ZoneBOND Thin Wafer Support Process for Wafer Bonding Applications

2010 ◽  
Vol 7 (3) ◽  
pp. 138-142 ◽  
Author(s):  
Jeremy McCutcheon ◽  
Robert Brown ◽  
JoElle Dachsteiner
Keyword(s):  
Wafer Bonding ◽  
Room Temperature ◽  
Bonding Process ◽  
Temporary Bonding ◽  
Higher Temperature

The ZoneBOND process has been developed as an alternative temporary bonding process that bonds at an acceptable temperature (usually less than 200°C), survives through higher-temperature processes, and then debonds at room temperature. The technology utilizes standard silicon or glass carriers and current thermoplastic adhesives developed by Brewer Science, Inc.

Integrated GaAs Diode Technology for Millimeter and Submillimeter-wave Components and Systems

2000 ◽  
Vol 631 ◽  
Author(s):  
Thomas W. Crowe ◽  
Jeffrey L. Hesler ◽  
William L. Bishop ◽  
Willie E. Bowen ◽  
Richard F. Bradley ◽  
...  
Keyword(s):  
Wafer Bonding ◽  
Room Temperature ◽  
Flip Chip ◽  
Quartz Substrate ◽  
Submillimeter Wave ◽  
Bonding Process ◽  
Circuit Performance ◽  
Embedding Impedance ◽  
Compact Range ◽  
The Cost

ABSTRACTGaAs Schottky barrier diodes remain a workhorse technology for submillimeter-wave applications including radio astronomy, chemical spectroscopy, atmospheric studies, plasma diagnostics and compact range radar. This is because of the inherent speed of these devices and their ability to operate at room temperature. Although planar (flip-chip and beam-lead) diodes are replacing whisker contacted diodes throughout this frequency range, the handling and placement of such small GaAs chips limits performance and greatly increases component costs. Through the use of a novel wafer bonding process we have fabricated and tested submillimeter-wave components where the GaAs diode is integrated on a quartz substrate along with other circuit elements such as filters, probes and bias lines. This not only eliminates the cost of handling microscopically small chips, but also improves circuit performance. This is because the parasitic capacitance is reduced by the elimination of the GaAs substrate and the electrical embedding impedance seen by the diodes is more precisely controlled. Our wafer bonding process has been demonstrated through the fabrication and testing of a fundamental mixer at 585 GHz (Tmix < 1200K) and a 380 GHz subharmonically pumped mixer (Tmix < 1000K). This paper reviews the wafer bonding process and discusses how it can be used to greatly improve the performance and manufacturability of submillimeter-wave components.

ZoneBOND™ Thin Wafer Support Process for Wafer Bonding Applications

2010 ◽  
Vol 2010 (DPC) ◽  
pp. 001080-001094 ◽  
Author(s):  
Jeremy McCutcheon ◽  
Robert Brown ◽  
JoElle Dachsteiner
Keyword(s):  
Integrated Circuits ◽  
Wafer Bonding ◽  
Integrated Circuit ◽  
Room Temperature ◽  
Adhesive Bonding ◽  
Temperature Stability ◽  
Optoelectronic Device ◽  
Mems Devices ◽  
Thermal Compression ◽  
Temporary Bonding

Wafer-to-wafer bonding is widely used to support both the production of integrated circuits and MEMS devices. Bonding may be accomplished in a variety of ways including anodic, thermal compression, and adhesive bonding. The bond may be either permanent or temporary. Permanent wafer bonding is used to combine two materials together that remain together for the life of the device, for example, in the production of Si/GaAs wafer heterostructures for integration of an optoelectronic device into silicon integrated circuit technology. Temporary bonding is used to support the device wafer during certain processing steps, and then removed once the device wafer is completed. Currently, there are several temporary bonding processes being developed in industry. The leading technology utilizes some form of polymeric material to temporarily fasten or bond a rigid backing material, usually silicon or glass, to the device wafer for processing. The main issues associated with these techniques are temperature stability of the adhesive, removal from the support wafer, and cleaning the adhesive from the device wafer. The ideal process would require bonding at an acceptable temperature (usually less than 200°C), surviving through higher temperature processes, followed by debonding at lower temperature or even room temperature. In this paper, an alternative solution is reported that utilizes current thermoplastic adhesives and silicon support wafers coupled with a patented technology, developed by Brewer Science, Inc. Support wafers are bonded to device wafers at acceptable temperatures, mechanical integrity is maintained through semiconductor or MEMs processing, and the completely processed device wafer is then safely debonded from the support wafer at room temperature.

Application of Low Temperature InP Wafer Bonding Towards Optical Add/Drop Multiplexer Realization

2004 ◽  
Vol 829 ◽  
Author(s):  
J. Arokiaraj ◽  
S. Vicknesh ◽  
A. Ramam
Keyword(s):  
Indium Phosphide ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Amorphous Layer ◽  
Cross Sectional ◽  
Current Voltage ◽  
High Resolution Tem ◽  
Higher Temperature ◽  
Current Voltage Characteristics ◽  
Bonding Method

AbstractA method to bond directly Indium Phosphide to Indium phosphide at low temperatures has been realized. The treatment of wafers in HF and oxygen plasma exposure prior to bonding is helpful in activating the surface of the wafers at room temperature. This surface activation is useful to bond the wafers at room temperature. Further higher temperature (220°C) treatment with pressure, aided in the completion of the wafer bonding process. The interface of the bonded structures revealed a very thin amorphous layer of oxide when examined under high resolution TEM. Cross-sectional micro Raman measurements revealed signatures corresponding to some disordered associated layer at the interface. Current-Voltage characteristics exhibited ohmic conduction across the interface. The wafer bonding method developed would serve as a useful tool for the fabrication of photonic and optoelectronic devices.

Advanced Thin Wafer Support Processes for Temporary Wafer Bonding

2010 ◽  
Vol 2010 (1) ◽  
pp. 000361-000363 ◽  
Author(s):  
Jeremy McCutcheon ◽  
Dongshun Bai
Keyword(s):  
Wafer Bonding ◽  
Room Temperature ◽  
Outer Zone ◽  
Separation Process ◽  
Carrier Wafer ◽  
Higher Temperature ◽  
Three Components

The ZoneBOND™ process has been developed to allow temporary wafer bonding at acceptable temperatures (usually less than 200°C), survival through higher-temperature processes, and then demounting at room temperature. The technology utilizes standard silicon or glass carriers and current thermoplastic adhesives developed by Brewer Science, Inc. The separation process consists of three components: removal of the adhesive in the outer zone, lamination of the device side of the pair, and separation of the carrier wafer from the adhesive. Developments of these key areas are the focus of this paper.

(ECS Meeting PRiME 2020) High TEC copper to connect copper bond pads for low temperature wafer bonding

2020 ◽  
Author(s):  
Anh Van Nhat Tran ◽  
Kazuo Kondo ◽  
Tetsuji Hirato
Keyword(s):  
Wafer Bonding ◽  
Room Temperature ◽  
Three Dimensional ◽  
Copper Surface ◽  
Bonding Process ◽  
3D Integration ◽  
High Thermal Expansion ◽  
Lower Temperature ◽  
Bond Pads ◽  
High Thermal Expansion Coefficient

Copper to copper wafer hybrid bonding is the most promising technology for three-dimensional (3D) integration. In the hybrid bonding process, two silicon wafers are aligned and contacted. At room temperature, these aligned copper pads contain radial-shaped nanometer-sized hollows due to the dishing effect induced by chemical-mechanical polishing (CMP). These wafers are annealed for copper to expand and connect upper and lower pads. This copper expansion is key to eliminate the radial-shaped hollows and make copper pads contacted. Therefore, in this research, we investigated the new high thermal expansion coefficient (TEC) electrodeposited copper to eliminate dishing hollows at lower temperature than that with conventional copper using the combination of new additive A and three other additives. The TEC of new electrodeposited copper is 25.2 x 10-6 oC-1, 46% higher than conventional copper and the calculated contact area of copper surface at 250oC with 5 nm dishing depth is 100%.

On the Chemistry of Tetrabenzyl Thiuram Disulfide and Tetramethyl Thiuram Disulfide with Bis (Triethoxysilylpropyl) Tetrasulfide in Silica Compounds

2003 ◽  
Vol 76 (4) ◽  
pp. 876-891 ◽  
Author(s):  
R. N. Datta ◽  
A. G. Talma ◽  
S. Datta ◽  
P. G. J. Nieuwenhuis ◽  
W. J. Nijenhuis ◽  
...  
Keyword(s):  
High Performance ◽  
Room Temperature ◽  
Succinic Anhydride ◽  
Dynamic Properties ◽  
The Other ◽  
Resonance Spectroscopy ◽  
Reaction Products ◽  
Negative Effect ◽  
Higher Temperature ◽  
Analytical Tools

Abstract The use of thiurams such as Tetramethyl thiuram disulfide (TMTD) or Tetrabenzyl thiuram disulfide (TBzTD) has been explored to achieve higher cure efficiency. The studies suggest that a clear difference exists between the effect of TMTD versus TBzTD. TMTD reacts with Bis (triethoxysilylpropyl) tetrasulfide (TESPT) and this reaction can take place even at room temperature. On the other hand, the reaction of TBzTD with TESPT is slow and takes place only at higher temperature. High Performance Liquid Chromatography (HPLC) with mass (MS) detection, Nuclear Magnetic Resonance Spectroscopy (NMR) and other analytical tools have been used to understand the differences between the reaction of TMTD and TESPT versus TBzTD and TESPT. The reaction products originating from these reactions are also identified. These studies indicate that unlike TMTD, TBzTD improves the cure efficiency allowing faster cure without significant effect on processing characteristics as well as dynamic properties. The loading of TESPT is reduced in a typical Green tire compound and the negative effect on viscosity is repaired by addition of anhydrides, such as succinic anhydride, maleic anhydride, etc.

Room-Temperature Wafer Bonded Multi-Junction Solar Cell Grown by Solid State Molecular Beam Epitaxy

MRS Advances ◽  
2016 ◽  
Vol 1 (43) ◽  
pp. 2907-2916 ◽  
Author(s):  
Shulong Lu ◽  
Shiro Uchida
Keyword(s):  
Solar Cell ◽  
Molecular Beam Epitaxy ◽  
Wafer Bonding ◽  
Room Temperature ◽  
Molecular Beam ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Device Structure ◽  
Junction Solar Cell

ABSTRACTWe studied the InGaP/GaAs//InGaAsP/InGaAs four-junction solar cells grown by molecular beam epitaxy (MBE), which were fabricated by the novel wafer bonding. In order to reach a higher conversion efficiency at highly concentrated illumination, heat generation should be minimized. We have improved the device structure to reduce the thermal and electrical resistances. Especially, the bond resistance was reduced to be the lowest value of 2.5 × 10-5 Ohm cm2 ever reported for a GaAs/InP wafer bond, which was obtained by the specific combination of p+-GaAs/n-InP bonding and by using room-temperature wafer bonding. Furthermore, in order to increase the short circuit current density (Jsc) of 4-junction solar cell, we have developed the quality of InGaAsP material by increasing the growth temperature from 490 °C to 510 °C, which leads to a current matching. In a result, an efficiency of 42 % at 230 suns of the four-junction solar cell fabricated by room-temperature wafer bonding was achieved.

Thermal Resistance of Fly Ash Geopolymers with Alumina as Additive

2018 ◽  
Vol 281 ◽  
pp. 182-188
Author(s):  
Yong Sing Ng ◽  
Yun Ming Liew ◽  
Cheng Yong Heah ◽  
Mohd Mustafa Al Bakri Abdullah ◽  
Kamarudin Hussin
Keyword(s):  
Elevated Temperature ◽  
Fly Ash ◽  
Thermal Resistance ◽  
Sodium Hydroxide ◽  
Sodium Silicate ◽  
Room Temperature ◽  
Strength Degradation ◽  
Alumina Addition ◽  
Higher Temperature ◽  
Temperature Exposure

The present work investigates the effect of alumina addition on the thermal resistance of fly ash geopolymers. Fly ash geopolymers were synthesised by mixing fly ash with activator solution (A mixture of 12M sodium hydroxide and sodium silicate) at fly ash/activator ratio of 2.5 and sodium silicate/sodium hydroxide ratio of 2.5. The alumina (0, 2 and 4 wt %) was added as an additive. The geopolymers were cured at room temperature for 24 hours and 60°C for another 24 hours. After 28 days, the geopolymers was heated to elevated temperature (200 - 1000°C). For unexposed geopolymers, the addition of 2 wt % of alumina increased the compressive strength of fly ash geopolymers while the strength decreased when the content increased to 4 wt.%. The temperature-exposed geopolymers showed enhancement of strength at 200°C regardless of the alumina content. The strength reduced at higher temperature exposure (> 200°C). Despite the strength degradation at elevated temperature, the strength attained was relatively high in the range of 13 - 45 MPa up to 1000°C which adequately for application as structural materials.

Newly Developed Heat Resistant Magnesium Alloy by Thixomolding®

2005 ◽  
Vol 488-489 ◽  
pp. 287-290 ◽  
Author(s):  
Tadayoshi Tsukeda ◽  
Ken Saito ◽  
Mayumi Suzuki ◽  
Junichi Koike ◽  
Kouichi Maruyama
Keyword(s):  
Aluminum Alloy ◽  
Magnesium Alloy ◽  
Magnesium Alloys ◽  
Room Temperature ◽  
Elevated Temperatures ◽  
Die Casting ◽  
The Other ◽  
Heat Resistant ◽  
Higher Temperature ◽  
Better Than

We compared the newly developed heat resistant magnesium alloy with conventional ones by Thixomolding® and aluminum alloy by die casting. Tensile properties at elevated temperatures of AXEJ6310 were equal to those of ADC12. In particular, elongation tendency of AXEJ6310 at higher temperature was better than those of the other alloys. Creep resistance of AXEJ6310 was larger than that of AE42 by almost 3 orders and smaller than that of ADC12 by almost 2 orders of magnitude. Fatigue limits at room temperature and 423K of AXEJ6310 was superior among conventional magnesium alloys.

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