Plasma Activated Bonding for an Enhanced Alignment Electrostatic Lens

2016 ◽  
Vol 2016 (1) ◽  
pp. 000075-000078 ◽  
Author(s):  
Elham Vakil Asadollahei ◽  
Manuel Gamero-Castaño
Keyword(s):  
Breakdown Voltage ◽  
Wafer Bonding ◽  
Fabrication Process ◽  
Aperture Size ◽  
Size Mismatch ◽  
Electrostatic Lens ◽  
Fabrication Errors ◽  
Separate Step

Abstract This article presents the design and fabrication of an electrostatic lens unit for the focusing of an electrospray beam. In our design, the post fabrication assembly is eliminated when silicon electrodes and glass spacers are permanently bonded using plasma activated wafer bonding. Minimizing fabrication errors and electrodes misalignment are essential in order to minimize geometrical aberration sources such as astigmatism. Our fabrication process allows etching each electrode in a separate step and eliminates aperture size mismatch. The glass standoffs in the lens unit provide a breakdown voltage of up to 22kV for focusing in vacuum.

Fabrication Process for Double Barrier Si-Based Quantum Well Resonant Tunneling Diodes (RTD) by UHV Wafer Bonding

2019 ◽  
Vol 16 (8) ◽  
pp. 525-530
Author(s):  
Taehun Lee ◽  
Herman Floresca ◽  
SukJune Kang ◽  
J.J. Sim ◽  
K.H. Song ◽  
...  
Keyword(s):  
Quantum Well ◽  
Wafer Bonding ◽  
Resonant Tunneling ◽  
Fabrication Process ◽  
Resonant Tunneling Diodes ◽  
Double Barrier ◽  
Tunneling Diodes

Process Variation Tolerant 4H-SiC Power Devices Utilizing Trench Structures

2013 ◽  
Vol 740-742 ◽  
pp. 809-812 ◽  
Author(s):  
Hossein Elahipanah ◽  
Arash Salemi ◽  
Benedetto Buono ◽  
Carl Mikael Zetterling ◽  
Mikael Östling
Keyword(s):  
Silicon Carbide ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Doping Concentration ◽  
Process Variation ◽  
Process Variations ◽  
Fabrication Process ◽  
Power Devices ◽  
Voltage Variation ◽  
Conventional Structure

Silicon carbide (SiC) is one of the most attractive semiconductors for high voltage applications. The breakdown voltage of SiC-based devices highly depends on the variation of the fabrication process including doping of the epilayers and the etching steps. In this paper, we show a way to diminish this variability by employing novel trench structures. The influence of the process variations in terms of doping concentration and etching has been studied and compared with conventional devices. The breakdown voltage variation (ΔVBR) of 450 V and 2100 V is obtained for the ±20% variation of doping concentration of the devices with and without the trench structures, respectively. For ±20% variation in etching steps, the maximum ΔVBR of 380 V is obtained for the device with trench structures in comparison to 1800 V for the conventional structure without trench structures. These results show that the breakdown voltage variation is significantly reduced by utilizing the proposed structure.

Resolution Attainable With the Present Day STEM

1973 ◽  
Vol 31 ◽  
pp. 230-231 ◽  
Author(s):  
J. S. Wall ◽  
J. P. Langmore ◽  
H. Isaacson ◽  
A. V. Crewe
Keyword(s):  
Spherical Aberration ◽  
Focal Length ◽  
Incident Beam ◽  
Scanning Transmission Electron Microscope ◽  
Aperture Size ◽  
Magnetic Lens ◽  
Peak Intensity ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Half Angle

The scanning transmission electron microscope (STEM) constructed by the authors employs a field emission gun and a 1.15 mm focal length magnetic lens to produce a probe on the specimen. The aperture size is chosen to allow one wavelength of spherical aberration at the edge of the objective aperture. Under these conditions the profile of the focused spot is expected to be similar to an Airy intensity distribution with the first zero at the same point but with a peak intensity 80 per cent of that which would be obtained If the lens had no aberration. This condition is attained when the half angle that the incident beam subtends at the specimen, 𝛂 = (4𝛌/Cs)¼

Development of a conical anode Fe-gun for low voltage SEM

1988 ◽  
Vol 46 ◽  
pp. 978-979
Author(s):  
T. Miyokawa ◽  
S. Norioka ◽  
S. Goto
Keyword(s):  
High Resolution ◽  
Field Emission ◽  
Low Voltage ◽  
Irradiation Damage ◽  
Cold Cathode ◽  
Virtual Source ◽  
Source Position ◽  
Electrostatic Lens ◽  
Electrostatic Lenses ◽  
Wide Range

Field emission SEMs (FE-SEMs) are becoming popular due to their high resolution needs. In the field of semiconductor product, it is demanded to use the low accelerating voltage FE-SEM to avoid the electron irradiation damage and the electron charging up on samples. However the accelerating voltage of usual SEM with FE-gun is limited until 1 kV, which is not enough small for the present demands, because the virtual source goes far from the tip in lower accelerating voltages. This virtual source position depends on the shape of the electrostatic lens. So, we investigated several types of electrostatic lenses to be applicable to the lower accelerating voltage. In the result, it is found a field emission gun with a conical anode is effectively applied for a wide range of low accelerating voltages.A field emission gun usually consists of a field emission tip (cold cathode) and the Butler type electrostatic lens.

Linewidth measurement using the low voltage SEM

1986 ◽  
Vol 44 ◽  
pp. 652-653
Author(s):  
M.G. Rosenfield
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Secondary Electron ◽  
Low Voltage ◽  
Fabrication Process ◽  
Critical Dimensions ◽  
Linewidth Measurement ◽  
Threshold Technique ◽  
Scanning Electron

Minimum feature sizes in experimental integrated circuits are approaching 0.5 μm and below. During the fabrication process it is usually necessary to be able to non-destructively measure the critical dimensions in resist and after the various process steps. This can be accomplished using the low voltage SEM. Submicron linewidth measurement is typically done by manually measuring the SEM micrographs. Since it is desirable to make as many measurements as possible in the shortest period of time, it is important that this technique be automated.Linewidth measurement using the scanning electron microscope is not well understood. The basic intent is to measure the size of a structure from the secondary electron signal generated by that structure. Thus, it is important to understand how the actual dimension of the line being measured relates to the secondary electron signal. Since different features generate different signals, the same method of relating linewidth to signal cannot be used. For example, the peak to peak method may be used to accurately measure the linewidth of an isolated resist line; but, a threshold technique may be required for an isolated space in resist.

Characteristics of Negative Lightning Impulse Breakdown Voltage in Pure Water

2018 ◽  
Vol 138 (8) ◽  
pp. 441-448 ◽  
Author(s):  
Norimitsu Takamura ◽  
Nobutaka Araoka ◽  
Seiya Kamohara ◽  
Yuta Hino ◽  
Takuya Beppu ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Pure Water ◽  
Lightning Impulse

INTEGRATED FABRICATION PROCESS FOR SOLID OXIDE FUELCELLS USING HYBRID PLASMA SPRAYING

1997 ◽  
Vol 1 (1) ◽  
pp. 41-47 ◽  
Author(s):  
Noriyuki Nomoto ◽  
Yoshitomi Okazaki ◽  
Kenji Kuroda ◽  
Shunji Takenoiri ◽  
Toyonobu Yoshida
Keyword(s):  
Plasma Spraying ◽  
Solid Oxide ◽  
Fabrication Process ◽  
Hybrid Plasma

Fundamental Considerations for CDM Failure in 90nm Products

2006 ◽  
Author(s):  
Nobuyuki Wakai ◽  
Yuji Kobira ◽  
Hidemitsu Egawa ◽  
Masayoshi Tsutsumi
Keyword(s):  
Breakdown Voltage ◽  
High Speed ◽  
Gate Oxide ◽  
Critical Parameters ◽  
Protection Device ◽  
Oxide Breakdown ◽  
Technology Products ◽  
Charged Device ◽  
Device Size ◽  
Fundamental Consideration

Abstract Fundamental consideration for CDM (Charged Device Model) breakdown was investigated with 90nm technology products and others. According to the result of failure analysis, it was found that gate oxide breakdown was critical failure mode for CDM test. High speed triggered protection device such as ggNMOS and SCR (Thyristor) is effective method to improve its CDM breakdown voltage and an improvement for evaluated products were confirmed. Technological progress which is consisted of down-scaling of protection device size and huge number of IC pins of high function package makes technology vulnerable and causes significant CDM stress. Therefore, it is expected that CDM protection designing tends to become quite difficult. In order to solve these problems in the product, fundamental evaluations were performed. Those are a measurement of discharge parameter and stress time dependence of CDM breakdown voltage. Peak intensity and rise time of discharge current as critical parameters are well correlated their package capacitance. Increasing stress time causes breakdown voltage decreasing. This mechanism is similar to that of TDDB for gate oxide breakdown. Results from experiences and considerations for future CDM reliable designing are explained in this report.

Sign in / Sign up

Export Citation Format

Share Document