Pressure-less AgNP Sintering for High-power MCM Assembly for Extreme Environment Applications

2015 ◽  
Vol 2015 (1) ◽  
pp. 000342-000348 ◽  
Author(s):  
Zhenzhen Shen ◽  
Aleksey Reiderman ◽  
Casey Anude
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Failure Mode ◽  
Printed Circuit Boards ◽  
Nano Particles ◽  
Short Exposure ◽  
Process Window ◽  
Nano Particle ◽  
Silver Nano Particle ◽  
Temperature Applications

Silver nano-particle (AgNP) sintering has been a promising bonding material for high-temperature applications. There is an increasing demand for designs implemented as multi-chip module (MCM) in the high-temperature markets, like the oil and gas industry, primarily because of MCM's smaller size, higher-performance capability, and higher overall reliability when compared to traditional high Tg printed circuit boards. In this work, pressure-less AgNP sintering paste was used in the assembly of multi-chip modules. The assemblies included die-mounted on aluminum nitride and alumina substrates that were metallized with various thin and thick films. Sintered silver nano-particle attachments were also attempted for surface-mounted technology (SMT) chip components. Different assembly parameters such as bonding line thickness and sintering profiles were evaluated to discover the optimal assembly process window that would yield acceptable reliability for 250°C and higher ambient temperature applications. The assemblies were subjected to various tests including thermal cycling, high-ramp rate thermal shocks, and high-temperature storage tests. Shear strength measurements and analysis of the cross sections and fracture surfaces were performed to understand failure mechanisms. One of the findings was a certain and unique failure mode associated with bonding of thin-film gold metallized surfaces using pressure-less silver nano-particles sintering. That failure mode begins after a short exposure to temperatures of 200°C and higher. However, silver nano-particle sintering on substrates metallized with thin-film silver and some thick-film formulations yields dramatically better results.

Nano-heat-sink thin film composite of PC/three-dimensional networked nano-fumed silica with exquisite hydrophobicity

RSC Advances ◽  
2015 ◽  
Vol 5 (6) ◽  
pp. 4376-4384 ◽  
Author(s):  
Neha Katiyar ◽  
K. Balasubramanian
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Heat Sink ◽  
Fumed Silica ◽  
Three Dimensional ◽  
Efficient Utilization ◽  
Film Composite ◽  
Thermoset Resins ◽  
Thin Film Composite ◽  
Temperature Applications

Efficient utilization of fumed silica with thermoset resins had been investigated for high temperature applications, which led to extensive exploration of newer materials.

Design issues of a thin-film p-channel SOI power MOSFET for high-temperature applications

2013 ◽  
Vol 53 (9-11) ◽  
pp. 1778-1782 ◽  
Author(s):  
Masayuki Yoshimura ◽  
Atsushi Uchida ◽  
Satoshi Matsumoto
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Design Issues ◽  
Power Mosfet ◽  
Temperature Applications

Resistors for High Temperature Applications

2019 ◽  
Vol 2019 (HiTen) ◽  
pp. 000099-000106
Author(s):  
Tom Morris
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Temperature Coefficient ◽  
Test Data ◽  
Oil And Gas ◽  
Tantalum Nitride ◽  
Passive Components ◽  
Oil And Gas Exploration ◽  
And Performance ◽  
Temperature Applications

Abstract The use and growth of high temperature electronics in a variety of applications (such as oil and gas exploration and production, automotive under the hood, aerospace and satellite/space to name a few), has necessitated a closer look at the technology used in passive components (such as resistors). A variety of resistor technologies may be suitable for high temperature applications. In the paper information, on thin film technologies (both nichrome and tantalum nitride thin film information is presented), thick film, and wire-wound construction is presented, with discussions regarding their respective characteristics that make them more or less suitable for high temperature and other excessive environments. This paper presents information on resistor construction details, material information and manufacturing processing, along with test data and performance summaries under short and long term high temperature conditions. Additionally, other pertinent test data through typical environmental tests is presented Although resistors and other passive components are often taken for granted, high temperature applications can tax the performance of many resistor types. The proper selection of resistive components will insure that the stability, temperature coefficient (and temperature coefficient tracking for resistor networks), and reliability is maintained to insure reliable circuit performance.

The performance over the frequency range 140GHz–220GHz of thick-film CPW lines fabricated from nano-particle silver

2010 ◽  
Vol 2010 (1) ◽  
pp. 000533-000536
Author(s):  
A. Alshehri ◽  
M. Horaczek ◽  
D. Rudka ◽  
R.J. Leigh ◽  
M. Jakubowska ◽  
...  
Keyword(s):  
Coplanar Waveguide ◽  
Nano Particles ◽  
Nano Particle ◽  
Frequency Range ◽  
Silver Ink ◽  
University Of Technology ◽  
Wafer Probing ◽  
The University ◽  
High Bulk ◽  
Silver Nano Particle

Coplanar waveguide lines fabricated using thick-films of pure silver paste (Ag) and also pastes containing silver nano-particles (nAg) were measured in the high frequency range 110GHz–220GHz. Suitable feed lines and pads were designed and fabricated using photoimageable silver ink, to allow measurements to be performed using a wafer-probing station with 75μm pitch CPW probes. Silver nano-particle materials have a particular benefit in the higher frequency ranges due to the high bulk conductivity, resulting in lower bulk loss. Different lengths of CPW lines were fabricated, to allow subtraction of the mismatches between the feeding pads and the coplanar lines under test. The CPW lines were fabricated on various alumina substrates, with purities of 96%. The pastes were prepared at Warsaw University of Technology (Poland), and tested at the University of Surrey (UK).

Growth Behaviour and Electrical Resistivity Relationship of Silver Nanoparticle Thin Film

2012 ◽  
Vol 622-623 ◽  
pp. 801-805
Author(s):  
Kankan Prosad Mandal ◽  
Yong Taeg Oh
Keyword(s):  
Thin Film ◽  
Grain Growth ◽  
Spin Coating ◽  
Characteristic Property ◽  
Nano Particle ◽  
Growth Behaviour ◽  
Critical Transition Temperature ◽  
Silver Thin Film ◽  
Relationship Of ◽  
Silver Nano Particle

Normal grain growth of silver thin film predominates above the critical transition temperature below which bimodal grain growth predominates. In this experiment silver Nano layers were prepared by spin coating on glass substrate and which were annealed at different temperature. The lowest attainable resistance was 1.23 Ohm/sq. The woulf plot of fcc silver suggests that during growth (111) family plane predominated on surface of every grain and that was true according to SEM figure. This is the reason for low resistivity of silver thin film. Not only on surface but also this stable (111) plane was present on grain boundary as singular interface. However, ADF Simulation has been done to construct 40 nm silver nano particle and to construct band structure of silver. The valance band and conduction band overlap shows the metallic characteristic property of silver.

Sign in / Sign up

Export Citation Format

Share Document