Renaissance of Ferroelectric Memories: Can They Be a Game-changer?

2021 ◽  
Vol 30 (9) ◽  
pp. 16-23
Author(s):  
Min Hyuk PARK
Keyword(s):  
Thin Film ◽  
Material Properties ◽  
Semiconductor Devices ◽  
Ferroelectric Materials ◽  
Scaling Down ◽  
Ferroelectric Memories ◽  
Game Changer

Ferroelectric memories have been studied for ∼60 years since their first suggestion in 1952. The material properties of ferroelectrics are considered ideal for universal memories with the availability of electrical program/erase and read processes. However, challenges in the physical scaling down of bulk ferroelectric materials were a critical hurdle for the success of ferroelectric materials. In 2011, ferroelectricity in HfO2-based thin film was first reported, and this unexpected discovery revived research on ferroelectric memories. In this review, the properties, history, and applications of HfO2-based ferroelectrics are reviewed, and a perspective on semiconductor devices based on them is provided.

scholarly journals Ferroelectric HfO2-based materials for next-generation ferroelectric memories

2016 ◽  
Vol 06 (02) ◽  
pp. 1630003 ◽  
Author(s):  
Zhen Fan ◽  
Jingsheng Chen ◽  
John Wang
Keyword(s):  
Random Access ◽  
Complementary Metal Oxide Semiconductor ◽  
Ferroelectric Materials ◽  
Oxide Semiconductor ◽  
Next Generation ◽  
New Class ◽  
Generation Cost ◽  
Potential Applications ◽  
Cost Efficient ◽  
Ferroelectric Memories

Ferroelectric random access memory (FeRAM) based on conventional ferroelectric perovskites, such as Pb(Zr,Ti)O3 and SrBi2Ta2O9, has encountered bottlenecks on memory density and cost, because those conventional perovskites suffer from various issues mainly including poor complementary metal-oxide-semiconductor (CMOS)-compatibility and limited scalability. Next-generation cost-efficient, high-density FeRAM shall therefore rely on a material revolution. Since the discovery of ferroelectricity in Si:HfO2 thin films in 2011, HfO2-based materials have aroused widespread interest in the field of FeRAM, because they are CMOS-compatible and can exhibit robust ferroelectricity even when the film thickness is scaled down to below 10 nm. A review on this new class of ferroelectric materials is therefore of great interest. In this paper, the most appealing topics about ferroelectric HfO2-based materials including origins of ferroelectricity, advantageous material properties, and current and potential applications in FeRAM, are briefly reviewed.

Nanostructured SnS with inherent anisotropic optical properties for high photoactivity

Nanoscale ◽  
2016 ◽  
Vol 8 (4) ◽  
pp. 2293-2303 ◽  
Author(s):  
Malkeshkumar Patel ◽  
Arvind Chavda ◽  
Indrajit Mukhopadhyay ◽  
Joondong Kim ◽  
Abhijit Ray
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Solar Energy ◽  
Material Properties ◽  
Chemical Spray Pyrolysis ◽  
Solar Energy Material ◽  
Energy Material ◽  
Chemical Spray ◽  
2D Structure ◽  
Film Synthesis

Tin(ii) sulfide is a fascinating solar energy material due to its anisotropic material properties. In this manuscript, we report on exploiting the 2D structure modulated optical properties of nanocrystalline SnS thin film synthesis by chemical spray pyrolysis using ambient transport in the harvesting of solar energy.

Experimental Measurement and Analysis of Microelectronics Application Polymer Materials Properties

1992 ◽  
Vol 264 ◽  
Author(s):  
Y.H. Jeng ◽  
Mirng-Ji Lii
Keyword(s):  
Thin Film ◽  
Material Properties ◽  
Silicon Substrate ◽  
Coupling Effect ◽  
Measurement Techniques ◽  
Epoxy Adhesive ◽  
Polymer Materials ◽  
Fea Model ◽  
Curvature Measurement ◽  
Substrate Curvature

AbstractA laser based surface scanning technique was utilized to measure the polyimide coated silicon wafer curvature resulting from thermal cycling and mismatch, Meanwhile, mechanical properties of polyimide thin film were characterized by DMA, TMA and tensile test. Based on the obtained material properties, A FEA model was developed to analyze the experimental results -reasonable correlation was obtained.Similar approaches were taken one step further in the MCM silicon substrate curvature measurement. In a MCM package with silicon substrate, epoxy adhesive, and ceramic package, substrate warpage was developed in a thermal cycle due to thermal mismatch between the substrate and the package and coupling effect linked by epoxy adhesive. Three different substrate curvature measurement techniques were applied to identify the substrate curvature and epoxy thin film properties were also well characterized. A 3D FEA model incorporating with the epoxy material properties was developed to analyze the substrate warpage and investigate an optimal package design.

scholarly journals Benefits of on-wafer calibration standards fabricated in membrane technology

2011 ◽  
Vol 9 ◽  
pp. 19-26
Author(s):  
M. Rohland ◽  
U. Arz ◽  
S. Büttgenbach
Keyword(s):  
Thin Film ◽  
Monte Carlo ◽  
Electrical Properties ◽  
Monte Carlo Simulations ◽  
Material Properties ◽  
Membrane Technology ◽  
Coplanar Waveguides ◽  
Calibration Standards ◽  
Electromagnetic Waveguide ◽  
Propagation Of Uncertainties

Abstract. In this work we compare on-wafer calibration standards fabricated in membrane technology with standards built in conventional thin-film technology. We perform this comparison by investigating the propagation of uncertainties in the geometry and material properties to the broadband electrical properties of the standards. For coplanar waveguides used as line standards the analysis based on Monte Carlo simulations demonstrates an up to tenfold reduction in uncertainty depending on the electromagnetic waveguide property we look at.

scholarly journals Photo-Sensitizing Thin-Film Ferroelectric Oxides Using Materials Databases and High-Throughput Calculations

2019 ◽  
Author(s):  
Jose J Plata ◽  
Javier Amaya Suárez ◽  
Santiago Cuesta-López ◽  
Antonio Marquez ◽  
Javier Fdez. Sanz
Keyword(s):  
Thin Film ◽  
High Throughput ◽  
Photovoltaic Effect ◽  
Electric Polarization ◽  
Ferroelectric Materials ◽  
Band Alignment ◽  
Band Gaps ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Ferroelectric Oxides

<div> <div> <div> <p>Conventional solar cell efficiency is usually limited by the Shockley-Queisser limit. This is not the case, however, for ferroelectric materials, which present a spontaneous electric polarization that is responsible for their bulk photovoltaic effect. Even so, most ferroelectric oxides exhibit large band gaps, reducing the amount of solar energy that can be harvested. In this work, a high-throughput approach to tune the electronic properties of thin-film ferroelectric oxides is presented. Materials databases were systematically used to find substrates for the epitaxial growth of KNbO3 thin-films, using topological and stability filters. Interface models were built and their electronic and optical properties were predicted. Strain and substrate-thin-film band interaction effects were examined in detail, in order to understand the interaction between both materials. We found substrates that significantly reduce the KNbO3 band gap, maintain KNbO3 polarization, and potentially present the right band alignment, favoring the electron injection in the substrate/electrode. This methodology can be easily applied to other ferroelectric oxides, optimizing their band gaps and accelerating the development of new ferroelectric-based solar cells. </p> </div> </div> </div>

1/f Noise in amorphous silicon thin film transistors: effect of scaling down

1999 ◽  
Vol 43 (4) ◽  
pp. 713-721 ◽  
Author(s):  
J Rhayem ◽  
D Rigaud ◽  
M Valenza ◽  
N Szydlo ◽  
H Lebrun
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Silicon Thin Film ◽  
Scaling Down
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