scholarly journals Structural and Surface Morphology Analysis of Copper Phthalocyanine Thin Film Prepared by Pulsed Laser Deposition and Thermal Evaporation Techniques

2016 ◽  
Vol 06 (04) ◽  
pp. 85-97 ◽  
Author(s):  
Mohammed T. Hussein ◽  
Kadhim A. Aadim ◽  
Eman K. Hassan
Keyword(s):  
Thin Film ◽  
Surface Morphology ◽  
Pulsed Laser Deposition ◽  
Thermal Evaporation ◽  
Copper Phthalocyanine ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Morphology Analysis

Crystallinity and Surface Morphology of Epitaxial (Sr,Ba)Nb2O6 Thin Film Prepared by Pulsed Laser Deposition with Two-Step Growth Sequence

1998 ◽  
Vol 541 ◽  
Author(s):  
Osamu Nakagawara ◽  
Toni Shimuta ◽  
Katsuhiko Tanaka ◽  
Yuzo Katayama
Keyword(s):  
Thin Film ◽  
Surface Morphology ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Initial Growth ◽  
Axis Orientation ◽  
Growth Sequence ◽  
Initial Stage ◽  
Step Growth

AbstractWe have prepared epitaxially grown SBN thin film with c-axis orientation by an ArF pulsed laser deposition on SrTiO3(100). Pole figures show that the SBN film has a twin structure aligned at ±18.4: with the a-axis of SrTiO3. The epitaxial relationship of SBN<310> //SrTiO3 < 100 > is determined. The lattice mismatch between SBN and SrTiO3 is approximately 0.9%, which contributes to the desirable crystallinity of the SBN thin film. Furthermore, we have tried to form the SBN film with a two-step growth sequence in order to improve surface morphology. The amorphous initial growth region of 5 monolayers (2 nm thickness) is prepared with no substrate heating followed by post-annealing treatment at 720°C and additional growth on the initially crystallized layer. RHEED patterns of the SBN film with the two-step growth sequence have remained streaky throughout the film formation, compared with spotty patterns observed from films prepared by a conventional sequence. Atomic force microscope (AFM) images show that both the initial stage and final stage have extremely flat surfaces of rms≦ lnm which is a remarkably improved figure compared with the roughness rms ≧3nm for the film deposited at 720°C from the initial stage. These results suggest that the two-step growth sequence makes it possible to improve surface morphology to a nanometer level.

Deposition of BaTi2O5 Films on Si Substrates by Using MgO Buffers

2012 ◽  
Vol 508 ◽  
pp. 189-192
Author(s):  
L. Li ◽  
Chuan Bin Wang ◽  
Qiang Shen ◽  
Lian Meng Zhang
Keyword(s):  
Thin Film ◽  
Surface Morphology ◽  
Pulsed Laser Deposition ◽  
Buffer Layer ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Axis Orientation ◽  
Si Substrates ◽  
Partial Pressures ◽  
Deposited Films

Using the (100)-Oriented MgO Thin Film as the Buffer Layer, BaTi2O5 Films Were Deposited on Si(100) Substrates by Pulsed Laser Deposition under Various Oxygen Partial Pressures (PO2). the Effects of PO2 on the Crystal Phase, Orientation and Surface Morphology of the as-Deposited Films Were Investigated. Single-Phased Bati2o5 Films Were Obtained at PO2 = 10-15 Pa, and the Preferred Orientation Changed from (710) to (020) with Decreasing PO2. at PO2 = 10 Pa, the BaTi2O5 Films with a Higher Degree of bItalic text-Axis Orientation and a Dense Texture Were Deposited on the Mgo(100)/Si(100) Substrates. The MgO Buffers Played an Important Role as Structural Templates for the Textured Growth of BaTi2O5 Films on Si Substrates.

scholarly journals Growth of Nd:potassium gadolinium tungstate thin-film waveguides by pulsed laser deposition

2000 ◽  
Vol 76 (18) ◽  
pp. 2490-2492 ◽  
Author(s):  
P. A. Atanasov ◽  
R. I. Tomov ◽  
J. Perriére ◽  
R. W. Eason ◽  
N. Vainos ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Thin Film Waveguides
Sign in / Sign up

Export Citation Format

Share Document