scholarly journals Conjugated Quantum Dots Inhibit the Amyloidβ(1–42) Fibrillation Process

2011 ◽  
Vol 2011 ◽  
pp. 1-15 ◽  
Author(s):  
Garima Thakur ◽  
Miodrag Micic ◽  
Yuehai Yang ◽  
Wenzhi Li ◽  
Dania Movia ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Dots ◽  
Atomic Force Microscopy ◽  
Amyloid Beta ◽  
Dihydrolipoic Acid ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Tht Fluorescence

Nanoparticles have enormous potential in diagnostic and therapeutic studies. We have demonstrated that the amyloid beta mixed with and conjugated to dihydrolipoic acid- (DHLA) capped CdSe/ZnS quantum dots (QDs) of size approximately 2.5 nm can be used to reduce the fibrillation process. Transmission electron microscopy (TEM) and atomic force microscopy (AFM) were used as tools for analysis of fibrillation. There is a significant change in morphology of fibrils when amyloidβ(1–42) (Aβ(1–42)) is mixed or conjugated to the QDs. The length and the width of the fibrils vary under modified conditions. Thioflavin T (ThT) fluorescence supports the decrease in fibril formation in presence of DHLA-capped QDs.

Ordering of InGaAs Quantum Dots Grown by Molecular Beam Epitaxy under As2 gas flux

2015 ◽  
Vol 1792 ◽  
Author(s):  
Mourad Benamara ◽  
Yuriy I. Mazur ◽  
Peter Lytvyn ◽  
Morgan E. Ware ◽  
Vitaliy Dorogan ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Quantum Dots ◽  
Atomic Force Microscopy ◽  
Molecular Beam Epitaxy ◽  
Large Scale ◽  
Molecular Beam ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

ABSTRACTThe influence of the substrate temperature on the morphology and ordering of InGaAs quantum dots (QD), grown on GaAs (001) wafers by Molecular Beam Epitaxy (MBE) under As2 flux has been studied using Transmission Electron Microscopy (TEM), Atomic Force Microscopy (AFM) and Photoluminescence (PL) measurements. The experimental results show that lateral and vertical orderings occur for temperatures greater than 520°C and that QDs self-organize in a 6-fold symmetry network on (001) surface for T=555°C. Vertical orderings of asymmetric QDs, along directions a few degrees off [001], are observed on a large scale and their formation is discussed.

Defect-Engineered Graded GexSi1-x Buffers on Si (001) with Extreme Low Threading Dislocation Density

1995 ◽  
Vol 378 ◽  
Author(s):  
G. Kissinger ◽  
T. Morgenstern ◽  
G. Morgenstern ◽  
H. B. Erzgräber ◽  
H. Richter
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Atomic Force Microscopy ◽  
Dislocation Density ◽  
Threading Dislocation ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Dislocation Densities ◽  
Threading Dislocation Density

AbstractStepwise equilibrated graded GexSii-x (x≤0.2) buffers with threading dislocation densities between 102 and 103 cm−2 on the whole area of 4 inch silicon wafers were grown and studied by transmission electron microscopy, defect etching, atomic force microscopy and photoluminescence spectroscopy.

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