High Temperature 256Kbit (32Kbit × 8) HTEEPROM Reliability Testing

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000105-000115
Author(s):  
Joe G. Guimont ◽  
Bruce W. Ohme
Keyword(s):  
High Temperature ◽  
Gas Analysis ◽  
Silicon On Insulator ◽  
Reliability Test ◽  
Cmos Process ◽  
Control Input ◽  
Test Results ◽  
Data Retention ◽  
Parallel Memory ◽  
Non Volatile Memory

Results of reliability and qualification testing are presented for a commercial High Temperature EEPROM (HTEEPROM). This HTEEPROM is specified for operation at 225°C and is the highest temperature rated commercial non-volatile memory available to date. Initial test results (at 250°C) and design details have been previously reported for a prototype 256Kbit (32Kbit × 8) HTEEPROM fabricated using a production high-temperature silicon-on-insulator (SOI) 0.8 micron CMOS process [1]. This paper presents reliability test results for a commercial version developed using knowledge gained from the previously reported HTEEPROM, and fabricated in the same technology. The reliability test results include data retention at 250°C, endurance (write cycling) > 100,000 cycles, parametric and functional test results for 1000 hours of dynamic life test at 250°C, 100 temperature cycles from −65°C to 200°C, ESD, Group D and residual-gas-analysis (RGA) testing. The HTEEPROM is packaged in a 56-pin ceramic pin-grid-array (PGA) package. It is configurable by a control input pin for either serial or parallel memory access. The design incorporates an on-chip timer to support periodic memory refresh to extend data retention indefinitely.

High Temperature Analog-to-Digital Converter Reliability Testing

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000245-000252 ◽  
Author(s):  
Bruce W. Ohme ◽  
Mark R. Larson
Keyword(s):  
High Temperature ◽  
Silicon On Insulator ◽  
Cmos Process ◽  
Reliability Testing ◽  
Test Results ◽  
Analog To Digital Converter ◽  
Digital Converter ◽  
Life Test ◽  
Analog To Digital ◽  
Post Stress

Initial test results have been previously reported for a high-temperature (225°C) 12-bit analog-to-digital converter (HTADC12) fabricated using a production high-temperature silicon-on-insulator (SOI) CMOS process and assembled in hermetically sealed ceramic packages (ref. 1). Reliability test results for the HTADC12 are presented including parametric and functional test results from 1500 hours of dynamic life test at 250°C as well 1000 temperature cycles from −65°C to 200°C. Results of post-stress wirebond, and die bond testing are also provided.

High Temperature Reliability Investigations up to 350 °C of Gate Oxide Capacitors realized in a Silicon-on-Insulator CMOS-Technology

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000116-000121
Author(s):  
K. Grella ◽  
S. Dreiner ◽  
H. Vogt ◽  
U. Paschen
Keyword(s):  
High Temperature ◽  
Dielectric Breakdown ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Cmos Technology ◽  
Silicon On Insulator ◽  
Cmos Process ◽  
Oxide Breakdown ◽  
Time Dependent Dielectric Breakdown ◽  
Single Poly Eeprom

Standard Bulk-CMOS-technology targets use-temperatures of not more than 175 °C. With Silicon-on-Insulator-technologies (SOI), digital and analog circuitry is possible up to 250 °C and even more, but performance and reliability are strongly affected at these high temperatures. One of the main critical factors is the gate oxide quality and its reliability. In this paper, we present a study of gate oxide capacitor time-dependent dielectric breakdown (TDDB) measurements at temperatures up to 350 °C. The experiments were carried out on gate oxide capacitor structures which were realized in the Fraunhofer 1.0 μm SOI-CMOS process. This technology is based on 200 mm wafers and features, among others, three layers of tungsten metallization with excellent reliability concerning electromigration, voltage independent capacitors, high resistance resistors, and single-poly-EEPROM cells. The gate oxide thickness is 40 nm. Using the data of the TDDB-measurements, the behavior of field and temperature acceleration parameters at temperatures up to 350 °C was evaluated. For a more detailed investigation, the current evolution in time was also studied. An analysis of the oxide breakdown conditions, in particular the field and temperature dependence of the charge to breakdown and the current just before breakdown, completes the study. The presented data provide important information about accelerated oxide reliability testing beyond 250 °C, and make it possible to quickly evaluate the reliability of high temperature CMOS-technologies at use-temperature.

A Study of Tri-Axial Fluxgate Magnetometer

2012 ◽  
Vol 263-266 ◽  
pp. 69-75
Author(s):  
Yue Zhang ◽  
Chen Xiao Cao
Keyword(s):  
High Temperature ◽  
Silicon On Insulator ◽  
Fluxgate Magnetometer ◽  
Test Results ◽  
Original Design ◽  
Technical Specifications ◽  
Result Analysis ◽  
Development Tendency ◽  
Hybrid Circuit ◽  
Better Than

This paper is devoted to study tri-axial fluxgate magnetometer, and it begin with principle of fluxgate magnetometer, and then its structure, electric design and test result analysis are introduced. At present, its development tendency is to simplify and miniaturize, we carried out study of tri-axial fluxgate magnetometer. Its technical specifications such as resolution, noise, response of step up, setting up time and sensitivity meet or even better than original design requirements. At first design of tri-axial fluxgate magnetometer is determined and a transducer is developed. Secondly, a high temperature circuit is developed with SOI (Silicon on Insulator) electronics wafer and hybrid circuit technology. At last, 5 specifications test results are presented from aspects of high temperature and high accuracies, respectively.

High Temperature Characterization up to 450 °C of MOSFETs and basic circuits realized in a Silicon-on-Insulator (SOI) CMOS-Technology

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000227-000232
Author(s):  
K. Grella ◽  
S. Dreiner ◽  
A. Schmidt ◽  
W. Heiermann ◽  
H. Kappert ◽  
...  
Keyword(s):  
High Temperature ◽  
Output Voltage ◽  
Cmos Technology ◽  
Silicon On Insulator ◽  
Ring Oscillator ◽  
Maximum Temperature ◽  
Cmos Process ◽  
Ring Oscillators ◽  
Circuit Function ◽  
Soi Cmos

Standard Bulk-CMOS-technology targets use-temperatures of not more than 175 °C. Silicon-on-Insulator-technologies are commonly used up to 250 °C. In this work we evaluate the limit for electronic circuit function realized in thin film SOI-technologies for even higher temperatures. At Fraunhofer IMS a versatile 1.0 μm SOI-CMOS process based on 200 mm wafers is available. It features three layers of tungsten metalization with excellent reliability concerning electromigration, voltage independent capacitors, various resistors, and single-poly-EEPROMs. We present a study of the temperature dependence of MOSFETs and basic circuits produced in this process. The electrical characteristics of NMOSFET- and PMOSFET-transistors were studied up to 450 °C. In a second step we investigated the functionality of ring oscillators, representing digital circuits, and bandgap references as examples of simple analog components. The frequency and the current consumption of ring oscillators and the output voltage of bandgap references were also characterized up to 450 °C. We found that the ring oscillator still functions at this high temperature with a frequency of about one third of the value at room temperature. The output voltage of the bandgap reference is in the specified range up to 250 °C. The deviations above this temperature are analyzed and measures to improve the circuit are discussed. The acquired data provide an important foundation to extend the application of CMOS-technology to its real maximum temperature limits.

High Temperature Reliability Investigations of EEPROM Memory Cells Realised in Silicon-on-Insulator (SOI) Technology

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000221-000225 ◽  
Author(s):  
K. Grella ◽  
H. Vogt ◽  
U. Paschen
Keyword(s):  
High Temperature ◽  
Data Storage ◽  
Oxide Thickness ◽  
Silicon On Insulator ◽  
Measurement Information ◽  
Cmos Process ◽  
High Temperature Electronics ◽  
Increasing Demand ◽  
Single Poly Eeprom ◽  
Application Fields

Microelectronic manufacturing progresses not only towards further miniaturisation, but also application fields tend to become more and more diverse. Recently there has been an increasing demand for electronic devices and circuits that function in harsh environments such as high temperatures. Under these conditions, reliability aspects are highly critical and testing remains a great challenge. A versatile CMOS process based on 200 mm thin film Silicon-on-Insulator (SOI) wafers is in production at Fraunhofer IMS. It features three layers of tungsten metallisation for optimum electromigration reliability, voltage independent capacitors, high resistance resistors and single-poly-EEPROM cells. Non-volatile memories such as EEPROMs are a key technology that enables flexible data storage, for example of calibration and measurement information. The reliability of these devices is especially crucial in high temperature applications since charge loss is drastically increased in this case. The behaviour of single-poly-EEPROM cells, produced in the process described before, was evaluated up to 450 °C. Data retention tests at temperatures ranging from 160 °C to 450 °C and write/erase cycling tests up to 400 °C were performed. The dependence of write/erase cycling on both temperature and tunnel oxide thickness was studied. These data provide an important foundation to extend the application of high temperature electronics to its maximum limits. The results show that EEPROM cells can be used for special applications even at temperatures higher than 250 °C.

An Analysis of OTP ROM Programmable Devices in 1.0um SOI CMOS

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000226-000231
Author(s):  
Paul W. Moody ◽  
Marshall Soares
Keyword(s):  
High Temperature ◽  
Data Retention ◽  
Non Volatile Memory ◽  
Soi Devices ◽  
Volatile Memory ◽  
Programmable Devices ◽  
Soi Cmos ◽  
Temperature Applications

Recent approaches to provide non-volatile memory for high temperature applications have been performance limited, either by data retention in SOI EEPROM devices, or by using processes not well suited to high temperature. This work examines SOI devices that may provide reliable OTP solutions. Anti-fuse and fuse approaches are analyzed to determine programmability, suitability for in-situ programming, density implications, and data retention.

High Temperature Characterization up to 450°C of MOSFETs and Basic Circuits Realized in a Silicon-on-Insulator (SOI) CMOS Technology

2013 ◽  
Vol 10 (2) ◽  
pp. 67-72 ◽  
Author(s):  
K. Grella ◽  
S. Dreiner ◽  
A. Schmidt ◽  
W. Heiermann ◽  
H. Kappert ◽  
...  
Keyword(s):  
High Temperature ◽  
Band Gap ◽  
Output Voltage ◽  
Cmos Technology ◽  
Digital Circuit ◽  
Silicon On Insulator ◽  
Ring Oscillator ◽  
Maximum Temperature ◽  
Cmos Process ◽  
Soi Cmos

Standard bulk CMOS technology targets operating temperatures of not more than 175°C. Silicon-on-insulator technologies are commonly used up to 250°C. In this work, we evaluate the limit for electronic circuit function realized in thin film SOI technologies for even higher temperatures. At Fraunhofer IMS, a versatile 1.0 μm SOI-CMOS process based on 200 mm wafers is available. It features three layers of tungsten metallization with excellent reliability concerning electromigration, as well as voltage-independent capacitors, various resistors, and single-poly-EEPROMs. We present a study of the temperature dependence of MOSFETs and basic circuits produced in this process. The electrical characteristics of an NMOSFET transistor and a PMOSFET transistor are studied up to 450°C. In a second step, we investigate the functionality of a ring oscillator (representing a digital circuit) and a band gap reference as an example of a simple analog component. The frequency and the current consumption of the ring oscillator, as well as the output voltage and the current of the band gap reference, are characterized up to 450°C. We find that the ring oscillator still oscillates at this high temperature with a frequency of about one third of the value at room temperature. The output voltage of the band gap reference is in the specified range (change < 3%) up to 250°C. The deviations above this temperature are analyzed and measures to improve the circuit are discussed. The acquired data provide an important foundation to extend the application of CMOS technology to its real maximum temperature limits.

Comparison of a Current Mode Reference Generator vs.a ΔVBE Bandgap Circuit in a 1.0μm Partially-Depleted Silicon-On-Insulator CMOS Process for High Temperature (220 °C) Environments

2017 ◽  
Vol 2017 (HiTEN) ◽  
pp. 000234-000237
Author(s):  
Alex Pike ◽  
Adrien Corne ◽  
Frank Bohac ◽  
Ravi Ananth
Keyword(s):  
High Temperature ◽  
High Temperatures ◽  
Wide Temperature Range ◽  
Output Voltage ◽  
Current Mode ◽  
Silicon On Insulator ◽  
The Other ◽  
Cmos Process ◽  
Reference Generator ◽  
A Current

Abstract Two different reference generator circuits were designed, fabricated and tested, on the same silicon die using a 1.0μ CMOS SOI process that is suitable for operation at high temperatures. One of the reference generators was a traditional bandgap circuit. The other was a more novel current-mode reference that can notionally generate any output voltage. Testing was performed over a wide temperature range from −50°C to 220°C with a supply variation of 4V to 6V.

Lifetime and Failure Modes of High Temperature SOI Products

2018 ◽  
Vol 2018 (HiTEC) ◽  
pp. 000112-000115 ◽  
Author(s):  
Derek Maxwell ◽  
Marshall Soares ◽  
Matt Coreless
Keyword(s):  
High Temperature ◽  
Failure Modes ◽  
Extreme Temperature ◽  
Silicon On Insulator ◽  
Accelerated Testing ◽  
Test Results ◽  
Life Test ◽  
Tungsten Metal

Abstract RelChip has performed life test studies on its RAM and has shown that Silicon On Insulator (SOI) processing with Aluminum-Tungsten metal traces can operate for over 4000 hours at 350°C and do not fail due to electromigration. Three parts were randomly selected and functionally tested at the extreme temperature using accelerated testing (HAST). The parts were pulled periodically for in-depth testing and examination. Test results indicate failures are due to device failures, and not electromigration.

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