Ultralow Residue (ULR) Semiconductor Grade Fluxes for Flip-Chip and MEMs Applications

2015 ◽  
Vol 2015 (DPC) ◽  
pp. 001475-001501
Author(s):  
Maria Durham ◽  
SzePei Lim ◽  
Jason Chou ◽  
Andy Mackie
Keyword(s):  
Failure Mode ◽  
Flip Chip ◽  
Failure Modes ◽  
Solder Bump ◽  
Yield Loss ◽  
Joint Damage ◽  
Jet Impingement ◽  
Pillar Height

Copper pillars topped with solder microbumps are emerging as a standard flip-chip solder bump replacement in the semiconductor assembly industry. The relentless drive towards finer pitch, combined with reduced copper pillar height, makes aqueous cleaning of flip-chip flux residues more difficult. An emergent failure mode is joint damage and subsequent yield loss during aqueous jet impingement. The move towards semiconductor grade ultralow residue no-clean fluxes and away from cleaning processes is therefore inevitable for both flip-chip and MEMS applications to meet industry roadmap challenges. The low residue also optimizes underfill adhesion and decreases possible outgassing during underfill cure. This paper discusses the variety of new and emerging failure modes for new packing processes using thinned die with copper-pillar/microbumps. The testing of assembly materials for this purpose will also be discussed.

Development of Lead-Free Flip Chip Package and Its Reliability

2003 ◽  
Author(s):  
Jeffrey C. B. Lee ◽  
Sting Wu ◽  
H. L. Chou ◽  
Yi-Shao Lai
Keyword(s):  
Failure Mode ◽  
Flip Chip ◽  
Failure Modes ◽  
Solder Bump ◽  
Wire Bonding ◽  
Point Of View ◽  
Lead Free ◽  
Temperature Cycle ◽  
Snagcu Solder ◽  
Temperature Cycle Test

SnAgCu solder used in laminate package like PBGA and CSP BGA to replace eutectic SnPb as interconnection has become major trend in the electronic industry. But unlike well-known failure mode of wire bonding package, flip chip package with SnAgCu inner solder bump and external solder ball as electrical interconnection present a extremely different failure mode with wire-bonding package from a point of view in material and process. In this study, one 16mm×16mm 3000 I/O SnAgCu wafer bumping using screen-printing process was explored including the effects of reflow times, high temperature storage life (HTSL) and temperature cycle test (TCT) on bump shear strength. Furthermore, the qualified wafer bumping is assembled by flip chip assembly with various underfill material and specific organic build-up substrate, then is subject to MSL4/260°C precondition and temperature cycle test to observe the underfill effect on SnAgCu bump protection and solder joint life. Various failure modes in the flip chip package like solder bump, underfill and UBM and so on, will be scrutinized with SEM. And finally, best material combination will be addressed to make the lead free flip package successful.

Electromigration Performance of Flip-Chips with Lead-Free Solder Bumps between 30 μm and 60 μm Diameter

2012 ◽  
Vol 2012 (1) ◽  
pp. 000891-000905 ◽  
Author(s):  
Rainer Dohle ◽  
Stefan Härter ◽  
Andreas Wirth ◽  
Jörg Goßler ◽  
Marek Gorywoda ◽  
...  
Keyword(s):  
Flip Chip ◽  
Failure Modes ◽  
Solder Bump ◽  
Void Formation ◽  
Lead Free ◽  
Large Temperature ◽  
Flip Chips ◽  
Solder Bumps ◽  
Current Densities

As the solder bump sizes continuously decrease with scaling of the geometries, current densities within individual solder bumps will increase along with higher operation temperatures of the dies. Since electromigration of flip-chip interconnects is highly affected by these factors and therefore an increasing reliability concern, long-term characterization of new interconnect developments needs to be done regarding the electromigration performance using accelerated life tests. Furthermore, a large temperature gradient exists across the solder interconnects, leading to thermomigration. In this study, a comprehensive overlook of the long-term reliability and analysis of the achieved electromigration performance of flip-chip test specimen will be given, supplemented by an in-depth material science analysis. In addition, the challenges to a better understanding of electromigration and thermomigration in ultra fine-pitch flip-chip solder joints are discussed. For all experiments, specially designed flip-chips with a pitch of 100 μm and solder bump diameters of 30–60 μm have been used [1]. Solder spheres can be made of every lead-free alloy (in our case SAC305) and are placed on a UBM which has been realized for our test chips in an electroless nickel process [2]. For the electromigration tests within this study, multiple combinations of individual current densities and temperatures were adapted to the respective solder sphere diameters. Online measurements over a time period up to 10,000 hours with separate daisy chain connections of each test coupon provide exact lifetime data during the electromigration tests. As failure modes have been identified: UBM consumption at the chip side or depletion of the Nickel layer at the substrate side, interfacial void formation at the cathode contact interface, and - to a much lesser degree - Kirkendall-like void formation at the anode side. A comparison between calculated life time data using Weibull distribution and lognormal distribution will be given.

Underfill Assessments and Validations for Low-k FCBGA

2006 ◽  
Author(s):  
Nicholas Kao ◽  
Jeng Yuan Lai ◽  
Jase Jiang ◽  
Yu Po Wang ◽  
C. S. Hsiao
Keyword(s):  
Finite Element ◽  
High Speed ◽  
Flip Chip ◽  
Failure Modes ◽  
Solder Bump ◽  
Material Selection ◽  
Coefficient Of Thermal Expansion ◽  
Electrical Performance ◽  
Low K ◽  
Underfill Material

With the trend of electronic consumer product toward more functionality, high performance and miniaturization, IC chip is required to deliver more I/Os signals and better electrical characteristics under same package form factor. Thus, Flip Chip BGA (FCBGA) package was developed to meet those requirements offering better electrical performance, more I/O pins accommodation and high transmission speed. For high-speed application, the low dielectric constant (low-k) material that can effectively reduce the signal delays is extensively used in IC chips. However, the low-k material possesses fragile mechanical property and high coefficient of thermal expansion (CTE) compared with silicon chip, which raises the reliability concerns of low-k material integrated into IC chip. The typical reliability failure modes are low-k layer delamination and bump crack under temperature loading during assembly and reliability test. Delamination is occurred in the interface between low-k dielectric layers and underfill material at chip corner. Bump crack is at Under Bump Metallization (UBM) corner. Thus, the adequate underfill material selection becomes very important for both solder bump and low-k chips [1]. This paper mainly characterized FCBGA underfill materials to guide the adequate candidates to prevent failures on low-k chip and solder bump. Firstly, test vehicle was a FCBGA package with heat spreader and was investigated the thermal stress by finite element models. In order to analyze localized low-k structures, sub-modeling technique is used for underfill characterizations. Then, the proper underfill candidates picked from modeling results were experimentally validated by reliability tests. Finally, various low-k FCBGA package structures were also studied with same finite element technique.

Solder Bump Strength and Failure Mode of Low-k Flip Chip Device

2006 ◽  
Author(s):  
Zulkarnain Endut ◽  
Ibrahim Ahmad ◽  
Gary Lee How Swee ◽  
Norazham Mohd Sukemi
Keyword(s):  
Failure Mode ◽  
Flip Chip ◽  
Solder Bump ◽  
Low K

Failure behavior upon shear test of 5Sn–95Pb solder bump after high temperature reliability test

2004 ◽  
Vol 19 (8) ◽  
pp. 2471-2477 ◽  
Author(s):  
Yeh-Hsiu Liu ◽  
Chiang-Ming Chuang ◽  
Kwang-Lung Lin
Keyword(s):  
Shear Strength ◽  
High Temperature ◽  
Intermetallic Compound ◽  
Shear Test ◽  
Flip Chip ◽  
Failure Modes ◽  
Solder Bump ◽  
Failure Behavior ◽  
Intermetallic Compound Formation ◽  
Long Time

The shear strength, intermetallic compound formation, and failure mechanism of high-lead solder (5Sn–95Pb) bump on flip chip under bump metallurgy, Al/Ni(V)/Cu, were investigated after thermal cycling, multiple reflow, and high-temperature aging. Two kinds of intermetallic compound, Cu3Sn and AlxNiy, were found at the interface. The Cu3Sn was formed between the solder and Ni(V) layer while AlxNiy was formed between Ni(V) and Al layer. The formation of the Cu3Sn compound will not affect the shear strength, 27–30 g, of the solder bump even after a high temperature long time aging test. However, the shear strength after the 30th reflow drops to less than 25 g, ascribed to the formation of a brittle compound, AlxNiy. The failure modes of the solder bump upon shear test were also discussed.

Maskless Process for Fabrication of Ultra-Fine Pitch Solder Bumps for Flip Chip Interconnects

2003 ◽  
Vol 125 (4) ◽  
pp. 597-601
Author(s):  
R. T. P. Lee ◽  
A. S. Zuruzi ◽  
S. K. Lahiri
Keyword(s):  
Failure Mode ◽  
Flip Chip ◽  
Solder Bump ◽  
Low Cost ◽  
High Stress ◽  
Lead Free ◽  
Fine Pitch ◽  
Solder Bumps ◽  
Dimensional Uniformity ◽  
Lift Off

The results of this study demonstrate the viability of a low cost maskless process for the fabrication of ultra-fine pitch solder bumps. The fabricated solder bump arrays have a pitch and diameter of 120 and 70 μm, respectively. Widely used eutectic 63Sn37Pb and lead-free 95.5Sn3.8Ag0.7Cu solders were used to form the bumps. No solder bridging was observed between adjacent bumps, and the solder bumps exhibited good dimensional uniformity. The solder bump to aluminum (Al) pad bond integrity was found to be excellent, as evidenced by the high stress to failure. The failure mode is predominately Al pad lift-off indicating a robust solder bump-pad joint.

The Use of Precision Selective Area Milling for Failure Analysis of Flip-Chip Packages

2002 ◽  
Author(s):  
George F. Gaut
Keyword(s):  
Failure Analysis ◽  
Flip Chip ◽  
Solder Bump ◽  
Selective Area ◽  
Fill Material ◽  
Solder Bumps ◽  
Time Required

Abstract Access to the solder bump and under-fill material of flip-chip devices has presented a new problem for failure analysts. The under-fill and solder bumps have also added a new source for failure causes. A new tool has become available that can reduce the time required to analyze this area of a flip-chip package. By using precision selective area milling it is possible to remove material (die or PCB) that will allow other tools to expose the source of the failure.

Combine Nanoprobing Technique with Difference Analysis to Identify Nonvisual Failures

2006 ◽  
Author(s):  
Cha-Ming Shen ◽  
Tsan-Cheng Chuang ◽  
Jie-Fei Chang ◽  
Jin-Hong Chou
Keyword(s):  
Failure Mode ◽  
Failure Modes ◽  
Electrical Characteristic ◽  
The Novel ◽  
Difference Analysis ◽  
Original Idea ◽  
Deductive Method ◽  
Complete Measurement

Abstract This paper presents a novel deductive methodology, which is accomplished by applying difference analysis to nano-probing technique. In order to prove the novel methodology, the specimens with 90nm process and soft failures were chosen for the experiment. The objective is to overcome the difficulty in detecting non-visual, erratic, and complex failure modes. And the original idea of this deductive method is based on the complete measurement of electrical characteristic by nano-probing and difference analysis. The capability to distinguish erratic and invisible defect was proven, even when the compound and complicated failure mode resulted in a puzzling characteristic.

Case Study and Fault Modeling for Wrong Redundancy Evaluation on DRAM Devices

2007 ◽  
Author(s):  
Martin Versen ◽  
Dorina Diaconescu ◽  
Jerome Touzel
Keyword(s):  
Failure Mode ◽  
Failure Modes ◽  
Fault Modeling ◽  
Mode Analysis ◽  
Root Cause ◽  
Failure Mode Analysis

Abstract The characterization of failure modes of DRAM is often straight forward if array related hard failures with specific addresses for localization are concerned. The paper presents a case study of a bitline oriented failure mode connected to a redundancy evaluation in the DRAM periphery. The failure mode analysis and fault modeling focus both on the root-cause and on the test aspects of the problem.

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