3D-IC Integration Using D2C or D2W Alignment Schemes Together with Local Oxide Reduction

2011 ◽  
Vol 2011 (DPC) ◽  
pp. 001291-001315
Author(s):  
Gilbert Lecarpentier ◽  
Jean-Stephane Mottet ◽  
Keith Cooper ◽  
Michael Stead
Keyword(s):  
Integrated Circuits ◽  
High Density ◽  
Oxide Reduction ◽  
3D Ic ◽  
3 Dimensional ◽  
Temperature Requirements

3-Dimensional interconnection of high density integrated circuits enables building devices with greater functionality with higher performances in a smaller space. This paper explores the chip-to-chip and chip-to-wafer alignment and the associated bonding techniques such as in-situ reflow or thermocompression with a local oxide reduction which contributes to higher yield together with reduction of the force or temperature requirements.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

scholarly journals Millisecond lattice gasification for high-density CO2- and O2-sieving nanopores in single-layer graphene

2021 ◽  
Vol 7 (9) ◽  
pp. eabf0116
Author(s):  
Shiqi Huang ◽  
Shaoxian Li ◽  
Luis Francisco Villalobos ◽  
Mostapha Dakhchoune ◽  
Marina Micari ◽  
...  
Keyword(s):  
Single Layer ◽  
High Density ◽  
Single Layer Graphene ◽  
Pore Density ◽  
Vacancy Defects ◽  
Carbon Gasification ◽  
Layer Graphene ◽  
Gas Molecules ◽  
Good Agreement

Etching single-layer graphene to incorporate a high pore density with sub-angstrom precision in molecular differentiation is critical to realize the promising high-flux separation of similar-sized gas molecules, e.g., CO2 from N2. However, rapid etching kinetics needed to achieve the high pore density is challenging to control for such precision. Here, we report a millisecond carbon gasification chemistry incorporating high density (>1012 cm−2) of functional oxygen clusters that then evolve in CO2-sieving vacancy defects under controlled and predictable gasification conditions. A statistical distribution of nanopore lattice isomers is observed, in good agreement with the theoretical solution to the isomer cataloging problem. The gasification technique is scalable, and a centimeter-scale membrane is demonstrated. Last, molecular cutoff could be adjusted by 0.1 Å by in situ expansion of the vacancy defects in an O2 atmosphere. Large CO2 and O2 permeances (>10,000 and 1000 GPU, respectively) are demonstrated accompanying attractive CO2/N2 and O2/N2 selectivities.

scholarly journals A cookbook for DNase Hi-C

2021 ◽  
Vol 14 (1) ◽  
Author(s):  
Maria Gridina ◽  
Evgeniy Mozheiko ◽  
Emil Valeev ◽  
Ludmila P. Nazarenko ◽  
Maria E. Lopatkina ◽  
...  
Keyword(s):  
Rational Design ◽  
Restriction Enzymes ◽  
Nucleotide Exchange ◽  
Computational Tools ◽  
3 Dimensional ◽  
Cultured Human Cells ◽  
Dna Ends ◽  
By Products ◽  
Robust Protocol

Abstract Background The Hi-C technique is widely employed to study the 3-dimensional chromatin architecture and to assemble genomes. The conventional in situ Hi-C protocol employs restriction enzymes to digest chromatin, which results in nonuniform genomic coverage. Using sequence-agnostic restriction enzymes, such as DNAse I, could help to overcome this limitation. Results In this study, we compare different DNAse Hi-C protocols and identify the critical steps that significantly affect the efficiency of the protocol. In particular, we show that the SDS quenching strategy strongly affects subsequent chromatin digestion. The presence of biotinylated oligonucleotide adapters may lead to ligase reaction by-products, which can be avoided by rational design of the adapter sequences. Moreover, the use of nucleotide-exchange enzymes for biotin fill-in enables simultaneous labelling and repair of DNA ends, similar to the conventional Hi-C protocol. These improvements simplify the protocol, making it less expensive and time-consuming. Conclusions We propose a new robust protocol for the preparation of DNAse Hi-C libraries from cultured human cells and blood samples supplemented with experimental controls and computational tools for the evaluation of library quality.

scholarly journals A Brief Overview of On-Chip Voltage Regulation in High-Performance and High-Density Integrated Circuits

IEEE Access ◽  
2021 ◽  
Vol 9 ◽  
pp. 813-826
Author(s):  
Farid Uddin Ahmed ◽  
Zarin Tasnim Sandhie ◽  
Liaquat Ali ◽  
Masud H. Chowdhury
Keyword(s):  
Integrated Circuits ◽  
High Performance ◽  
Voltage Regulation ◽  
High Density ◽  
On Chip

scholarly journals Optimization of spaceflight millimeter-wave impedance matching networks using laser trimming

2021 ◽  
pp. 1-7
Author(s):  
K. Parow-Souchon ◽  
D. Cuadrado-Calle ◽  
S. Rea ◽  
M. Henry ◽  
M. Merritt ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Millimeter Wave ◽  
Impedance Matching ◽  
Wave Impedance ◽  
Low Noise ◽  
Device Performance ◽  
Interface Circuits ◽  
Interface Circuit ◽  
Noise Amplifier

Abstract Realizing packaged state-of-the-art performance of monolithic microwave integrated circuits (MMICs) operating at millimeter wavelengths presents significant challenges in terms of electrical interface circuitry and physical construction. For instance, even with the aid of modern electromagnetic simulation tools, modeling the interaction between the MMIC and its package embedding circuit can lack the necessary precision to achieve optimum device performance. Physical implementation also introduces inaccuracies and requires iterative interface component substitution that can produce variable results, is invasive and risks damaging the MMIC. This paper describes a novel method for in situ optimization of packaged millimeter-wave devices using a pulsed ultraviolet laser to remove pre-selected areas of interface circuit metallization. The method was successfully demonstrated through the optimization of a 183 GHz low noise amplifier destined for use on the MetOp-SG meteorological satellite series. An improvement in amplifier output return loss from an average of 12.9 dB to 22.7 dB was achieved across an operational frequency range of 175–191 GHz and the improved circuit reproduced. We believe that our in situ tuning technique can be applied more widely to planar millimeter-wave interface circuits that are critical in achieving optimum device performance.

In Situ Phosphine Oxide Reduction: A Catalytic Appel Reaction

2011 ◽  
Vol 17 (40) ◽  
pp. 11290-11295 ◽  
Author(s):  
Henri A. van Kalkeren ◽  
Stefan H. A. M. Leenders ◽  
C. Rianne A. Hommersom ◽  
Floris P. J. T. Rutjes ◽  
Floris L. van Delft
Keyword(s):  
Phosphine Oxide ◽  
Oxide Reduction

Development of heavyweight aggregate via in-situ growth of high density ceramics using red mud

2021 ◽  
Vol 313 ◽  
pp. 125376
Author(s):  
Ashutosh Singh Raghubanshi ◽  
Manish Mudgal ◽  
Anil Kumar ◽  
R.K. Chouhan ◽  
Avanish Kumar Srivastava
Keyword(s):  
Red Mud ◽  
High Density ◽  
In Situ Growth

In situ surface oxide reduction with pulsed arc discharge for maximum adhesion of diamond-like carbon coatings

2008 ◽  
Vol 17 (12) ◽  
pp. 2071-2074 ◽  
Author(s):  
Veli-Matti Tiainen ◽  
Antti Soininen ◽  
Esa Alakoski ◽  
Yrjö T. Konttinen
Keyword(s):  
Arc Discharge ◽  
Surface Oxide ◽  
Diamond Like Carbon ◽  
Oxide Reduction ◽  
Carbon Coatings ◽  
Pulsed Arc Discharge ◽  
Pulsed Arc
Sign in / Sign up

Export Citation Format

Share Document