Investigation of thin‐film Ni/single‐crystal SiC interface reaction

1987 ◽  
Vol 62 (9) ◽  
pp. 3747-3750 ◽  
Author(s):  
I. Ohdomari ◽  
S. Sha ◽  
H. Aochi ◽  
T. Chikyow ◽  
S. Suzuki
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Interface Reaction ◽  
Single Crystal Sic

Single-crystal SiC thin-film produced by epitaxial growth and its application to micro-mechanical devices

2008 ◽  
Vol 516 (16) ◽  
pp. 5344-5348 ◽  
Author(s):  
Nobuyuki Moronuki ◽  
Masayuki Kojima ◽  
Akira Kakuta
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Single Crystal Sic ◽  
Mechanical Devices

scholarly journals Гетероструктура SmS/SiC и термовольтаический эффект в ней

2019 ◽  
Vol 89 (2) ◽  
pp. 212
Author(s):  
В.В. Каминский ◽  
А.О. Лебедев ◽  
С.М. Соловьев ◽  
Н.В. Шаренкова
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Temperature Interval ◽  
Thermovoltaic Effect ◽  
Single Crystal Sic

AbstractA heterostructure based on single-crystal SiC and a polycrystalline SmS thin film has been studied. In the temperature interval 300–456 K, the thermovoltaic effect has been measured in the structure, the amount of which reaches ~12 mV at 456 K. It has been shown that the amount of this effect correlates with its concentration model developed earlier.

scholarly journals Synthesis of a mesoporous titania thin film with a pseudo-single-crystal framework by liquid-phase epitaxial growth, and enhancement of photocatalytic activity

RSC Advances ◽  
2020 ◽  
Vol 10 (67) ◽  
pp. 40658-40662
Author(s):  
Norihiro Suzuki ◽  
Chiaki Terashima ◽  
Kazuya Nakata ◽  
Ken-ichi Katsumata ◽  
Akira Fujishima
Keyword(s):  
Thin Film ◽  
Photocatalytic Activity ◽  
Liquid Phase ◽  
Single Crystal ◽  
Chemical Process ◽  
Anatase Phase ◽  
Mesoporous Titania ◽  
Titania Thin Film ◽  
Liquid Phase Epitaxial Growth ◽  
Pseudo Single Crystal

An anatase-phase mesoporous titania thin film with a pseudo-single-crystal framework was facilely synthesized by an inexpensive chemical process.

scholarly journals Amorphous thin-film oxide power devices operating beyond bulk single-crystal silicon limit

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuki Tsuruma ◽  
Emi Kawashima ◽  
Yoshikazu Nagasaki ◽  
Takashi Sekiya ◽  
Gaku Imamura ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Flexible Substrate ◽  
Single Crystal Silicon ◽  
Bulk Single Crystal ◽  
Next Generation ◽  
Power Devices ◽  
Large Area ◽  
Crystal Silicon ◽  
Amorphous Thin Film

AbstractPower devices (PD) are ubiquitous elements of the modern electronics industry that must satisfy the rigorous and diverse demands for robust power conversion systems that are essential for emerging technologies including Internet of Things (IoT), mobile electronics, and wearable devices. However, conventional PDs based on “bulk” and “single-crystal” semiconductors require high temperature (> 1000 °C) fabrication processing and a thick (typically a few tens to 100 μm) drift layer, thereby preventing their applications to compact devices, where PDs must be fabricated on a heat sensitive and flexible substrate. Here we report next-generation PDs based on “thin-films” of “amorphous” oxide semiconductors with the performance exceeding the silicon limit (a theoretical limit for a PD based on bulk single-crystal silicon). The breakthrough was achieved by the creation of an ideal Schottky interface without Fermi-level pinning at the interface, resulting in low specific on-resistance Ron,sp (< 1 × 10–4 Ω cm2) and high breakdown voltage VBD (~ 100 V). To demonstrate the unprecedented capability of the amorphous thin-film oxide power devices (ATOPs), we successfully fabricated a prototype on a flexible polyimide film, which is not compatible with the fabrication process of bulk single-crystal devices. The ATOP will play a central role in the development of next generation advanced technologies where devices require large area fabrication on flexible substrates and three-dimensional integration.

Atomically controlled surfaces with step and terrace of β-Ga2O3 single crystal substrates for thin film growth

2008 ◽  
Vol 254 (23) ◽  
pp. 7838-7842 ◽  
Author(s):  
Shigeo Ohira ◽  
Naoki Arai ◽  
Takayoshi Oshima ◽  
Shizuo Fujita
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Film Growth ◽  
Thin Film Growth

BaCuO/sub 2/ single crystal synthesis and its application to high Te superconductor thin film

1994 ◽  
Author(s):  
R. Miyagawa ◽  
H. Kubota ◽  
H. Kawamura ◽  
T. Fujiyoshi ◽  
M. Nagata ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Crystal Synthesis
Sign in / Sign up

Export Citation Format

Share Document