scholarly journals Study on amorphous silicon thin film by aluminum-induced crystallization

2011 ◽  
Vol 18 ◽  
pp. 77-80 ◽  
Author(s):  
Minghua Li ◽  
Yong Liu ◽  
Yanghuan Lin ◽  
Xiaofeng Guo ◽  
Ruijiang Hong ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Silicon Thin Film ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

Thin-film polycrystalline-silicon solar cells on high-temperature glass based on aluminum-induced crystallization of amorphous silicon

2006 ◽  
Vol 910 ◽  
Author(s):  
Dries Van Gestel ◽  
Ivan Gordon ◽  
Lode Carnel ◽  
Linda R. Pinckney ◽  
Alexandre Mayolet ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Temperature ◽  
Amorphous Silicon ◽  
Polycrystalline Silicon ◽  
Open Circuit ◽  
Si Solar Cells ◽  
Induced Crystallization ◽  
Seed Layers ◽  
Aluminum Induced Crystallization

AbstractEfficient thin-film polycrystalline-silicon (pc-Si) solar cells on foreign substrates could lower the price of photovoltaic electricity. Aluminum-induced crystallization (AIC) of amorphous silicon followed by epitaxial thickening at high temperatures seems a good way to obtain efficient pc-Si solar cells. Due to its transparency and low cost, glass is well suited as substrate for pc-Si cells. However, most glass substrates do not withstand temperatures around 1000°C that are needed for high-temperature epitaxial growth. In this paper we investigate the use of experimental transparent glass-ceramics with high strain-point temperatures as substrates for pc-Si solar cells. AIC seed layers made on these substrates showed in-plane grain sizes up to 16 μm. Columnar growth was observed on these seed layers during high-temperature epitaxy. First pc-Si solar cells made on glass-ceramic substrates in substrate configuration showed efficiencies up to 4.5%, fill factors up to 75% and open-circuit voltage (Voc) values up to 536 mV. This is the highest Voc reported for pc-Si solar cells on glass and the best cell efficiency reported for cells made by AIC on glass.

Epitaxial Silicon Thin Films by Low Temperature Aluminum Induced Crystallization of Amorphous Silicon

2006 ◽  
Vol 910 ◽  
Author(s):  
Khalil Sharif ◽  
Husam H. Abu-Safe ◽  
Hameed A. Naseem ◽  
William D. Brown ◽  
Mowafak Al-Jassim ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Amorphous Silicon ◽  
Crystalline Silicon ◽  
Chemical Vapor Deposition Method ◽  
Diffraction Spectrum ◽  
Epitaxial Silicon ◽  
Silicon Thin Film ◽  
Cross Sectional ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

AbstractEpitaxial silicon thin film growth has been achieved on crystalline silicon substrates using aluminum induced crystallization of amorphous silicon. The phenomenon of layer inversion has been utilized in this process. Silicon wafers <100> were used as the starting crystalline structure for the grown films. After the wafer is cleaned a thin layer of aluminum (300 nm) was deposited by sputtering. This deposition was followed by 300 nm film of amorphous silicon deposited using plasma enhanced chemical vapor deposition method. After annealing the samples for 40 minutes at 525 °C, a continuous film of silicon was formed on the silicon substrate. X-ray diffraction spectrum indicated that this film has the same orientation as that of the substrate. Scanning electron microscopy cross section images showed indistinguishable interface between the substrate and the crystallized film. Cross sectional transmission electron microscopy studies of the crystallized structure showed epitaxial nature of the films.

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