Research on a Next-generation Power Semiconductor: a GaN HFET Power Switching Device

2015 ◽  
Vol 65 (1) ◽  
pp. 1-13 ◽  
Author(s):  
Seung Yup JANG* ◽  
Sung-Woon MOON ◽  
Jinhong PARK
Keyword(s):  
Next Generation ◽  
Power Switching ◽  
Switching Device ◽  
Power Semiconductor ◽  
Gan Hfet ◽  
Generation Power

207 Thermal Deformation Mechanism of Ceramic Substrate for Next-generation Power Semiconductor Modules

2015 ◽  
Vol 2015.23 (0) ◽  
pp. 109-110
Author(s):  
Yu HARUBEPPU ◽  
Hisashi TANIE ◽  
Koji SASAKI ◽  
Nobuhiko CHIWATA ◽  
Hiroyuki TESHIMA
Keyword(s):  
Deformation Mechanism ◽  
Thermal Deformation ◽  
Ceramic Substrate ◽  
Next Generation ◽  
Power Semiconductor ◽  
Generation Power

Nanoparticle/solder hybrid joints for next-generation power semiconductor modules

2017 ◽  
Vol 124 ◽  
pp. 203-210 ◽  
Author(s):  
Toshikazu Satoh ◽  
Toshitaka Ishizaki ◽  
Masanori Usui
Keyword(s):  
Next Generation ◽  
Power Semiconductor ◽  
Hybrid Joints ◽  
Generation Power

Reliability Performance of 1200 V and 1700 V 4H-SiC DMOSFETs for Next Generation Power Conversion Applications

2014 ◽  
Vol 778-780 ◽  
pp. 967-970 ◽  
Author(s):  
Donald A. Gajewski ◽  
Sei Hyung Ryu ◽  
Mrinal Das ◽  
Brett Hull ◽  
Jonathan Young ◽  
...  
Keyword(s):  
Wide Bandgap ◽  
Large Sample Size ◽  
Next Generation ◽  
Process Technology ◽  
Power Switching ◽  
Comprehensive Reliability ◽  
Reliability Performance ◽  
Acceptance Tests ◽  
Frequency Power

We present new reliability results on the Cree, Inc., 4H-SiC, DMOSFET devices. The Cree DMOSFETs were developed to meet the demand of next-generation, high-frequency power switching applications, such as: dc-ac inversion, dc-dc conversion, and ac-dc rectification, with continually improving energy efficiency. The Cree Generation 2 DMOSFET process technology is now commercially available with 1200 V and 1700 V ratings. We have performed intrinsic reliability studies to ensure excellent wear-out performance and long field lifetime of the products. We have also performed large sample size qualification reliability acceptance tests to ensure the quality of the manufacturing and packaging processes. These comprehensive reliability studies establish new benchmarks for wide bandgap transistors and demonstrate that Crees MOSFETs meet or exceed all industrial reliability requirements. This achievement facilitates broad market adoption of this disruptive power switch technology.

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