Strain Measurement and Mechanical Property Evolution in Sol-Gel PZT Thin Films

2013 ◽  
Vol 2013 (CICMT) ◽  
pp. 000033-000038
Author(s):  
T.A. Berfield ◽  
T. Hoang ◽  
D.A. Porter ◽  
B.J. Meuris
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Thermal Loading ◽  
Failure Modes ◽  
Axial Stress ◽  
Sol Gel ◽  
Correlation Method ◽  
Image Correlation ◽  
Pzt Thin Films ◽  
Curvature Measurements

Cracking is a notorious issue with sol-gel PZT thin films, and film failure in this manner is difficult to reliably predict due to constantly evolving mechanical properties. In this work, two non-contact experimental methods are used to quantify the stiffness response of PZT sol-gel during thermal loading and the influence of solution additives, such as lactic acid and gycerol. The mechanical properties are determined using a digital image correlation method to measure strain and wafer curvature measurements to estimate bi-axial stress. Results show the transition from a compliant response to more glassy behavior. The importance of this changing stiffness is shown for a specific application of a buckled MEMS actuator and in relation to adhesion based failure modes.

Investigation of the Crystalline Orientations and Substrates Dependence on Mechanical Properties of PZT Thin Films by Nanoindentation

2008 ◽  
Vol 1129 ◽  
Author(s):  
Dan Liu ◽  
Sang H Yoon ◽  
Bo Zhou ◽  
Barton C Prorok ◽  
Dong-Joo Kim
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Silicon Oxide ◽  
Sol Gel ◽  
Chelating Agent ◽  
Silicon Substrates ◽  
Pzt Thin Films ◽  
Different Types ◽  
Continuous Stiffness Measurement ◽  
Combined Parameters

AbstractIn this paper, we investigated the effects of the substrates and crystalline orientations on the mechanical properties of Pb(Zr0.52Ti0.48)O3 thin films. The PZT thin films were deposited by sol-gel method on platinized silicon substrates with different types of layer materials such as silicon nitride and silicon oxide. The crystalline orientations of PZT thin films were controlled by combined parameters of a chelating agent and pyrolysis temperature. A nanoindentation CSM (continuous stiffness measurement) technique was employed to characterize the mechanical properties of those PZT thin films. It was observed that (001/100)-oriented films show a higher Young’s modulus compared to films with mixed orientations of (110) and (111), indicating a clear dependence on film orientation. The influence of substrates on the mechanical properties of PZT thin films was also characterized. Finally, no significant influence of the film thickness was found on the mechanical properties of films thicker than 200 nm.

Preparation and Electrical Characteristics of (100), (111), and Randomly Oriented PZT Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
Chang Jung Kim ◽  
Dae Sung Yoon ◽  
Joon Sung Lee ◽  
Chaun Gi Choi ◽  
Won Jong Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Test System ◽  
Electrical Characteristics ◽  
Pzt Thin Films ◽  
Pole Figures ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Drying Conditions

ABSTRACTThe (100), (111) and randomly oriented PZT thin films were fabricated on Pt/Ti/Coming 7059 glass using sol-gel method. The thin films having different orientation were fabricated by different drying conditions for pyrolysis. The preferred orientations of the PZT thin films were observed using XRD, rocking curves, and pole figures. The microstructures were investigated using SEM. The hysteresis loops and capacitance-voltage characteristics of the films were investigated using a standardized ferroelectric test system. The dielectric constant and current-voltage characteristics of the films were investigated using an impedance analyzer and pA meter, respectively. The films oriented in a particular direction showed superior electrical characteristics to the randomly oriented films.

Structural and mechanical properties of lanthanide doped La1/3Nb0.8Ta0.2O3 thin films prepared by sol–gel method

2017 ◽  
Vol 26 (4) ◽  
pp. 045009 ◽  
Author(s):  
Helena Brunckova ◽  
Lubomir Medvecky ◽  
Alexandra Kovalcikova ◽  
Martin Fides ◽  
Erika Mudra ◽  
...  
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method

The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Seung-Hyun Kim ◽  
J. G. Hong ◽  
J. C. Gunter ◽  
H. Y. Lee ◽  
S. K. Streiffer ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Chemical Solution ◽  
Electrode Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

Importance Of Solution Chemistry In Preparing Sol–Gel PZT Thin Films Directly On Copper Surfaces

2008 ◽  
Vol 20 (1) ◽  
pp. 303-307 ◽  
Author(s):  
Mark D. Losego ◽  
Jon F. Ihlefeld ◽  
Jon-Paul Maria
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Solution Chemistry ◽  
Pzt Thin Films ◽  
Copper Surfaces

scholarly journals Nanostructure Analysis of Sol-gel PZT Thin Films Derived from Different Chemical Routes

2009 ◽  
Vol 15 (S3) ◽  
pp. 53-54
Author(s):  
Aiying Wu ◽  
P. M. Vilarinho
Keyword(s):  
Thin Films ◽  
Data Storage ◽  
Chemical Reactivity ◽  
Sol Gel ◽  
Random Access ◽  
Lead Zirconate ◽  
Piezoelectric Response ◽  
Metal Alkoxides ◽  
Pzt Thin Films ◽  
Wide Range

AbstractLead zirconate - lead titanate (PZT) materials are commercially important piezoelectric and ferroelectrics in a wide range of applications, such as data storage (dynamic access and ferroelectric random access memories) and sensing and actuating devices. PZT with the morphotropic phase boundary composition offers the highest piezoelectric response and at the present there are no fullydeveloped alternative materials to PZT. The importance of PZT associated with the continuous requirements of device miniaturization, imposes the development of high quality PZT thin films with optimized properties. Concomitantly due to the dependence of the final properties of thin films on the details of the microstructure a thoroughly analysis at the local scale of their microstructure is necessary. Sol-gel method, is one of the Chemical Solution Deposition techniques used to prepare oxide thin films, such as PZT. Starting from a solution, a solid network is progressively formed via inorganic polymerisation reactions. Most metal alkoxides used for sol-gel synthesis are highly reactive towards hydrolysis and condensation. Therefore their chemical reactivity has to be tailored via the chemical modification (or complexation) of metal alkoxides to avoid uncontrolled reactions and precipitation. For PZT sol gel thin film preparation, two chemical routes are frequently used depending on the nature of the molecular precursor, namely methotoxyethanol (MOE) route and diol-route.

A Study on the Piezoelectric Properties of PZT and Doped PZT Thin Films by Sol-Gel Method

2010 ◽  
Vol 663-665 ◽  
pp. 650-653
Author(s):  
Jin Moo Byun ◽  
Jeong Sun Han ◽  
Jae Hyoung Park ◽  
Seong Eui Lee ◽  
Hee Chul Lee
Keyword(s):  
Thin Films ◽  
Piezoelectric Coefficient ◽  
Energy Harvester ◽  
Sol Gel ◽  
Pure Perovskite Structure ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Si Substrates ◽  
Pzt Thin Film

This study examined the effect of crystalline orientation and dopants such as Nb and Zn on the piezoelectric coefficient of sol-gel driven Pb1(Zr0.52Ti0.48)O3(PZT) and doped PZT thin films. Crack-free 1-μm-thick PZT and doped PZT thin films prepared by using 2-Methoxyethanol-based sol-gel method were fabricated on Pt/Ti/SiO2/Si substrates. The highly (111) oriented PZT thin films of pure perovskite structure could be obtained by controlling various parameters such as a PbTiO3 seed layer and a concentration of sol-gel solution. The Nb-Zn doped PZT thin films exhibited high piezoelectric coefficient which was about 50 % higher than that of undoped PZT thin film. The highest measured piezoelectric coefficient was 240 pC/N, which could be applicable to piezoelectrically operated MEMS actuator, sensor, or energy harvester devices.

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