3D Packaging- Synthetic Quartz Substrate and Interposer for High Frequency Applications

2013 ◽  
Vol 2013 (DPC) ◽  
pp. 000729-000750
Author(s):  
Vern Stygar ◽  
Tim Mobley ◽  
Shintarou Takahashi
Keyword(s):  
Quartz Substrate ◽  
Low Cost ◽  
Video On Demand ◽  
Low Noise ◽  
Handheld Devices ◽  
Low Noise Amplifiers ◽  
Battery Life ◽  
Next Generation ◽  
Wafer Level ◽  
Communication Devices

Glass for use as an Interposers with through vias (TGV) are emerging as the next generation substrates for die level and wafer level packaging substrates. This need is being driven increasing number of interconnects, desire to have a KGD (known good die) at the wafer level package (WLP), high electrical/thermal conductivity vias, and hermeticity between the PWB and the die, while being cost competitive with a TSV passive interposer. These TGV characteristics translate to longer battery life, higher yield at the end user applications, and an optimized WLP solution that not require silicon processing foundries to fabricate a passive interposer. The next generation of communication devices will operate at much higher frequencies to allow video on demand and video vis a vis communication. Coupled with multiple frequencies, to facilitate a phone to work with GSM, CDMA and other communication schemes require multiple filter and low noise amplifiers. This paper will describe work done with Alkali free, copper filled (not plated) hermetic vias that are both low cost and provide engineering design flexibility for the more advance low cost personal handheld devices.

METAMORPHIC LOW NOISE AMPLIFIERS AND OPTICAL COMPONENTS

2003 ◽  
Vol 13 (01) ◽  
pp. 65-89 ◽  
Author(s):  
C. S. WHELAN ◽  
P. F. MARSH ◽  
R. E. LEONI ◽  
W. E. HOKE ◽  
S. M. LARDIZABAL ◽  
...  
Keyword(s):  
Low Cost ◽  
Indium Content ◽  
Low Noise ◽  
Superior Performance ◽  
Low Noise Amplifiers ◽  
Time To Failure ◽  
Active Device ◽  
Lattice Matching ◽  
High Indium Content ◽  
The Cost

GaAs based metamorphic HEMT (MHEMT) technology has emerged as an attractive, low cost alternative to InP HEMTs. The strain-induced imperfections caused by high indium content layers on GaAs is eliminated in metamorphic devices by providing a properly grown lattice-matching buffer between the substrate and active device layers. With this limitation overcome, it is now possible to provide the superior performance of InP-based devices with the cost advantages of highly manufacturable 4- and 6-inch GaAs wafers that can easily be integrated on existing GaAs fabrication lines. This paper will review device performance as well as state-of-the-art low noise amplifiers fabricated with this technology operating from 1 to 100 GHz. Fiber optic receiver components such as 40 Gb/s optical-to-electrical photodiodes and traveling wave amplifiers fabricated metamorphically will also be discussed. Finally, device and circuit reliability data will be presented demonstrating median-time-to-failure of more than 30 years at 125 C.

scholarly journals Study of Linearity and Power Consumption Requirements of CMOS Low Noise Amplifiers in Context of LTE Systems and Beyond

2014 ◽  
Vol 2014 ◽  
pp. 1-11 ◽  
Author(s):  
Grzegorz Szczepkowski ◽  
Ronan Farrell
Keyword(s):  
Power Consumption ◽  
Antenna Arrays ◽  
Noise Figure ◽  
Low Noise ◽  
Base Stations ◽  
Small Cells ◽  
Handheld Devices ◽  
Low Noise Amplifiers ◽  
Budget Planning

This paper presents a study of linearity in wideband CMOS low noise amplifiers (LNA) and its relationship to power consumption in context of Long Term Evolution (LTE) systems and its future developments. Using proposed figure of merit (FoM) to compare 35 state-of-the-art LNA circuits published over the last decade, the paper explores a dependence between amplifier performance (i.e., combined linearity, noise figure, and gain) and power consumption. In order to satisfy stringent linearity specifications for LTE standard (and its likely successors), the paper predicts that LNA FoM increase in the range of +0.2 dB/mW is expected and will inevitably translate into a significant increase in power consumption—a critical budget planning aspect for handheld devices, active antenna arrays, and base stations operating in small cells.

scholarly journals A Compact Size Wideband RF-VGA Based on Second Generation Controlled Current Conveyors

Electronics ◽  
2020 ◽  
Vol 9 (10) ◽  
pp. 1600
Author(s):  
J. del Pino ◽  
Sunil L. Khemchandani ◽  
D. Galante-Sempere ◽  
C. Luján-Martínez
Keyword(s):  
Power Consumption ◽  
Second Generation ◽  
Low Cost ◽  
Low Frequency ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Current Conveyors ◽  
Compact Size ◽  
Sige Bicmos ◽  
Controlled Current Conveyors

This paper presents a methodology to design a wideband radio frequency variable gain amplifier (RF-VGA) in a low-cost SiGe BiCMOS 0.35 μm process. The circuit uses two Class A amplifiers based on second-generation controlled current conveyors (CCCII). The main feature of this circuit is the wideband input match along with a reduced NF (5.5–9.6 dB) and, to the authors’ knowledge, the lowest die footprint reported (62 × 44 μm2 area). The implementation of the RF-VGA based on CCCII allows a wideband input match without the need of passive elements. Due to the nature of the circuit, when the gain is increased, the power consumption is reduced. The architecture is suitable for designing wideband, low-power, and low-noise amplifiers. The proposed design achieves a tunable gain of 6.7–18 dB and a power consumption of 1.7 mA with a ±1.5 V DC supply. At maximum gain, the proposed RF-VGA covers from DC up to 1 GHz and can find application in software design radios (SDRs), the low frequency medical implant communication system (MICS) or industrial, scientific, and medical (ISM) bands.

Next Generation eWLB (Embedded Wafer Level BGA): Advanced 3D SiP Packaging Solution

2012 ◽  
Vol 2012 (DPC) ◽  
pp. 001507-001526 ◽  
Author(s):  
Seung Wook Yoon ◽  
Yaojian Lin ◽  
Yonggang Jin ◽  
Jerome Teysseyre ◽  
Xavier Baraton ◽  
...  
Keyword(s):  
Low Cost ◽  
Standard Test ◽  
Structural Defects ◽  
Special Focus ◽  
Next Generation ◽  
Wafer Level ◽  
Process Technology ◽  
Component Level ◽  
Chip Area ◽  
Board Level

Current and future demands of mobile/portable electronic systems in terms of performance, power consumption, reliable system at a reasonable price are met by developing advanced/appropriate silicon process technology, innovative packaging solutions with use of chip-package-system co-design, low cost materials, advanced assembly and reliable interconnect technologies. In this article packaging evolution for hand held application is discussed with special focus on next generation chip embedding technology called eWLB in detail. To meet the above said challenges eWLB was developed which offers additional space for routing higher I/O chips on top of Silicon chip area which is not possible in conventional WLP or WLB. It also offers comparatively better electrical, thermal and reliability performance at reduced cost with possibility to address more Moore [decreasing technology nodes with low-k dielectrics in SoC] and more than Moore [heterogeneous integration of chips with different wafer technology as SiP solution in multi die or 3D eWLB approaches]. Currently 1st generation eWLB technology is available in the industry with 200mm and 300mm carrier size. This paper will highlight some of the recent advancements in progress development and mechnical characterization in component level and board level reliaiblity of next generation eWLB technologies of double-side 3D eWLB. Standard JEDEC tests were carried out to investigate component level reliability and both destructive/non-destructive analysis was performed to investigate potential structural defects. Daisychain Test vehicles were prepared and also tested for drop and TcoB (Temperature on Board) reliaiblity in industry standard test conditions. There was significant improvement of characteristic lifetime with thined eWLB in TcoB performance because of its enhanced flexibility of package. And there was study of board level reliabiilty with underfill in SMT for large size eWLB packages. This paper will also present study of package warpage behavior with temperature profile as well as failure analysis with microsturctural observation for comprehensive understanding of mechanical behavior of next generation eWLBs.

A Radiotelescope for Undergraduate Teaching

1993 ◽  
Vol 10 (3) ◽  
pp. 225-228 ◽  
Author(s):  
J.W.V. Storey ◽  
J.P. Lloyd
Keyword(s):  
Low Cost ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
Undergraduate Teaching ◽  
The Moon ◽  
Excellent Performance ◽  
Satellite Television ◽  
Computer Controlled ◽  
Feed Horns ◽  
Galactic Sources

AbstractA fully-steerable 3.7 metre radiotelescope has been developed as an aid to undergraduate teaching. By using commercially available domestic satellite television components, excellent performance can be achieved at very low cost. The telescope is to be fully computer controlled, and has interchangeable feed horns and low-noise amplifiers for 21 cm, 2.5 cm and 7.5 cm. Experiments will include measurement of the surface temperature of the moon and Venus and of the effective temperature of the sun, plus observation of the brightest thermal and non-thermal galactic sources.

Hardware efficient receiver for low-cost ultra-high rate 60 GHz wireless communications

2011 ◽  
Vol 3 (2) ◽  
pp. 121-129 ◽  
Author(s):  
Ahmet Çağrı Ulusoy ◽  
Gang Liu ◽  
Andreas Trasser ◽  
Hermann Schumacher
Keyword(s):  
Communication Systems ◽  
High Speed ◽  
Low Cost ◽  
Intermediate Frequency ◽  
Low Noise ◽  
High Rate ◽  
Low Noise Amplifiers ◽  
Range Data ◽  
60 Ghz ◽  
5 Ghz

This paper presents a hardware efficient receiver architecture, to be used in low-cost, ultra-high rate 60 GHz wireless communication systems. The receiver utilizes a simple, feed-forward carrier recovery concept, performing phase and frequency synchronization in the analog domain. This enables 1-bit baseband processing without a need of ultra-high speed and high precision analog-to-digital conversion, offering a strong simplification of the system architecture and comparatively low power consumption. In a first prototype implementation, the receiver is realized in a low-cost SiGe technology as two separate ICs: the 60 GHz/5 GHz downconverter, and the intermediate frequency synchronous demodulator. The simple synchronous reception concept is experimentally validated for up to 3.5 Gbit/s data rate, which constituted the limit of the existing experimental setup. Furthermore, the downconverter demonstrates that low-cost technologies (fop/fmax ~ 0.75) can be used to realize short-range data links at 60 GHz, with low-noise amplifiers in a more performant technology as needed.

scholarly journals Ultra-Wideband Low Noise Amplifiers For The Next Generation Very Large Array

2019 ◽  
Author(s):  
Jose E. Velazco ◽  
Luis Ledezma ◽  
James Bowen ◽  
Lorene Samoska ◽  
Melissa Soriano ◽  
...  
Keyword(s):  
Low Noise ◽  
Ultra Wideband ◽  
Low Noise Amplifiers ◽  
Large Array ◽  
Next Generation ◽  
Very Large Array

Low-Cost Testing of 5 GHz Low Noise Amplifiers Using New RF BIST Circuit

2005 ◽  
Vol 21 (6) ◽  
pp. 571-581 ◽  
Author(s):  
Jee-Youl Ryu ◽  
Bruce C. Kim
Keyword(s):  
Low Cost ◽  
Low Noise ◽  
Low Noise Amplifiers ◽  
5 Ghz
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