An efficiency droop model of the saturated radiative recombination rate and its verification by radiative and nonradiative carrier lifetime measurements in InGaN-based light emitting diodes

2011 ◽  
Author(s):  
Jong-In Shim ◽  
Hyunsung Kim ◽  
Dong-Soo Shin ◽  
Han-Youl Ryu
Keyword(s):  
Recombination Rate ◽  
Radiative Recombination ◽  
Light Emitting Diodes ◽  
Carrier Lifetime ◽  
Efficiency Droop ◽  
Radiative Recombination Rate ◽  
Lifetime Measurements ◽  
Light Emitting ◽  
Droop Model

scholarly journals Study on efficiency droop in InGaN/GaN light-emitting diodes based on differential carrier lifetime analysis

2016 ◽  
Vol 108 (1) ◽  
pp. 013501 ◽  
Author(s):  
Xiao Meng ◽  
Lai Wang ◽  
Zhibiao Hao ◽  
Yi Luo ◽  
Changzheng Sun ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Carrier Lifetime ◽  
Efficiency Droop ◽  
Light Emitting ◽  
Lifetime Analysis

Temperature-dependent minority-carrier lifetime measurements of red AlGaAs light emitting diodes

1995 ◽  
Vol 24 (10) ◽  
pp. 1407-1412 ◽  
Author(s):  
F. M. Steranka ◽  
D. C. Defevere ◽  
Camras ◽  
S. L. Rudaz ◽  
D. K. Mc Elfresh ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Temperature Dependent ◽  
Lifetime Measurements ◽  
Light Emitting

Design and Simulation of High Efficiency Silicon Light-Emitting Diodes

2007 ◽  
Vol 994 ◽  
Author(s):  
Grant Z. Pan ◽  
Jaime Peretzman ◽  
Dae H. Pak ◽  
Li P. Ren
Keyword(s):  
Recombination Rate ◽  
Radiative Recombination ◽  
High Efficiency ◽  
Light Emitting Diode ◽  
Structure Type ◽  
High Dose ◽  
Radiative Recombination Rate ◽  
Light Emitting ◽  
Pillar Structure ◽  
Anneal Temperature

AbstractFour boron-implanted p-n junction silicon light-emitting diode structures were designed and simulated under an identical process flow by using Silvaco simulators. In the simulation, only boron-implant parameters and post-implant anneal conditions were varied to identify and compare the physical, electrical, and optical properties of the structures. It was found that a pillar structure with a wrapped p-n junction has the greatest radiative recombination rate. Regardless the structure type, the maximum radiative recombination rate always occurs within the p+ region. There exists a peak in the maximum radiative recombination rate when the anneal temperature increases from 700 to 1100 °C, and the anneal temperature at peak increases while the implant dose increases. Furthermore, the radiative recombination rate always increases with the implant dose but it saturates at a high dose. However, the radiative recombination rate does not change significantly with the implant energy.

Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes

2011 ◽  
Vol 99 (25) ◽  
pp. 251115 ◽  
Author(s):  
David S. Meyaard ◽  
Guan-Bo Lin ◽  
Qifeng Shan ◽  
Jaehee Cho ◽  
E. Fred Schubert ◽  
...  
Keyword(s):  
Carrier Transport ◽  
Light Emitting Diodes ◽  
Efficiency Droop ◽  
Light Emitting
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