Improving Efficiency in Downhole Power Converters using GaN Technology

2016 ◽  
Vol 2016 (HiTEC) ◽  
pp. 000097-000105
Author(s):  
Gary Hanington
Keyword(s):  
Power Efficiency ◽  
Elevated Temperatures ◽  
Extreme Environments ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
The Past ◽  
Silicon Devices ◽  
Electron Mobility Transistors ◽  
Squeeze Out ◽  
Bandgap Semiconductors

Abstract In downhole applications, the ability to convert wildly varying wireline voltages standard +/− 15 VDC stretches the limit on switching converters whose components have to be rugged, compact, and offer low thermal paths to surrounding metal housings. Many times the incoming voltages exceed 200V with spikes above 500 quite common. Functioning in extreme environments up to 200 degrees Celsius requires the designer to squeeze out the highest power efficiency possible and every percent increase is an important milestone. Over the past three decades silicon devices were the only technology available that could be made to work at such temperatures, almost always bypassing the manufacturer's maximum specifications. In the past several years wide bandgap semiconductors have become available that offer new possibilities for operation at elevated temperatures. This paper discusses the efficiency improvements when silicon power devices are replaced with gallium nitride based components. By utilizing GaN High Electron Mobility Transistors (HEMTs) in an existing H bridge phase shifted converter, efficiency improvements of up to 9% have been achieved at 175 °C operation. Advantages of HEMT devices compared to silicon are discussed and associated loss mechanisms of both are compared.

DEPENDENCE OF RF PERFORMANCE OF GaN/AlGaN HEMTS UPON AlGaN BARRIER LAYER VARIATION

2004 ◽  
Vol 14 (03) ◽  
pp. 750-755 ◽  
Author(s):  
ELIAS FARACLAS ◽  
RICHARD T. WEBSTER ◽  
GEORGE BRANDES ◽  
A. F. M. ANWAR
Keyword(s):  
Elevated Temperatures ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Gate Bias ◽  
High Electron Mobility ◽  
Electron Mobility Transistors ◽  
Algan Barrier ◽  
Unity Gain ◽  
Algan Barrier Layer ◽  
Rf Performance

The dependence of microwave performance of GaN/AlGaN High Electron Mobility Transistors (HEMTs), namely the unity gain current cut-off frequency (fT) and the maximum oscillation frequency (fMAX), are reported as a function of the mole fraction of Al and the thickness of the barrier AlGaN layer. The parameters are computed using a physics-based model and compared to experimental results. Schrödinger and Poisson's equations are solved self-consistently to relate the applied gate bias to the channel electron concentration. The contributions of both spontaneous and piezoelectric polarizations towards f T are explored. Finally, because of interest in using this family of devices at elevated temperatures, each simulation was repeated between 300K and 500K for comparison.

scholarly journals A GaN HEMT Amplifier Design for Phased Array Radars and 5G New Radios

Micromachines ◽  
2020 ◽  
Vol 11 (4) ◽  
pp. 398
Author(s):  
Dawid Kuchta ◽  
Daniel Gryglewski ◽  
Wojciech Wojtasiak
Keyword(s):  
Output Power ◽  
Power Efficiency ◽  
High Electron Mobility Transistors ◽  
Phase Changes ◽  
High Electron ◽  
Frequency Range ◽  
Gan Hemt ◽  
Electron Mobility Transistors ◽  
Amplifier Design ◽  
Gan On Si

Power amplifiers applied in modern active electronically scanned array (AESA) radars and 5G radios should have similar features, especially in terms of phase distortion, which dramatically affects the spectral regrowth and, moreover, they are difficult to be compensated by predistortion algorithms. This paper presents a GaN-based power amplifier design with a reduced level of transmittance distortions, varying in time, without significantly worsening other key features such as output power, efficiency and gain. The test amplifier with GaN-on-Si high electron mobility transistors (HEMT) NPT2018 from MACOM provides more than 17 W of output power at the 62% PAE over a 1.0 GHz to 1.1 GHz frequency range. By applying a proposed design approach, it was possible to decrease phase changes on test pulses from 0.5° to 0.2° and amplitude variation from 0.8 dB to 0.2 dB during the pulse width of 40 µs and 40% duty cycle.

HVPE-GROWN AlGaN/GaN HEMTs

2003 ◽  
Vol 764 ◽  
Author(s):  
B. Luo ◽  
F. Ren ◽  
M. A. Mastro ◽  
D. Tsvetkov ◽  
A. Pechnikov ◽  
...  
Keyword(s):  
High Electron Mobility Transistors ◽  
Hydride Vapor Phase Epitaxy ◽  
Root Mean Square Roughness ◽  
High Electron ◽  
Electron Mobility Transistors ◽  
Current Collapse ◽  
Collapse Characteristics ◽  
Capacitance Voltage ◽  
Source Current ◽  
Measurement Area

AbstractHigh quality undoped AlGaN/GaN high electron mobility transistors(HEMTs) structures have been gorwn by Hydride Vapor Phase Epitaxy (HVPE). The morphology of the films grown on Al2O3 substrates is excellent with root-mean-square roughness of ∼0.2nm over 10×10μm2 measurement area. Capacitance-voltage measurements show formation of dense sheet of charge at the AlGaN/GaN interface. HEMTs with 1μm gate length fabricated on these structures show transconductances in excess of 110 mS/mm and drain-source current above 0.6A/mm. Gate lag measurements show similar current collapse characteristics to HEMTs fabricated in MBE- or MOCVD grown material.

IR Thermography for Temperature Measurements and Fault Location on AlGaN/GaN HEMTs and MMICs

2015 ◽  
Author(s):  
Lény Baczkowski ◽  
Franck Vouzelaud ◽  
Dominique Carisetti ◽  
Nicolas Sarazin ◽  
Jean-Claude Clément ◽  
...  
Keyword(s):  
Fault Location ◽  
Hot Spot ◽  
Life Time ◽  
High Electron Mobility Transistors ◽  
Junction Temperature ◽  
High Electron ◽  
Ir Thermography ◽  
Operating Life ◽  
Gan Hemt ◽  
Electron Mobility Transistors

Abstract This paper shows a specific approach based on infrared (IR) thermography to face the challenging aspects of thermal measurement, mapping, and failure analysis on AlGaN/GaN high electron-mobility transistors (HEMTs) and MMICs. In the first part of this paper, IR thermography is used for the temperature measurement. Results are compared with 3D thermal simulations (ANSYS) to validate the thermal model of an 8x125pm AIGaN/GaN HEMT on SiC substrate. Measurements at different baseplate temperature are also performed to highlight the non-linearity of the thermal properties of materials. Then, correlations between the junction temperature and the life time are also discussed. In the second part, IR thermography is used for hot spot detection. The interest of the system for defect localization on AIGaN/GaN HEMT technology is presented through two case studies: a high temperature operating life test and a temperature humidity bias test.

scholarly journals Design and Switching Characteristics of Flip-Chip GaN Half-Bridge Modules Integrated with Drivers

2021 ◽  
Vol 11 (15) ◽  
pp. 7057
Author(s):  
Lin Wang ◽  
Zhe Cheng ◽  
Zhi-Guo Yu ◽  
De-Feng Lin ◽  
Zhe Liu ◽  
...  
Keyword(s):  
Flip Chip ◽  
High Electron Mobility Transistors ◽  
Wire Bonding ◽  
High Electron ◽  
Parasitic Inductance ◽  
Switching Performance ◽  
Turn On ◽  
Electron Mobility Transistors ◽  
Chip Technology ◽  
Switching Characteristics

Half-bridge modules with integrated GaN high electron mobility transistors (HEMTs) and driver dies were designed and fabricated in this research. Our design uses flip-chip technology for fabrication, instead of more generally applied wire bonding, to reduce parasitic inductance in both the driver-gate and drain-source loops. Modules were prepared using both methods and the double-pulse test was applied to evaluate and compare their switching characteristics. The gate voltage (Vgs) waveform of the flip-chip module showed no overshoot during the turn-on period, and a small oscillation during the turn-off period. The probabilities of gate damage and false turn-on were greatly reduced. The inductance in the drain-source loop of the module was measured to be 3.4 nH. The rise and fall times of the drain voltage (Vds) were 12.9 and 5.8 ns, respectively, with an overshoot of only 4.8 V during the turn-off period under Vdc = 100 V. These results indicate that the use of flip-chip technology along with the integration of GaN HEMTs with driver dies can effectively reduce the parasitic inductance and improve the switching performance of GaN half-bridge modules compared to wire bonding.

Low-Frequency Noise Investigation of AlGaN/GaN High-Electron-Mobility Transistors

2021 ◽  
pp. 108050
Author(s):  
Maria Glória Caño de Andrade ◽  
Luis Felipe de Oliveira Bergamim ◽  
Braz Baptista Júnior ◽  
Carlos Roberto Nogueira ◽  
Fábio Alex da Silva ◽  
...  
Keyword(s):  
Electron Mobility ◽  
Low Frequency ◽  
High Electron Mobility Transistors ◽  
Frequency Noise ◽  
High Electron ◽  
Low Frequency Noise ◽  
High Electron Mobility ◽  
Electron Mobility Transistors
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