opportunities that impedance deconvolution and the resulting true impedance profile opens up for such work. The article examines the TDR measurement accuracy and the comparative package failure analysis, and presents three main considerations for package failure analysis. It also touches upon the goal and the task of the failure analysts and TDR's specific signatures for the open and short connections.

Failure analysis of rolling bearings by X-ray measurement of residual stress

Wear ◽  
1973 ◽  
Vol 25 (3) ◽  
pp. 345-356 ◽  
Author(s):  
H. Muro ◽  
N. Tsushima ◽  
K. Nunome
Keyword(s):  
Residual Stress ◽  
Failure Analysis ◽  
Rolling Bearings ◽  
X Ray

Failure Analysis of Interconnection Fault in a PoP Module Applied for Mobile Phone

2019 ◽  
Vol 2019 (1) ◽  
pp. 000254-000259
Author(s):  
Hui Xiao ◽  
Wei Li ◽  
Gaoming Shi
Keyword(s):  
Failure Analysis ◽  
Mobile Phones ◽  
Fault Location ◽  
Electron Backscattered Diffraction ◽  
X Ray ◽  
Thermal Mechanical Fatigue ◽  
Mechanical Fatigue ◽  
Grain Orientations ◽  
One Year ◽  
Client Side

Abstract A typical early fault case of some mobile phones was studied in this paper. The failure phenomenon was manifested as that the mobile phones could not be powered on after one year in their service, with the malfunction rate having reached about 2% of the whole yield in the same manufacturing lot as the fault machines returned from client side continuously. The results of fault location showed that there was interconnection failure in the main chip module, which used package on package (PoP) packaging. A series of experimental technique was used for the failure analysis, such as 3D X-ray inspection, shadow moiré test, microsectioning, scanning electron microscope (SEM), electron backscattered diffraction (EBSD) analysis, etc. The results showed that some solder joints' through cracking in the PoP module was the immediate cause of the mobile phones' malfunction, and the main reason for the cracking was thermal-mechanical fatigue with recrystallization microstructure degradation. It is important to further study on the technological method for controlling grain orientations in electronic interconnections.

Applications of 3D X-Ray Microscopy for Advanced Package Development

2011 ◽  
Vol 2011 (1) ◽  
pp. 001078-001083 ◽  
Author(s):  
K. Fahey ◽  
R. Estrada ◽  
L. Mirkarimi ◽  
R. Katkar ◽  
D. Buckminster ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Flip Chip ◽  
Development Stage ◽  
Development Effort ◽  
X Ray ◽  
Structural Details ◽  
Volumetric Images ◽  
Advanced Packaging ◽  
Solder Fatigue ◽  
Non Destructive

This paper describes the utilization of non-destructive imaging using 3D x-ray microscopy for package development and failure analysis. Four case studies are discussed to explain our methodology and its impact on our advanced packaging development effort. Identifying and locating failures embedded deep inside the package, such as a solder fatigue failure within a flip chip package, without the need for physical cross-sectioning is of substantial benefit because it preserves the package for further analysis. Also of utility is the ability to reveal the structural details of the package while producing superior quality 2D and volumetric images. The technique could be used not only for analysis of defects and failures, but also to characterize geometries and morphologies during the process and package development stage.

Failure analysis of coated galvanized steel panels

2017 ◽  
Vol 64 (4) ◽  
pp. 424-431
Author(s):  
Anwar Ul-Hamid ◽  
Huseyin Saricimen ◽  
Abdul Quddus ◽  
Luai M. Al-Hems
Keyword(s):  
Light Microscopy ◽  
Failure Analysis ◽  
Metal Sheet ◽  
Galvanized Steel ◽  
Bottom Surface ◽  
Atmospheric Conditions ◽  
Content Type ◽  
X Ray ◽  
Cause Of Failure ◽  
Steel Panels

Purpose The purpose of this paper was to determine the mode and cause of failure of polyester-coated galvanized corrugated steel sheets that exhibited degradation of the coating after seven months into service. Design/methodology/approach Visual inspection and light microscopy revealed the extent of damage exhibited by the panels. Standard metallographic techniques were used to prepare samples obtained from both unused and failed sections. Light microscopy, scanning electron microscopy combined with energy dispersive x-ray spectroscopy and x-ray diffraction techniques were used to study the surface morphology, microstructural features, elemental composition and structure of the samples. Findings The failure occurred in the form of delamination and blistering of coated layer. Presence of solar radiation, humidity and water retention resulted in loss of adhesion, leading to coating delamination and flaking especially at the top surface. The coating at the bottom surface of the panels showed evidence of blistering caused by water vapor differential that existed between the environment and the coating because of prolonged (four months) wet conditions that existed at the manufacturer’s site during storage. Practical implications It is recommended that the coated panels are stored in covered area where direct exposure to atmospheric conditions can be prevented. If open storage is unavoidable, then the use of tarpaulin or plastic sheet as covering and vapor-phase inhibitors was recommended. Originality/value This paper provides an account of failure analysis of metal sheet panels. It identifies the mode and cause of failure and also provides recommendations to avoid such occurrences in the future. The information contained in this paper is useful for plant engineers and project managers working in the metal sheet industry.

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