Magneto-transport properties of Fe thin films in an external electric field

2013 ◽  
Vol 63 (3) ◽  
pp. 612-615 ◽  
Author(s):  
K. Nakamura ◽  
T. Akiyama ◽  
T. Ito ◽  
M. Weinert ◽  
A. J. Freeman
2012 ◽  
Vol 225 ◽  
pp. 727-731 ◽  
Author(s):  
T. Frömling ◽  
H. Hutter ◽  
C. Leach ◽  
N.K. Ali ◽  
K. Reichmann ◽  
...  

1996 ◽  
Vol 69 (5) ◽  
pp. 632-634 ◽  
Author(s):  
Yoshiko Niki Kunishima ◽  
Masaru Miyayama ◽  
Hiroaki Yanagida

2018 ◽  
Vol 32 (03) ◽  
pp. 1850016
Author(s):  
Yun-Lei Sun ◽  
En-Jia Ye

In this work, we theoretically study the linear AC transport properties in T-stub and crossed zigzag silicene nanosystems. The DC conductance and AC emittance are numerically calculated based on the tight-binding approach and AC transport theory, by considering the nearest-neighbor hopping, second-nearest-neighbor spin-orbit interaction (SOI) and external electric field. The relatively strong SOI of silicene was demonstrated to induce a topological quantum edge state in the nanosystems by the local density of states, which eliminates the AC emittance response at the Dirac point. Further investigations suggest that the SOI-induced AC transport is topologically protected from the changes of geometrical size. Moreover, the AC transport properties of these nanosystems can be tuned by the external electric field, which would open an energy gap and destroy the topological quantum state, making them trivial band insulators.


Author(s):  
Sudhakar Narra ◽  
Shuo‐En Tsai ◽  
Kamlesh Awasthi ◽  
Shailesh Rana ◽  
Eric Wei‐Guang Diau ◽  
...  

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