Addressing Flux Dip Challenges for 3-D Integrated Large Die, Ultrafine Pitch Interconnect

2017 ◽  
Vol 14 (1) ◽  
pp. 32-38
Author(s):  
C. Marsan-Loyer ◽  
D. Danovitch ◽  
N. Boyer
Keyword(s):  
Integrated Circuits ◽  
Semiconductor Industry ◽  
Chemical Characterization ◽  
Dip Coating ◽  
Production Type ◽  
Fine Pitch ◽  
Technical Issues ◽  
Cost Penalty ◽  
Physical And Chemical ◽  
Process Compatibility

The requirement for closely coupled, highly integrated circuits in the semiconductor industry has spawned alternative packaging innovations such as 2.5-D/3-D integration. The incredible potential of this alternative comes with great challenges, not the least of which is the unprecedented reduction in package interconnection pitch. Market acceptance of new fine-pitch microelectronic products is strongly dependent on the development of flawless assembly processes that align with the traditional Moore-like expectation of higher performance without cost penalty. One such process is the application of flux to the interconnect surfaces to achieve effective joining. Insufficient flux quantity or flux activity can impede the formation of solid, reliable joints, whereas excessive quantities or activity can cause solder bridging or difficulties with downstream operations such as residue cleaning or underfill reinforcement. This delicate balance, already complex for traditional chip joining, is further challenged by the geometrical and spatial reductions imposed by pitch miniaturization, especially where large die, with over 100,000 interconnects, are concerned. This article presents an overall development protocol to evolving a flux dipping operation to production-level thermocompression assembly of large die (8 × 11 × 0.780 mm) with 11,343 ultrafine pitch (62 μm) copper pillar interconnections. After reviewing the state of the art for fluxing technology and detailing the specific technical issues, we present and defend the chosen flux application approach with its corresponding parameters of interest. Physical and chemical characterization results for selected flux material candidates are reported in conjunction with an analysis of how their properties correlate to the flux dip application parameters. As part of this fundamental understanding, we investigate and report on flux dip coating behavior and how it compares to other industrial dip coating applications. Finally, the results of process assembly experiments in a production-type environment are reviewed and discussed with respect to the previous characterizations. These experiments span downstream assembly process compatibility (i.e., cleaning and underfill) as well as product reliability.

Addressing Flux Dip Challenges for 3D Integrated Large Die, Ultra-fine Pitch Interconnect

2016 ◽  
Vol 2016 (1) ◽  
pp. 000054-000059
Author(s):  
C. Marsan-Loyer ◽  
D. Danovitch ◽  
N. Boyer
Keyword(s):  
Integrated Circuits ◽  
Semiconductor Industry ◽  
Chemical Characterization ◽  
Dip Coating ◽  
Production Type ◽  
Fine Pitch ◽  
Technical Issues ◽  
Cost Penalty ◽  
Physical And Chemical ◽  
Process Compatibility

Abstract The requirement for closely coupled, highly integrated circuits in the semiconductor industry has spawned alternative packaging innovations such as 2.5D/3D integration. The incredible potential of this alternative comes with great challenges, not the least of which is the unprecedented reduction in package interconnection pitch. Market acceptance of new fine-pitch microelectronic products is strongly dependent upon the development of flawless assembly processes that align with the traditional Moore-like expectation of higher performance without cost penalty. One such process is the application of flux to the interconnect surfaces in order to achieve effective joining. Insufficient flux quantity or flux activity can impede the formation of solid, reliable joints, while excessive quantities or activity can cause solder bridging or difficulties with downstream operations such as residue cleaning or underfill reinforcement. This delicate balance, already complex for traditional chip joining, is further challenged by the geometrical and spatial reductions imposed by pitch miniaturization, especially where large die, with over 100,000 interconnects, are concerned. This paper presents an overall development protocol to evolving a flux dipping operation to production-level thermocompression assembly of large die with ultra-fine pitch (60 μm) copper pillar interconnections. After reviewing the state of the art for fluxing technology and detailing the specific technical issues, we present and defend the chosen flux application approach with its corresponding parameters of interest. Physical and chemical characterization results for selected flux material candidates are reported in conjunction with an analysis of how their properties correlate to the flux dip application parameters. As part of this fundamental understanding, we investigate and report on flux dip coating behaviour and how it compares to other industrial dip coating applications. Finally, the results of process assembly experiments in a production-type environment are reviewed and discussed with respect to the previous characterizations. These experiments span downstream assembly process compatibility (i.e. cleaning and underfill) as well as product reliability.

Pre-Applied Inter Chip Fill for 3D-IC Chip Joining

2015 ◽  
Author(s):  
Yasuhiro Kawase ◽  
Makoto Ikemoto ◽  
Masaya Sugiyama ◽  
Hidehiro Yamamoto ◽  
Hideki Kiritani
Keyword(s):  
Thermal Conductivity ◽  
Integrated Circuits ◽  
High Performance ◽  
Three Dimensional ◽  
Conductive Filler ◽  
3D Ic ◽  
Fine Pitch ◽  
Silica Filler ◽  
Conductive Fillers ◽  
Process Compatibility

Three dimensional integrated circuits (3D-IC) have been proposed for the purpose of low power and high performance in recent years. Pre-applied inter chip fill is required for fine pitch interconnections, large chips, and also thin chips. In addition to them, pre-applied joining process with high thermal conductive inter chip fill (HT-ICF) is strongly required for the cooling of 3D-IC. Some kinds of matrix resins and thermal conductive fillers were simulated and evaluated for pre-applied ICF. As a result, matrix and cure agent appeared to be important to both pre-applied ICF process compatibility and thermal conductivity, so that we’d selected epoxy type matrix based on controlling super molecular structure due to its mesogen unit. And not only matrix but also filler appeared to be the key to improve thermal conductivity for pre-applied ICF at the same time. The thermal conductivity of conventional silica filler was only 1W/mK, so that, taking into account of thermal conductivity, density and its stability, we’d selected aluminum oxide and boron nitride as thermal conductive filler and optimized HT-ICF for pre-applied process. After composite was mixed and cured, some physical properties were measured and thermal conductivity was 1.8W/mK, CTE was below 21ppm/K and Tg was 120°C. Furthermore, new high thermal conductive filler was also studied. We’d synthesized completely new spherical BN (diameter <5um) and applied it to HT-ICF and the thermal conductivity was almost two times higher than conventional BN. In this study, we confirmed ICF physical characteristics and its pre-applied joining for 3D-IC and void-less joining was also discussed.

ViTaL: Verifying Trojan-Free Physical Layouts through Hardware Reverse Engineering

2021 ◽  
Author(s):  
Matthias Ludwig ◽  
Ann-Christin Bette ◽  
Bernhard Lippmann
Keyword(s):  
Integrated Circuits ◽  
Reverse Engineering ◽  
Semiconductor Industry ◽  
Statistical Validation ◽  
User Input ◽  
Detection Techniques ◽  
Fine Pitch ◽  
Layout Verification ◽  
First Time ◽  
Physical Layout

The semiconductor industry is heavily relying on outsourcing of design, fabrication, and testing to third parties. The threat of possibly malicious actors in this ramified supply-chain poses a risk for the integrity of integrated circuits (ICs) and hardware Trojans (HTs) are a heavily discussed topic in academia and the industry. A variety of pre- and post-silicon HT prevention and detection techniques has been suggested in prior works. Hardware reverse engineering has the potential to detect potential modification in physical layouts. Yet, there is no model to qualitatively and quantitatively rate the complex and expensive reverse engineering (RE) process addressing its inherent process aberrations and consequently provide a tool for layout verification. The ViTaL framework introduces a statistical validation technique, based on physical layout verification through RE and considers all potential sources of errors. The golden-model based framework is technology-agnostic, scaleable, and user input is optional. For the first time, results of fine pitch metallization layers of a CMOS 40nm process node IC are presented quantitatively and the limitations and possibilities are discussed.<br>

scholarly journals ViTaL: Verifying Trojan-Free Physical Layouts through Hardware Reverse Engineering

2021 ◽  
Author(s):  
Matthias Ludwig ◽  
Ann-Christin Bette ◽  
Bernhard Lippmann
Keyword(s):  
Integrated Circuits ◽  
Reverse Engineering ◽  
Semiconductor Industry ◽  
Statistical Validation ◽  
User Input ◽  
Detection Techniques ◽  
Fine Pitch ◽  
Layout Verification ◽  
First Time ◽  
Physical Layout

The semiconductor industry is heavily relying on outsourcing of design, fabrication, and testing to third parties. The threat of possibly malicious actors in this ramified supply-chain poses a risk for the integrity of integrated circuits (ICs) and hardware Trojans (HTs) are a heavily discussed topic in academia and the industry. A variety of pre- and post-silicon HT prevention and detection techniques has been suggested in prior works. Hardware reverse engineering has the potential to detect potential modification in physical layouts. Yet, there is no model to qualitatively and quantitatively rate the complex and expensive reverse engineering (RE) process addressing its inherent process aberrations and consequently provide a tool for layout verification. The ViTaL framework introduces a statistical validation technique, based on physical layout verification through RE and considers all potential sources of errors. The golden-model based framework is technology-agnostic, scaleable, and user input is optional. For the first time, results of fine pitch metallization layers of a CMOS 40nm process node IC are presented quantitatively and the limitations and possibilities are discussed.<br>

Antibacterial and Anti-Biofilm Biosynthesised Silver and Gold Nanoparticles for Medical Applications: Mechanism of Action, Toxicity and Current Status

2020 ◽  
Vol 17 (2) ◽  
pp. 88-100 ◽  
Author(s):  
Sundos Suleman Ismail Abdalla ◽  
Haliza Katas ◽  
Fazren Azmi ◽  
Mohd Fauzi Mh Busra
Keyword(s):  
Gold Nanoparticles ◽  
Synthesis Method ◽  
Chemical Characterization ◽  
Current Status ◽  
Silver And Gold Nanoparticles ◽  
Physical And Chemical Characterization ◽  
Biosynthesized Agnps ◽  
Physical And Chemical ◽  
Insight Into ◽  
Bio Synthesis

Fast progress in nanoscience and nanotechnology has contributed to the way in which people diagnose, combat, and overcome various diseases differently from the conventional methods. Metal nanoparticles, mainly silver and gold nanoparticles (AgNPs and AuNPs, respectively), are currently developed for many applications in the medical and pharmaceutical area including as antibacterial, antibiofilm as well as anti-leshmanial agents, drug delivery systems, diagnostics tools, as well as being included in personal care products and cosmetics. In this review, the preparation of AgNPs and AuNPs using different methods is discussed, particularly the green or bio- synthesis method as well as common methods used for their physical and chemical characterization. In addition, the mechanisms of the antimicrobial and anti-biofilm activity of AgNPs and AuNPs are discussed, along with the toxicity of both nanoparticles. The review will provide insight into the potential of biosynthesized AgNPs and AuNPs as antimicrobial nanomaterial agents for future use.

scholarly journals Physical and Chemical Characterization of an Oyster Hemagglutinin

1969 ◽  
Vol 244 (15) ◽  
pp. 4128-4135
Author(s):  
R T Acton ◽  
J C Bennett ◽  
E E Evans ◽  
R E Schrohenloher
Keyword(s):  
Chemical Characterization ◽  
Physical And Chemical Characterization ◽  
Physical And Chemical

Miscible blend polyethersulfone/polyimide asymmetric membrane crosslinked with 1,3-diaminopropane for hydrogen separation

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Nur’ Adilah Abdul Nasir ◽  
Ameen Gabr Ahmed Alshaghdari ◽  
Mohd Usman Mohd Junaidi ◽  
Nur Awanis Hashim ◽  
Mohamad Fairus Rabuni ◽  
...  
Keyword(s):  
Separation Efficiency ◽  
Chemical Characterization ◽  
Gas Permeation ◽  
Separation Performance ◽  
Membrane Composition ◽  
Asymmetric Membrane ◽  
Wet Phase Inversion ◽  
Pair Performance ◽  
Improved Performance ◽  
Physical And Chemical

Abstract Efficient purification technology is crucial to fully utilize hydrogen (H2) as the next generation fuel source. Polyimide (PI) membranes have been intensively applied for H2 purification but its current separation performance of neat PI membranes is insufficient to fulfill industrial demand. This study employs blending and crosslinking modification simultaneously to enhance the separation efficiency of a membrane. Polyethersulfone (PES) and Co-PI (P84) blend asymmetric membranes have been prepared via dry–wet phase inversion with three different ratios. Pure H2 and carbon dioxide (CO2) gas permeation are conducted on the polymer blends to find the best formulation for membrane composition for effective H2 purification. Next, the membrane with the best blending ratio is chemically modified using 1,3-diaminopropane (PDA) with variable reaction time. Physical and chemical characterization of all membranes was evaluated using field emission scanning electron microscope (FESEM), X-ray diffraction (XRD), and Fourier transform infrared (FTIR). Upon 15 min modification, the polymer membrane achieved an improvement on H2/CO2 selectivity by 88.9%. Moreover, similar membrane has demonstrated the best performance as it has surpassed Robeson’s upper bound curve for H2/CO2 gas pair performance. Therefore, this finding is significant towards the development of H2-selective membranes with improved performance.

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