Silicon Carbide High Temperature Operational Amplifier

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000378-000383 ◽  
Author(s):  
Alexey Vert ◽  
Cheng-Po Chen ◽  
Amita Patil ◽  
Rich Saia ◽  
Emad Andarawis ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Analog Circuits ◽  
Operational Amplifier ◽  
Silicon On Insulator ◽  
Operational Amplifiers ◽  
Attractive Alternative ◽  
Harsh Environment ◽  
Test Fixture ◽  
High Temperature Electronics

Development of silicon carbide operational amplifier offers an attractive alternative building block for the replacement of silicon and silicon-on-insulator analog circuits in harsh environment applications. NMOS-based enhancement mode silicon carbide device technology was utilized to demonstrate feasibility of operational amplifiers for use in harsh environment applications. This study reports on the results of characterization of operational amplifiers at room temperature and high temperatures up to 350°C. The development of high temperature packaging techniques enabled assembly of a functional oscillator board tested up to 350°C. A test fixture with high temperature sockets enabling quick swap of operational amplifiers is also discussed as an important tool in high temperature electronics research and development.

Modeling and Design of High Temperature Silicon Carbide DMOSFET Based Medium Power DC-DC Converter

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000144-000151
Author(s):  
Siddharth Potbhare ◽  
Akin Akturk ◽  
Neil Goldsman ◽  
James M. McGarrity ◽  
Anant Agarwal
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
High Efficiency ◽  
Schottky Diodes ◽  
Power Converter ◽  
Electronic Systems ◽  
High Temperature Electronics ◽  
New Material ◽  
Silicon Power Devices ◽  
Relationship Of

Silicon Carbide (SiC) is a promising new material for high power high temperature electronics applications. SiC Schottky diodes are already finding wide acceptance in designing high efficiency power electronic systems. We present TCAD and Verilog-A based modeling of SiC DMOSFET, and the design and analysis of a medium power DC-DC converter designed using SiC power DMOSFETs and SiC Schottky diodes. The system is designed as a 300W boost converter with a 12V input and 24V/36V outputs. The SiC power converter is compared to another designed with commercially available Silicon power devices to evaluate power dissipation in the DMOSFETs, transient response of the system and its conversion efficiency. SiC DMOSFETs are characterized at high temperature by developing temperature dependent TCAD and Verilog-A models for the device. Detailed TCAD modeling allows probing inside the device for understanding the physical processes of transport, whereas Verilog-A modeling allows us to define the complex relationship of interface traps and surface physics that is typical to SiC DMOSFETs in a compact analytical format that is suitable for inclusion in commercially available circuit simulators.

Development of a 300°C capable SiC based operational amplifier

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000305-000309 ◽  
Author(s):  
Vinayak Tilak ◽  
Cheng-Po Chen ◽  
Peter Losee ◽  
Emad Andarawis ◽  
Zachary Stum
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Operational Amplifier ◽  
Room Temperature ◽  
Open Loop ◽  
Common Source ◽  
Loop Gain ◽  
Long Term Stability ◽  
Silicon Silicon

Silicon carbide based ICs have the potential to operate at temperatures exceeding that of conventional semiconductors such as silicon. Silicon carbide (SiC) based MOSFETs and ICs were fabricated and measured at room temperature and 300°C. A common source amplifier was fabricated and tested at room temperature and high temperature. The gain at room temperature and high temperature was 7.6 and 6.8 respectively. A SiC MOSFET based operational amplifier was also fabricated and tested at room temperature and 300°C. The small signal open loop gain at 1kHz was 60 dB at room temperature and 57 dB at 300°C. Long term stability testing at 300°C of the MOSFET and common source amplifiers showed very little drift.

4H-Silicon Carbide p-n Diode for High Temperature (600 °C) Environment Applications

2015 ◽  
Vol 821-823 ◽  
pp. 636-639 ◽  
Author(s):  
Shi Qian Shao ◽  
Wei Cheng Lien ◽  
Ayden Maralani ◽  
Jim C. Cheng ◽  
Kristen L. Dorsey ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Harsh Environment ◽  
Stable Operation ◽  
Temperature Changes ◽  
Turn On ◽  
Sensing Applications ◽  
Depth Study ◽  
Fabrication And Characterization

In this work, we demonstrate the stable operation of 4H-silicon carbide (SiC) p-n diodes at temperature up to 600 °C. In-depth study methods of simulation, fabrication and characterization of the 4H-SiC p-n diode are developed. The simulation results indicate that the turn-on voltage of the 4H-SiC p-n diode changes from 2.7 V to 1.45 V as the temperature increases from 17 °C to 600 °C. The turn-on voltages of the fabricated 4H-SiC p-n diode decreases from 2.6 V to 1.3 V when temperature changes from 17 °C to 600 °C. The experimental I-V curves of the 4H-SiC p-n diode from 17 °C to 600 °C agree with the simulation ones. The demonstration of the stable operation of the 4H-SiC p-n diodes at high temperature up to 600 °C brings great potentials for 4H-SiC devices and circuits working in harsh environment electronic and sensing applications.

scholarly journals Simulation of a new hybrid Si/SiC power device for harsh environment applications

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000190-000194
Author(s):  
P.M. Gammon ◽  
C.W. Chan ◽  
P.A. Mawby
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Silicon On Insulator ◽  
Power Device ◽  
Harsh Environment ◽  
Silicon Thin Film ◽  
Device Structure ◽  
Solar Inverter ◽  
Thermal Simulations ◽  
Soi Substrates

A new power device structure is proposed, conceived to operate in a high temperature, harsh environment, for example within a motor drive application down hole, as an inverter in the engine bay of an electric car, or as a solar inverter in space. The lateral silicon power device resembles a laterally diffused MOSFET (LDMOS), such as those implemented within silicon on insulator (SOI) substrates. However, unlike SOI, the Si thin film has been transferred directly onto a semi-insulating 6H silicon carbide (6H-SiC) substrate via a wafer bonding process. Thermal simulations of the hybrid Si/SiC substrate have shown that the high thermal conductivity of the SiC will have a junction-to-case temperature approximately 4 times less that an equivalent SOI device, reducing the effects of self-heating. Electrical simulations of a 600 V power device, implemented entirely with the silicon thin film, suggest that it will retain the ability of SOI to minimise leakage at high temperature, but does so with 50% less conduction losses.

High Temperature Reliability Investigations of EEPROM Memory Cells Realised in Silicon-on-Insulator (SOI) Technology

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000221-000225 ◽  
Author(s):  
K. Grella ◽  
H. Vogt ◽  
U. Paschen
Keyword(s):  
High Temperature ◽  
Data Storage ◽  
Oxide Thickness ◽  
Silicon On Insulator ◽  
Measurement Information ◽  
Cmos Process ◽  
High Temperature Electronics ◽  
Increasing Demand ◽  
Single Poly Eeprom ◽  
Application Fields

Microelectronic manufacturing progresses not only towards further miniaturisation, but also application fields tend to become more and more diverse. Recently there has been an increasing demand for electronic devices and circuits that function in harsh environments such as high temperatures. Under these conditions, reliability aspects are highly critical and testing remains a great challenge. A versatile CMOS process based on 200 mm thin film Silicon-on-Insulator (SOI) wafers is in production at Fraunhofer IMS. It features three layers of tungsten metallisation for optimum electromigration reliability, voltage independent capacitors, high resistance resistors and single-poly-EEPROM cells. Non-volatile memories such as EEPROMs are a key technology that enables flexible data storage, for example of calibration and measurement information. The reliability of these devices is especially crucial in high temperature applications since charge loss is drastically increased in this case. The behaviour of single-poly-EEPROM cells, produced in the process described before, was evaluated up to 450 °C. Data retention tests at temperatures ranging from 160 °C to 450 °C and write/erase cycling tests up to 400 °C were performed. The dependence of write/erase cycling on both temperature and tunnel oxide thickness was studied. These data provide an important foundation to extend the application of high temperature electronics to its maximum limits. The results show that EEPROM cells can be used for special applications even at temperatures higher than 250 °C.

Application of High Temperature Electronics Packaging Technology to Signal Conditioning and Processing Circuits

2010 ◽  
Vol 2010 (HITEC) ◽  
pp. 000089-000096 ◽  
Author(s):  
S T Riches ◽  
K Cannon ◽  
C Johnston ◽  
M Sousa ◽  
P Grant ◽  
...  
Keyword(s):  
High Temperature ◽  
Printed Circuit Boards ◽  
High Pressures ◽  
Electronic Materials ◽  
Silicon On Insulator ◽  
Research Centre ◽  
Circuit Boards ◽  
Signal Conditioning ◽  
Metal Substrates ◽  
High Temperature Electronics

The requirement to install electronic power and control systems in high temperature environments has posed a challenge to the traditional limit of 125°C for high temperature exposure of electronics systems. The leap in operating temperature to above 200°C in combination with high pressures, vibrations and potentially corrosive environments means that different semiconductors, passives, circuit boards and assembly processes will be needed to fulfil the target performance specifications. Bare die mounted onto ceramic and insulated metal substrates can withstand higher temperatures than soldered surface mount devices on printed circuit boards. The results of the evaluation of electronic interconnect and substrate materials that have been submitted to temperatures of 250°C for up to 2000 hours will be presented, including details on novel adhesive formulations and high temperature insulated metal substrates. The materials and processes developed have been applied to the manufacture of high temperature circuits representative of analogue signal conditioning and processing, using silicon on insulator devices and passive components mounted into HTCC packages and onto thick film on ceramic substrates. Results of the characterisation of these devices and circuits at temperatures of 250°C for up to 2000 hours will be presented. This work forms part of the UPTEMP project has been set-up with support from UK Technology Strategy Board and the EPSRC, which started in March 2007 with 3 years duration. The project brings together a consortium of end-users (Sondex Wireline and Vibro-Meter UK), electronic module manufacturers (GE Aviation Systems Newmarket) and material suppliers (Gwent Electronic Materials and Thermastrate Ltd) with Oxford University-Materials Department, the leading UK high temperature electronics research centre.

Trends in Automotive Packaging

2014 ◽  
Vol 2014 (DPC) ◽  
pp. 001818-001850 ◽  
Author(s):  
Glenn G. Daves
Keyword(s):  
High Temperature ◽  
Aircraft Engine ◽  
Silicon On Insulator ◽  
Maximum Temperature ◽  
Automotive Electronics ◽  
Sensor Signal ◽  
Signal Conditioning ◽  
Crystal Oscillator ◽  
Term Operation ◽  
High Temperature Electronics

The long-term trend in automobiles has been increasing electronics content over time. This trend is expected to continue and drives diverse functional, form factor, and reliability requirements. These requirements, in turn, are leading to changes in the package types selected and the performance specifications of the packages used for automotive electronics. Several examples will be given. This abstract covers the development of a distributed high temperature electronics demonstrator for integration with sensor elements to provide digital outputs that can be used by the FADEC (Full Authority Digital Electronic Control) system or the EHMS (Engine Health Monitoring System) on an aircraft engine. This distributed electronics demonstrator eliminates the need for the FADEC or EHMS to process the sensor signal, which will assist in making the overall system more accurate and efficient in processing only digital signals. This will offer weight savings in cables, harnesses and connector pin reduction. The design concept was to take the output from several on-engine sensors, carry out the signal conditioning, multiplexing, analogue to digital conversion and data transmission through a serial data bus. The unit has to meet the environmental requirements of DO-160 with the need to operate at 200°C, with short term operation at temperatures up to 250°C. The work undertaken has been to design an ASIC based on 1.0 μm Silicon on Insulator (SOI) device technology incorporating sensor signal conditioning electronics for sensors including resistance temperature probes, strain gauges, thermocouples, torque and frequency inputs. The ASIC contains analogue multiplexers, temperature stable voltage band-gap reference and bias circuits, ADC, BIST, core logic, DIN inputs and two parallel ARINC 429 serial databuses. The ASIC was tested and showed to be functional up to a maximum temperature of 275°C. The ASIC has been integrated with other high temperature components including voltage regulators, a crystal oscillator, precision resistors, silicon capacitors within a hermetic hybrid package. The hybrid circuit has been assembled within a stainless steel enclosure with high temperature connectors. The high temperature electronics demonstrator has been demonstrated operating from −40°C to +250°C. This work has been carried out under the EU Clean Sky HIGHTECS project with the Project being led by Turbomeca (Fr) and carried out by GE Aviation Systems (UK), GE Research – Munich (D) and Oxford University (UK).

Realisation of High Temperature Electronics Packaging Technology for Sensor Conditioning and Processing Applications

2012 ◽  
Vol 2012 (1) ◽  
pp. 000192-000199
Author(s):  
S T Riches ◽  
C Johnston ◽  
A Lui
Keyword(s):  
High Temperature ◽  
High Pressures ◽  
Silicon On Insulator ◽  
Electrical Performance ◽  
Operating Life ◽  
Reliability Data ◽  
High Temperature Electronics ◽  
Aero Engine ◽  
Operating Temperatures

The requirement to install electronic power and control systems in high temperature environments in aero-engines and in down-well exploration has posed a challenge to the traditional limit of 125°C of electronics systems. The leap in operating temperature to above 200°C in combination with high pressures, vibrations and potentially corrosive environments means that different semiconductors, passives, circuit boards and assembly processes will be needed to fulfil target performance specifications. Silicon on Insulator (SOI) device technology has been shown to be capable of functioning satisfactorily at operating temperatures of >200°C. Most of the applications to date have required performance for short times (<2,000 hours) at the highest operating temperatures of up to 225°C in down-well drilling applications. There is interest in extending the endurance of high temperature electronics into aero-engine and other applications where a minimum 20 year operating life is stipulated. Most of the reliability data on the high temperature endurance of the integrated circuit is generated with little consideration of the packaging technologies, whilst most of the reliability data pertinent to high temperature packaging technologies uses test pieces, which limits any conclusions relating to long term electrical performance. This paper will present results of studies on high temperature packaging technologies relevant to signal conditioning and processing functions for sensors in down-well and aero-engine applications. Different die attach and wire bond options have been included in the study and the performance of several functional blocks on a high temperature SOI device has been tracked over the endurance tests which have lasted for >11,000 hours at 250°C. Degradation phenomena such as thermal migration and material deterioration due to high temperature exposure in air and inert atmospheres will be described. An assessment of the availability of high temperature materials and components to meet long term requirements for operation at 250°C will be presented.

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