scholarly journals Investigation of Inhomogeneity in Single Crystal SiC Wafers Using C-Scan Acoustic Scanning Microscopy

2020 ◽  
Vol 09 (01) ◽  
pp. 1-11 ◽  
Author(s):  
Ibrahim M. Abdel-Motaleb
Keyword(s):  
Single Crystal ◽  
Scanning Microscopy ◽  
Single Crystal Sic

Investigation of thin‐film Ni/single‐crystal SiC interface reaction

1987 ◽  
Vol 62 (9) ◽  
pp. 3747-3750 ◽  
Author(s):  
I. Ohdomari ◽  
S. Sha ◽  
H. Aochi ◽  
T. Chikyow ◽  
S. Suzuki
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Interface Reaction ◽  
Single Crystal Sic

Single Crystalline 4H-SiC MEMS Devices with N-P-N Epitaxial Structure

2014 ◽  
Vol 1693 ◽  
Author(s):  
Feng Zhao ◽  
Allen Lim ◽  
Zhibang Chen ◽  
Chih-Fang Huang
Keyword(s):  
Single Crystal ◽  
Electronic Devices ◽  
Device Fabrication ◽  
Flat Band ◽  
Harsh Environment ◽  
Mems Devices ◽  
Etching Technique ◽  
Epitaxial Structure ◽  
Single Crystal Sic ◽  
P Type

ABSTRACTIn this paper, single crystal 4H-SiC MEMS devices with n-p-n epitaxial structure was fabricated. A dopant-selective photoelectrochemical etching technique was applied to etch the sacrificial p-type SiC layer to release n-type SiC suspended structures on n-type SiC substrate. The selective etching was achieved by applying a bias which employs the different flat-band potentials of n-SiC and p-SiC in KOH solution. Such MEMS devices have the potential to fully exploit the superior properties of single crystal SiC for harsh environment operation, as well as mature epitaxial growth and device fabrication of 4H-SiC. The n-p-n structure, together with the previously reported p-n structure, extends the capability of monolithic integration between MEMS with electronic devices and circuits on SiC platform.

scholarly journals Irradiated cubic single crystal SiC as a high temperature sensor

2003 ◽  
Vol 792 ◽  
Author(s):  
Alex A. Volinsky ◽  
Lev Ginzbursky
Keyword(s):  
Single Crystal ◽  
Film Growth ◽  
Space Shuttle ◽  
Turbine Blades ◽  
Maximum Temperature ◽  
X Ray Diffraction ◽  
Ceramic Tiles ◽  
X Ray ◽  
Single Crystal Sic ◽  
Technology Modeling

ABSTRACTRadiation is known to cause point defects formation in different materials. In the case of cubic SiC single crystal radiation flux on the order of 2·1020 neutrons/cm2 at 0.18 MeV causes over 3% volume lattice expansion. Radiation-induced strain (measurable by X-Ray diffraction) can be relieved when the annealing temperature exceeds the temperature of irradiation. Based on this effect the original technology of maximum temperature measurement was developed a while ago. Single crystal SiC sensor small size (200–500 microns), wide temperature range (150–1450 °C), “no-lead” installation, and exceptional accuracy make it very attractive for use in small, rotating and “hard-to-access” parts, including, but not limited to gas turbine blades, space shuttle ceramic tiles, automobile engines, etc. With the advances in X-Ray diffraction measurements, crystal and thin film growth techniques, it is the time to revise and update this technology. Modeling radiation damage, as well as annealing effects are also beneficial.

Microscopic analysis of carbon phases induced by femtosecond laser irradiation on single-crystal SiC

2010 ◽  
Vol 100 (1) ◽  
pp. 113-117 ◽  
Author(s):  
Takuro Tomita ◽  
Tatsuya Okada ◽  
Hiroyuki Kawahara ◽  
Ryota Kumai ◽  
Shigeki Matsuo ◽  
...  
Keyword(s):  
Femtosecond Laser ◽  
Single Crystal ◽  
Laser Irradiation ◽  
Microscopic Analysis ◽  
Femtosecond Laser Irradiation ◽  
Single Crystal Sic

Study on the Machining Parameters in Polishing Single-Crystal SiC Wafers with SG Films

2013 ◽  
Vol 589-590 ◽  
pp. 457-463 ◽  
Author(s):  
Zhi Du ◽  
Jing Lu ◽  
Cong Fu Fang ◽  
Hui Huang ◽  
Xi Peng Xu
Keyword(s):  
Surface Roughness ◽  
Single Crystal ◽  
Smooth Surface ◽  
Sol Gel ◽  
Machining Parameters ◽  
Processing Quality ◽  
Rotating Speed ◽  
Single Crystal Sic ◽  
Sic Wafer ◽  
Diamond Abrasive

In this paper, diamond abrasive SG films were prepared by means of sol-gel technology for polishing single-crystal SiC wafers. The effects of machining parameters on processing quality including pressure, rotating speed and polishing time were investigated, respectively. The results indicated that the surface roughness decreased with increasing polishing time. While for pressure and rotating speed, there were inflections existing. Polishing SiC wafer under optimized machining parameters, an ultra smooth surface with the roughness of 3.7 nm could be achieved using 40 μm diamond grits.

K12 Influence on UV irradiation on to single crystal SiC. surface

2008 ◽  
Vol 2008.61 (0) ◽  
pp. 351-352
Author(s):  
Tadashi Matsumoto ◽  
Keiichi Kimura ◽  
Khajornrungruang Panart
Keyword(s):  
Single Crystal ◽  
Uv Irradiation ◽  
Single Crystal Sic

Challenges and State-of-the-Art of Oxides on SiC

2000 ◽  
Vol 640 ◽  
Author(s):  
Lori Lipkin ◽  
Mrinal Das ◽  
John Palmour
Keyword(s):  
Single Crystal ◽  
Band Gap ◽  
High Voltage ◽  
State Of The Art ◽  
Wide Band ◽  
High Current ◽  
Power Devices ◽  
Wide Band Gap ◽  
Single Crystal Sic ◽  
Lower Temperature

ABSTRACTSingle crystal SiC is a wide band-gap semiconductor with material characteristics that make it quite suitable for high voltage and high current applications. However, these devices are currently limited by their passivation. Significant improvements have been made with oxides on SiC. The most notable oxide processes are the re-oxidation anneal, a stacked ONO dielectric, and nitridation using an NO or N2O anneal. Additional improvements in lateral MOSFET mobility have been achieved using a surface channel implant, and lower temperature implant activation anneals. However, the passivation remains a significant limitation for SiC power devices.

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