Photoelectrochemical Properties of N-Incorporated ZnO Films Deposited by Reactive RF Magnetron Sputtering

2007 ◽  
Vol 154 (9) ◽  
pp. B956 ◽  
Author(s):  
Kwang-Soon Ahn ◽  
Yanfa Yan ◽  
Se-Hee Lee ◽  
Todd Deutsch ◽  
John Turner ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Photoelectrochemical Properties ◽  
Reactive Rf Magnetron Sputtering

scholarly journals Al-Doping Effect on the Surface Morphology of ZnO Films Grown by Reactive RF Magnetron Sputtering

2013 ◽  
Vol 04 (12) ◽  
pp. 761-767 ◽  
Author(s):  
Erica Pereira da Silva ◽  
Michel Chaves ◽  
Gilvan Junior da Silva ◽  
Larissa Baldo de Arruda ◽  
Paulo Noronha Lisboa-Filho ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Doping Effect ◽  
Zno Films ◽  
Al Doping ◽  
Reactive Rf Magnetron Sputtering

Deposition of Piezoelectric ZnO Films by RF Magnetron Sputtering and its Application to SAW Devices

2007 ◽  
Vol 1035 ◽  
Author(s):  
Seol Hee Choi ◽  
Chan Hyoung Kang
Keyword(s):  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Silicon Wafers ◽  
Center Frequency ◽  
High Resistivity ◽  
Chemical Vapor Deposition Method ◽  
Zno Films ◽  
Optimum Process ◽  
Optimum Conditions ◽  
Saw Devices

AbstractHighly c-axis oriented, dense, and fine-grained polycrystalline ZnO films with smooth surface and high resistivity were deposited on 4 inch silicon wafers by employing ZnO targets in a radio-frequency (RF) magnetron sputtering system. By changing applied RF power, substrate temperature and O2/Ar gas ratio, the optimum process parameters were found to be 150 W, 200 °C and 30/70, respectively. Applying the ZnO films deposited under these optimum conditions, surface acoustic wave (SAW) devices of ZnO/IDT/SiO2/Si structure were fabricated by conventional photolithography and etching processes. The interdigital transducers (IDT), made of the aluminum deposited by DC magnetron sputter, were patterned as 2.5/2.5 μm of finger width/spacing. Another type of SAW filter of IDT/ZnO/diamond/Si structure was fabricated. In this structure, high-quality nanocrystalline diamond (NCD) films were deposited on 4 inch silicon wafers by direct current (DC) plasma assisted chemical vapor deposition method using H2-CH4 mixture as precursor gas. On the top of the diamond films, ZnO films were deposited under the optimum conditions. The aluminum IDT pattern was fabricated on the ZnO/diamond layered films. The characteristics of the fabricated SAW devices were evaluated in terms of center frequency, insertion loss, and wave propagation velocity.

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