Effect of the annealing process on CuInS2 thin films prepared by using aerosol jet deposition

2012 ◽  
Vol 60 (12) ◽  
pp. 2007-2012
Author(s):  
Rong Fan ◽  
Seon Mi Kong ◽  
Dong Chan Kim ◽  
Sung Hee Jung ◽  
Chee Won Chung
Keyword(s):  
Thin Films ◽  
Annealing Process ◽  
Cuins2 Thin Films ◽  
Aerosol Jet Deposition

Characterization of CuInS2 thin films prepared by aerosol jet deposition

2012 ◽  
Vol 521 ◽  
pp. 123-127 ◽  
Author(s):  
Rong Fan ◽  
Dong Chan Kim ◽  
Sung Hee Jung ◽  
Jae Ho Um ◽  
Wan In Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Cuins2 Thin Films ◽  
Aerosol Jet Deposition

A novel low-temperature growth of uniform CuInS2 thin films and their application in selenization/sulfurization-free CuInS2 solar cells

2021 ◽  
Vol 26 ◽  
pp. 102050
Author(s):  
Mehdi Dehghani ◽  
Ershad Parvazian ◽  
Nastaran Alamgir Tehrani ◽  
Nima Taghavinia ◽  
Mahmoud Samadpour
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Low Temperature ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Cuins2 Thin Films

Modulation of structural, electrical, optical and thermoelectric properties of MOCVD grown GdN thin films by nitrogen environment annealing process

Optik ◽  
2020 ◽  
Vol 206 ◽  
pp. 163435
Author(s):  
K. Mahmood ◽  
Jolly Jacob ◽  
M. Ibrahim ◽  
A. Ail ◽  
N. Amin ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermoelectric Properties ◽  
Annealing Process

Optimization of the annealing process and nanoscale piezoelectric properties of (002) AlN thin films

2017 ◽  
Vol 28 (13) ◽  
pp. 9295-9300 ◽  
Author(s):  
Bangran Fu ◽  
Fang Wang ◽  
Rongrong Cao ◽  
Yemei Han ◽  
Yinping Miao ◽  
...  
Keyword(s):  
Thin Films ◽  
Piezoelectric Properties ◽  
Annealing Process

scholarly journals Facile and Robust Solvothermal Synthesis of Nanocrystalline CuInS2 Thin Films

Nanomaterials ◽  
2018 ◽  
Vol 8 (6) ◽  
pp. 405 ◽  
Author(s):  
Anna Frank ◽  
Jan Grunwald ◽  
Benjamin Breitbach ◽  
Christina Scheu
Keyword(s):  
Thin Films ◽  
Solvothermal Synthesis ◽  
Cuins2 Thin Films

P-type ZnO thin films achieved by N+ ion implantation through dynamic annealing process

2012 ◽  
Vol 101 (11) ◽  
pp. 112101 ◽  
Author(s):  
M. A. Myers ◽  
M. T. Myers ◽  
M. J. General ◽  
J. H. Lee ◽  
L. Shao ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Implantation ◽  
Annealing Process ◽  
Zno Thin Films ◽  
P Type

Effect of Sulfurization Time on the Formation of CuInS2 Thin Films

2015 ◽  
Vol 44 (4) ◽  
pp. 805-807 ◽  
Author(s):  
Wang Ligang ◽  
Wang Yanlai ◽  
Yao Wei ◽  
Zhu Jun ◽  
Xu Jingang
Keyword(s):  
Thin Films ◽  
Cuins2 Thin Films ◽  
Sulfurization Time

Non-epitaxial, Highly Textured (001) CoPt:B2O3 Composite Films for Perpendicular Recording

2002 ◽  
Vol 721 ◽  
Author(s):  
M. L. Yan ◽  
N. Powers ◽  
D. J. Sellmyer
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Epitaxial Growth ◽  
Thermal Processing ◽  
Composite Films ◽  
Annealing Process ◽  
Perpendicular Anisotropy ◽  
Perpendicular Recording ◽  
Nanocomposite Thin Films ◽  
Deposited Films

AbstractWe report the non-epitaxial growth of highly textured (001) CoPt:B2O3 nanocomposite thin films that are deposited directly on thermally-oxidized Si wafers. Multilayers of Co/Pt/Co/B2O3 are deposited followed by appropriate thermal processing. The as-deposited films are disordered fcc CoPt phase, and magnetically soft. After annealing, an (001) orientation of CoPt-ordered grains is developed. The texture development is dependent both on the total film thickness and the annealing process. Nearly perfect (001) texture can be obtained in films with thinner initial layer thicknesses. Strong perpendicular anisotropy is shown to be related to this (001) texture.

Spray Chemical Vapor Deposition of CuInS2 Thin Films for Application in Solar Cell Devices

1997 ◽  
Vol 495 ◽  
Author(s):  
Jennifer A. Hollingsworth ◽  
William E. Buhro ◽  
Aloysius F. Hepp ◽  
Philip P. Jenkins ◽  
Mark A. Stan
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Fused Silica ◽  
Direct Band Gap ◽  
Cuins2 Thin Films ◽  
Potential Applications ◽  
Direct Band

ABSTRACTChalcopyrite CuInS2 is a direct band gap semiconductor (1.5 eV) that has potential applications in photovoltaic thin film and photoelectrochemical devices. We have successfully employed spray chemical vapor deposition using the previously known, single-source, metalorganic precursor, (Ph3P)2CuIn(SEt)4, to deposit CuInS2 thin films. Stoichiometric, polycrystalline films were deposited onto fused silica over a range of temperatures (300–400 °C). Morphology was observed to vary with temperature: spheroidal features were obtained at lower temperatures and angular features at 400 °C. At even higher temperatures (500 °C), a Cu-deficient phase, CuIn5S8, was obtained as a single phase. The CuInS2 films were determined to have a direct band gap of ca. 1.4 eV.

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