Thin-film deposition of (Ba/sub x/Sr/sub 1-x/)TiO/sub 3/ by pulsed ion beam evaporation

2000 ◽  
Vol 28 (5) ◽  
pp. 1545-1548 ◽  
Author(s):  
T. Sonegawa ◽  
K. Ohtomo ◽  
Weihua Jiang ◽  
K. Yatsui
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Thin Film Deposition ◽  
Film Deposition

Ion beam pretreatment of polymeric substrates for ITO thin film deposition

2008 ◽  
Vol 10 (7) ◽  
pp. 941-949 ◽  
Author(s):  
Jun-Sik Cho ◽  
Younggun Han ◽  
Jerome J. Cuomo
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Polymeric Substrates

Controlled thin-film deposition of α or β Ga2O3 by ion-beam sputtering

2020 ◽  
Vol 38 (6) ◽  
pp. 063412
Author(s):  
Martin Becker ◽  
Sebastian L. Benz ◽  
Limei Chen ◽  
Angelika Polity ◽  
Peter J. Klar ◽  
...  
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Ion Beam Sputtering ◽  
Beam Sputtering

Oxygen ion beam assisted thin film deposition

1990 ◽  
Vol 41 (3) ◽  
pp. 259-267 ◽  
Author(s):  
Reese Puckett ◽  
Lawrence Stelmack ◽  
Stephen Michel ◽  
Michael J. O'Connell ◽  
Paul Natishan
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Oxygen Ion

Pulsed Ion-Beam Evaporation for Thin-Film Deposition

2001 ◽  
Vol 40 (Part 1, No. 2B) ◽  
pp. 1026-1029 ◽  
Author(s):  
Weihua Jiang ◽  
Koji Ide ◽  
Shinji Kitayama ◽  
Tsuneo Suzuki ◽  
Kiyoshi Yatsui
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Thin Film Deposition ◽  
Film Deposition

scholarly journals Ion-beam-assisted thin film deposition.

1990 ◽  
Vol 2 (4) ◽  
pp. 218-225 ◽  
Author(s):  
Mitsuo Iwase ◽  
Susumu Masaki ◽  
Hiroshi Morisaki
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Thin Film Deposition ◽  
Film Deposition

Ion Beam Deposition, Film Modification and Synthesis

MRS Bulletin ◽  
1988 ◽  
Vol 13 (12) ◽  
pp. 40-45 ◽  
Author(s):  
S.M. Rossnagel ◽  
J.J. Cuomo
Keyword(s):  
Thin Film ◽  
Ion Beam ◽  
Thin Film Deposition ◽  
High Energy ◽  
Film Deposition ◽  
Ion Sources ◽  
Chamber Pressure ◽  
Fusion Plasmas ◽  
Angle Of Incidence ◽  
Beam Currents

Ion beam processing for thin film deposition is rapidly overtaking some of the more conventional plasma-based thin film processing techniques. This is due to strong improvements in the types and reliabilities of the sources available as well as a growing understanding of the advantages and capabilities of using ion beams.An ion beam process can be differentiated from a plasma-based process in that the plasma in an ion beam is generated away from the sample and a beam of ions is directed at the sample. In a plasma-based process, the sample is usually immersed in the plasma. This highlights the fundamental advantage of ion beam processing—control of the flux and energy of the ions incident on either a sample or a target (for sputter deposition). It is this control which is missing in plasma-based processing, where the ion flux (current), ion energy, chamber pressure, and gas species are all hopelessly intertwined. In addition, certain aspects of the ion bombardment—angle of incidence, complications of gas scattering, etc. —are essentially fixed in plasma-based processing, leaving no room to vary parameters, and in conjunction, film properties.A wealth of different types of ion sources cover a broad range of beam currents and energies. At the high energy end (0.1 – 20 MeV) are the implantation sources, typically used for doping semiconductors and treating surfaces (hardening, for example) and for various types of nuclear chemical analysis. These sources, however, tend to be very low current (μA). At slightly lower energies (tens of kilo-electron volts), but significantly higher currents (50 A), are the ion sources used for heating fusion plasmas.

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