scholarly journals Fabrication of Silicon Carbide Quantum Dots via Chemical-Etching Approach and Fluorescent Imaging for Living Cells

2014 ◽  
Vol 05 (04) ◽  
pp. 177-182
Author(s):  
Yuepeng Song ◽  
Dongsheng Gao ◽  
Hyoung Seop Kim ◽  
Cuiqin Qu ◽  
Jie Kang ◽  
...  
2012 ◽  
Vol 1468 ◽  
Author(s):  
D. Beke ◽  
Zs. Szekrényes ◽  
I. Balogh ◽  
M. Veres ◽  
É Fazakas ◽  
...  

ABSTRACTLuminescence nanocrystals or quantum dots give grate potential for bio-analysis as well as optoelectronics. Here we report an effective and non-expensive fabrication method of silicon carbide nanocrystals, with diameter below 10 nm, based on electroless wet chemical etching. Our samples show strong violet-blue emission in the 410-450 nm region depending on the used solvents and particle size. Raman and infrared measurements suggest the varied nature of surfaces of silicon carbide nanocrystals which elucidate the behavior of the silicon carbide colloid solvents and also give opportunity to modify the surface easily for specific biological, medical or other application.


2012 ◽  
Vol 28 (1) ◽  
pp. 44-49 ◽  
Author(s):  
David Beke ◽  
Zsolt Szekrényes ◽  
István Balogh ◽  
Zsolt Czigány ◽  
Katalin Kamarás ◽  
...  

Abstract


Energies ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3492
Author(s):  
Yahia Achour ◽  
Jacek Starzyński ◽  
Jacek Rąbkowski

The paper introduces a new design of Marx generator based on modular stages using Silicon Carbide MOSFETs (SiC-MOSFET) aimed to be used in biomedical applications. In this process, living cells are treated with intense nanosecond Pulsed Electrical Field (nsPEF). The electric field dose should be controlled by adjusting the pulse parameters such as amplitude, repetition rate and pulse-width. For this purpose, the structure of the proposed generator enables negative pulses with a quasi-rectangular shape, controllable amplitude, pulse-width and repetition-rate. A complete simulation study was conducted in ANSYS-Simplorer to verify the overall performance. A compact, modular prototype of Marx generator was designed with 1.7 kV rated SiC-MOSFETs and, finally, a set of experiments confirmed all expected features.


Small ◽  
2010 ◽  
Vol 6 (19) ◽  
pp. 2109-2113 ◽  
Author(s):  
Kyungsuk Yum ◽  
Ning Wang ◽  
Min-Feng Yu

2005 ◽  
pp. 051-060 ◽  
Author(s):  
Ian D. Tomlinson ◽  
John N. Mason ◽  
Randy D. Blakely ◽  
Sandra J. Rosenthal

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