scholarly journals Al-Doping Effect on the Surface Morphology of ZnO Films Grown by Reactive RF Magnetron Sputtering

2013 ◽  
Vol 04 (12) ◽  
pp. 761-767 ◽  
Author(s):  
Erica Pereira da Silva ◽  
Michel Chaves ◽  
Gilvan Junior da Silva ◽  
Larissa Baldo de Arruda ◽  
Paulo Noronha Lisboa-Filho ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Doping Effect ◽  
Zno Films ◽  
Al Doping ◽  
Reactive Rf Magnetron Sputtering

Photoelectrochemical Properties of N-Incorporated ZnO Films Deposited by Reactive RF Magnetron Sputtering

2007 ◽  
Vol 154 (9) ◽  
pp. B956 ◽  
Author(s):  
Kwang-Soon Ahn ◽  
Yanfa Yan ◽  
Se-Hee Lee ◽  
Todd Deutsch ◽  
John Turner ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Photoelectrochemical Properties ◽  
Reactive Rf Magnetron Sputtering

Thickness dependence of microstructural evolution of ZnO films deposited by rf magnetron sputtering

1998 ◽  
Vol 13 (5) ◽  
pp. 1260-1265 ◽  
Author(s):  
Yong Eui Lee ◽  
Young Jin Kim ◽  
Hyeong Joon Kim
Keyword(s):  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Microstructural Evolution ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
Preferred Orientation ◽  
Zno Films ◽  
Orientation Change ◽  
Columnar Grains ◽  
The Relationship

The microstructural evolution, including preferred orientation and surface morphology, of ZnO films deposited by rf magnetron sputtering was investigated with increasing film thickness. Preferred orientation of the ZnO films changed from (0002) → (1011) → (1120) and fine and dense columnar grains also changed to large elongated grains with increasing thickness. Such selective texture growth was explained with an effect of highly energetic species bombardment on the growing film surface. The relationship between preferred orientation change and microstructural evolution was also discussed.

Deposition of Piezoelectric ZnO Films by RF Magnetron Sputtering and its Application to SAW Devices

2007 ◽  
Vol 1035 ◽  
Author(s):  
Seol Hee Choi ◽  
Chan Hyoung Kang
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Silicon Wafers ◽  
Center Frequency ◽  
High Resistivity ◽  
Chemical Vapor Deposition Method ◽  
Zno Films ◽  
Optimum Process ◽  
Optimum Conditions ◽  
Saw Devices

AbstractHighly c-axis oriented, dense, and fine-grained polycrystalline ZnO films with smooth surface and high resistivity were deposited on 4 inch silicon wafers by employing ZnO targets in a radio-frequency (RF) magnetron sputtering system. By changing applied RF power, substrate temperature and O2/Ar gas ratio, the optimum process parameters were found to be 150 W, 200 °C and 30/70, respectively. Applying the ZnO films deposited under these optimum conditions, surface acoustic wave (SAW) devices of ZnO/IDT/SiO2/Si structure were fabricated by conventional photolithography and etching processes. The interdigital transducers (IDT), made of the aluminum deposited by DC magnetron sputter, were patterned as 2.5/2.5 μm of finger width/spacing. Another type of SAW filter of IDT/ZnO/diamond/Si structure was fabricated. In this structure, high-quality nanocrystalline diamond (NCD) films were deposited on 4 inch silicon wafers by direct current (DC) plasma assisted chemical vapor deposition method using H2-CH4 mixture as precursor gas. On the top of the diamond films, ZnO films were deposited under the optimum conditions. The aluminum IDT pattern was fabricated on the ZnO/diamond layered films. The characteristics of the fabricated SAW devices were evaluated in terms of center frequency, insertion loss, and wave propagation velocity.

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