Electrical and mechanical properties of PZT thin films prepared by hybrid process of sol-gel technique and laser ablation

2002 ◽  
Author(s):  
Lulu Zhang ◽  
Masaaki Ichiki ◽  
Zhanjie Wang ◽  
Ryutaro Maeda
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Laser Ablation ◽  
Sol Gel ◽  
Hybrid Process ◽  
Pzt Thin Films ◽  
Gel Technique

Low-temperature preparation of highly (111) oriented PZT thin films by a modified sol–gel technique

2000 ◽  
Vol 208 (1-4) ◽  
pp. 541-545 ◽  
Author(s):  
X.J Meng ◽  
J.G Cheng ◽  
B Li ◽  
S.L Guo ◽  
H.J Ye ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Low Temperature Preparation ◽  
Gel Technique ◽  
Temperature Preparation

Electrical Properties of Crystalline and Amorphous Pb(ZrxTi1−x)O3 Thin Films Prepared by the Sol-Gel Technique

1992 ◽  
Vol 271 ◽  
Author(s):  
Yuhuan Xu ◽  
Chih-Hsing Cheng ◽  
Ren Xu ◽  
John D. Mackenzie
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Dip Coating ◽  
Metal Substrate ◽  
Pzt Thin Films ◽  
Heat Treated ◽  
Pzt Films ◽  
Gel Technique

ABSTRACTPb(ZrxTi1−x)O3 (PZT) solutions were prepared by reacting lead 2-ethylhexanoate with titanium n-propoxide and zirconium n-propoxide. Films were deposited on several kinds of metal substrate by dip-coating. Crystalline PZT films and amorphous PZT films were heat-treated for 1 hour at 650°C and at 400°C, respectively. Electrical properties including dielectric, pyroelectric and ferroelectric properties of both crystalline and amorphous PZT films were measured and compared. The amorphous PZT thin films exhibited ferroelectric-like behaviors.

Transmission Electron Microscopy of Pzt Thin-Films Prepared by A Sol-Gel Technique

1993 ◽  
Vol 310 ◽  
Author(s):  
Supapan Seraphin ◽  
Dan Zhou ◽  
G. Teowee ◽  
J.M. Boulton ◽  
D.R. Uhlmann
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Chemical Compositions ◽  
Pzt Thin Films ◽  
Transmission Electron ◽  
Average Grain Size ◽  
Gel Technique

AbstractThe microstructure of lead zirconate titanate (PZT) thin films prepared by a sol-gel technique was investigated using transmission electron microscopy (TEM) and transmission electron diffraction. We investigated the microstructure of three sets of thin films with different chemical compositions: PZT 53/47 films with no excess PbO; with excess PbO; and PZT 65/35 with no excess PbO. All samples were fired for 30 minutes at temperatures ranging from 400C to 700C. Incorporation of excess PbO in the 53/47 film fired at 450C resulted in polycrystalline perovskite grains with an average grain size of less than 0.1 μm. Grain boundaries are decorated by 5-10 nm diameter precipitates possibly caused by the segregation of remnant pyrochlore or excess PbO. The films have high values of dielectric constant (up to 2500) when fired at 700C. PZT 65/35 fired at 700C consists of two distinct phases: a fine-grained matrix of pyrochlore, and 10-μm diameter rosettes of perovskite. The correlations between the compositions, the microstructure of the films, and their processing conditions on the one hand, and ferroelectric properties on the other are discussed.

Investigation of the Crystalline Orientations and Substrates Dependence on Mechanical Properties of PZT Thin Films by Nanoindentation

2008 ◽  
Vol 1129 ◽  
Author(s):  
Dan Liu ◽  
Sang H Yoon ◽  
Bo Zhou ◽  
Barton C Prorok ◽  
Dong-Joo Kim
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Silicon Oxide ◽  
Sol Gel ◽  
Chelating Agent ◽  
Silicon Substrates ◽  
Pzt Thin Films ◽  
Different Types ◽  
Continuous Stiffness Measurement ◽  
Combined Parameters

AbstractIn this paper, we investigated the effects of the substrates and crystalline orientations on the mechanical properties of Pb(Zr0.52Ti0.48)O3 thin films. The PZT thin films were deposited by sol-gel method on platinized silicon substrates with different types of layer materials such as silicon nitride and silicon oxide. The crystalline orientations of PZT thin films were controlled by combined parameters of a chelating agent and pyrolysis temperature. A nanoindentation CSM (continuous stiffness measurement) technique was employed to characterize the mechanical properties of those PZT thin films. It was observed that (001/100)-oriented films show a higher Young’s modulus compared to films with mixed orientations of (110) and (111), indicating a clear dependence on film orientation. The influence of substrates on the mechanical properties of PZT thin films was also characterized. Finally, no significant influence of the film thickness was found on the mechanical properties of films thicker than 200 nm.

Strain Measurement and Mechanical Property Evolution in Sol-Gel PZT Thin Films

2013 ◽  
Vol 2013 (CICMT) ◽  
pp. 000033-000038
Author(s):  
T.A. Berfield ◽  
T. Hoang ◽  
D.A. Porter ◽  
B.J. Meuris
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Thermal Loading ◽  
Failure Modes ◽  
Axial Stress ◽  
Sol Gel ◽  
Correlation Method ◽  
Image Correlation ◽  
Pzt Thin Films ◽  
Curvature Measurements

Cracking is a notorious issue with sol-gel PZT thin films, and film failure in this manner is difficult to reliably predict due to constantly evolving mechanical properties. In this work, two non-contact experimental methods are used to quantify the stiffness response of PZT sol-gel during thermal loading and the influence of solution additives, such as lactic acid and gycerol. The mechanical properties are determined using a digital image correlation method to measure strain and wafer curvature measurements to estimate bi-axial stress. Results show the transition from a compliant response to more glassy behavior. The importance of this changing stiffness is shown for a specific application of a buckled MEMS actuator and in relation to adhesion based failure modes.

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