An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas

2011 ◽  
Vol 58 (3) ◽  
pp. 503-508 ◽  
Author(s):  
Jong-In Shim ◽  
Hyungsung Kim ◽  
Dong-Soo Shin ◽  
Han-Youl Yoo
2007 ◽  
Vol 994 ◽  
Author(s):  
Grant Z. Pan ◽  
Jaime Peretzman ◽  
Dae H. Pak ◽  
Li P. Ren

AbstractFour boron-implanted p-n junction silicon light-emitting diode structures were designed and simulated under an identical process flow by using Silvaco simulators. In the simulation, only boron-implant parameters and post-implant anneal conditions were varied to identify and compare the physical, electrical, and optical properties of the structures. It was found that a pillar structure with a wrapped p-n junction has the greatest radiative recombination rate. Regardless the structure type, the maximum radiative recombination rate always occurs within the p+ region. There exists a peak in the maximum radiative recombination rate when the anneal temperature increases from 700 to 1100 °C, and the anneal temperature at peak increases while the implant dose increases. Furthermore, the radiative recombination rate always increases with the implant dose but it saturates at a high dose. However, the radiative recombination rate does not change significantly with the implant energy.


2011 ◽  
Vol 99 (25) ◽  
pp. 251115 ◽  
Author(s):  
David S. Meyaard ◽  
Guan-Bo Lin ◽  
Qifeng Shan ◽  
Jaehee Cho ◽  
E. Fred Schubert ◽  
...  

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