DBC Switch Module for Management of Temperature and Noise in 220-W/in3 Power Assembly

2014 ◽  
Vol 2014 (1) ◽  
pp. 000744-000750 ◽  
Author(s):  
Woochan Kim ◽  
Jongwon Shin ◽  
Khai D. T. Ngo
Keyword(s):  
Power Density ◽  
High Power ◽  
Temperature Rise ◽  
Junction Temperature ◽  
High Power Density ◽  
Switching Noise ◽  
Turn On ◽  
The Right ◽  
Negative Coupling ◽  
Switch Module

Achieving high power density is a challenge in the presence of stringent specifications on temperature rise and switching noise. Integration of the DBC module with PCB mother board was found to be the right approach to achieve 220-W/in3 power density, 2-kW output power, and 48.9°C junction-temperature rise. The reduced layout inductance (2.89-nH) at the source and the negative coupling between source and drain layout inductances suppressed turn-off noise. The prototyped dc-dc boost converter switched between 400 kHz to 1 MHz without self-turn-on problems and efficiency was 98.4 % by employing DBC switch module.

Direct-Bond-Copper Switch Module for Management of Temperature and Noise in 220-W/in3 Power Assembly

2014 ◽  
Vol 11 (4) ◽  
pp. 174-180 ◽  
Author(s):  
Woochan Kim ◽  
Jongwon Shin ◽  
Khai D. T. Ngo
Keyword(s):  
Power Density ◽  
Temperature Rise ◽  
Junction Temperature ◽  
High Power Density ◽  
Switching Noise ◽  
Direct Bond ◽  
The Right ◽  
Negative Coupling ◽  
Switch Module ◽  
Direct Bond Copper

Achieving high-power density is a challenge in the presence of stringent specifications on temperature rise and switching noise. Integration of the direct-bond-copper module with PCB mother board was found to be the right approach to achieve 220-W/in3 power density, 2-kW output power, and 48.9°C junction-temperature rise. The reduced layout inductance (2.89 nH) at the source and the negative coupling between source and drain layout inductances suppressed turn-off noise. The prototyped dc-dc boost converter switched between 400 kHz to 1 MHz without self-turn-on problems.

Vapor Chamber Acting as a Heat Spreader for Power Module Cooling

2009 ◽  
Vol 1 (2) ◽  
Author(s):  
Y. P. Zhang ◽  
X. L. Yu ◽  
Q. K. Feng ◽  
L. H. Zhang
Keyword(s):  
Power Density ◽  
High Power ◽  
Heat Sink ◽  
Copper Substrate ◽  
Metal Substrate ◽  
Junction Temperature ◽  
High Power Density ◽  
Vapor Chamber ◽  
Power Module ◽  
Heat Spreader

This paper presents an integrated power electronics module with a vapor chamber (VC) acting as a heat spreader to transfer the heat from the insulated gate bipolar transistor (IGBT) module to the base of the heat-sink. The novel VC integrated in a power module instead of a metal substrate is proposed. Compared with a conventional metal heat spreader, the VC significantly diffuses the concentrated heat source to a larger condensing area. The experimental results indicate that the VC based heat-sink will maintain the IGBT junction temperature 20°C cooler than a non-VC based heat-sink with high power density. The junction-to-case thermal resistance of the power module based on the VC is about 50% less than that of the power module based on a copper substrate with the same weight. The chip overshooting temperature of the copper substrate module with the same weight goes beyond 10°C against the junction temperature of the VC module at a given impulse power of 225 W. Consequently, thanks to a longer time duration to reach the same temperature, a power surge for the chip can be avoided and the ability to resist thermal impact during the VC module startup can be improved as well. The investigation shows that the VC power module is an excellent candidate for the original metal substrate, especially for an integrated power module with high power density.

Thermal Management on Hot Spot Elimination / Junction Temperature Reduction for High Power Density System in Package Structure

2007 ◽  
Author(s):  
Chan-Yen Chou ◽  
Chung-Jung Wu ◽  
Hsiu-Ping Wei ◽  
Ming-Chih Yew ◽  
Chien-Chia Chiu ◽  
...  
Keyword(s):  
Thermal Management ◽  
Power Density ◽  
High Power ◽  
Hot Spot ◽  
Junction Temperature ◽  
High Power Density ◽  
Solder Paste ◽  
Operation Temperature ◽  
Test Board ◽  
Chip Carrier

In this paper, a thermal enhanced design for a high power density system in package (SiP) is proposed to resolve the challenge faced by the packaging research community in eliminating the hot spot and reducing the junction temperature in a high operation temperature. The SiP structure includes seven sub-chips which are attached to the chip carrier. The dissipated heat is conducted to the metal slug by thermal vias, while some heat is conducted to the pads by metal traces. Finally, the whole module is connected to the test board by solder paste material. In the thermal enhanced design, a highly conductive material such as solder paste is applied to make an attachment between the chip carrier and the highest power density chip (the power amplifier chip). Besides, some thermal vias are constructed to conduct the dissipated heat from the chip carrier to the metal slug. The new structure greatly improves the thermal performance of the SiP structure. Moreover, the hot spot on the chip carrier is also eliminated in this thermal enhanced SiP structure.

Welding with high brilliance lasers and high power density

2010 ◽  
Author(s):  
Andreas Patschger ◽  
Markus Franz ◽  
Jens Bliedtner ◽  
Jean Pierre Bergmann
Keyword(s):  
Power Density ◽  
High Power ◽  
High Power Density
Sign in / Sign up

Export Citation Format

Share Document