Effect of misfit strain and external electric field on dielectric behavior of epitaxial SrTiO3 thin films

2005 ◽  
Vol 97 (6) ◽  
pp. 064109 ◽  
Author(s):  
Yan-Hong Gao ◽  
Hai-Xia Cao ◽  
Qing Jiang
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
External Electric Field ◽  
Misfit Strain ◽  
Dielectric Behavior

Effects of the external electric field from a substrate on Cl2 gas adsorption on SnO2 thin films

1996 ◽  
Vol 69 (5) ◽  
pp. 632-634 ◽  
Author(s):  
Yoshiko Niki Kunishima ◽  
Masaru Miyayama ◽  
Hiroaki Yanagida
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
External Electric Field ◽  
Gas Adsorption ◽  
Sno2 Thin Films

ENHANCED DIELECTRIC CHARACTERISTICS OF MANGANESE-DOPED BZT THIN FILMS

2008 ◽  
Vol 15 (01n02) ◽  
pp. 29-33 ◽  
Author(s):  
J. ZHU ◽  
W. J. JIE ◽  
X. H. WEI ◽  
W. F. QIN ◽  
Y. ZHANG ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Figure Of Merit ◽  
Growth Conditions ◽  
Dielectric Behavior ◽  
X Ray Diffraction ◽  
Dielectric Characteristics ◽  
Mn Doping ◽  
X Ray ◽  
Relationship Of

Ba ( Zr 0.2 Ti 0.8) O 3 (BZT) and 2 mol% Mn additional doped BZT ( Mn -BZT) thin films were deposited by pulsed laser deposition technique under the same growth conditions on LaAlO 3 substrates with the bottom electrodes of LaNiO 3. The microstructure of the films was characterized by X-ray diffraction (XRD) in the mode of θ–2θ scan and Φ-scan. The results indicated that BZT film was (001)-oriented_with an in-plane relationship of BZT[100]//LNO[100]//LAO[100]. The Mn -BZT film exhibited higher dielectric constant of 225 at zero electric field, larger dielectric tunability of 59.4%, and lower dielectric loss of 1.8% under an applied electric field of 720 kV/cm. The figure of merit for BZT thin film increased from 19.8 to 33 by Mn doping. The enhanced dielectric behavior by Mn doping could be mainly attributed to the decrease of oxygen vacancies and the reorientation of the dipolar defect complex of [Formula: see text].

Photoluminescence of P3HT : PCBM bulk heterojunction thin films and effect of external electric field

2021 ◽  
Author(s):  
Sudhakar Narra ◽  
Shuo‐En Tsai ◽  
Kamlesh Awasthi ◽  
Shailesh Rana ◽  
Eric Wei‐Guang Diau ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
External Electric Field ◽  
Bulk Heterojunction

A tunable thermal switching device based on Joule heating-induced metal–insulator transition in VO2 thin films via an external electric field

2019 ◽  
Vol 58 (SD) ◽  
pp. SDDE12
Author(s):  
Sukittaya Jessadaluk ◽  
Narathon Khemasiri ◽  
Prapakorn Rattanawarinchai ◽  
Sakon Rahong ◽  
Adirek Rangkasikorn ◽  
...  
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
External Electric Field ◽  
Joule Heating ◽  
Insulator Transition ◽  
Metal Insulator Transition ◽  
Metal Insulator ◽  
Switching Device ◽  
Thermal Switching ◽  
Vo2 Thin Films

Robustness of the electronic structure and charge transfer in topological insulator Bi2Te2Se and Bi2Se2Te thin films under an external electric field

2020 ◽  
Vol 22 (7) ◽  
pp. 3867-3874 ◽  
Author(s):  
Yurong Ruan ◽  
Lu Huang ◽  
Yanmin Yang ◽  
Guigui Xu ◽  
Kehua Zhong ◽  
...  
Keyword(s):  
Thin Films ◽  
Electronic Structure ◽  
Charge Transfer ◽  
Electric Field ◽  
External Electric Field ◽  
Topological Insulator ◽  
Electrical Field ◽  
External Electrical Field

The electronic structure and charge transfer of Bi2Te2Se and Bi2Se2Te thin films are robust to an external electrical field.

Magneto-transport properties of Fe thin films in an external electric field

2013 ◽  
Vol 63 (3) ◽  
pp. 612-615 ◽  
Author(s):  
K. Nakamura ◽  
T. Akiyama ◽  
T. Ito ◽  
M. Weinert ◽  
A. J. Freeman
Keyword(s):  
Thin Films ◽  
Electric Field ◽  
Transport Properties ◽  
External Electric Field
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