Effects of laser-annealing using KrF excimer laser on surface, structural, optical, and electrical properties of AlZnO thin films

2010 ◽  
Vol 56 (3) ◽  
pp. 782-786 ◽  
Author(s):  
Deuk Young Kim ◽  
Sejoon Lee ◽  
Junje Seong
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Optical And Electrical Properties ◽  
Krf Excimer Laser

scholarly journals Optimizing the optical and electrical properties of graphene ink thin films by laser-annealing

2D Materials ◽  
2015 ◽  
Vol 2 (1) ◽  
pp. 011003 ◽  
Author(s):  
Sepideh Khandan Del ◽  
Rainer Bornemann ◽  
Andreas Bablich ◽  
Heiko Schäfer-Eberwein ◽  
Jiantong Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Laser Annealing ◽  
Optical And Electrical Properties

Study on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealing

2002 ◽  
Vol 46 (8) ◽  
pp. 1085-1090 ◽  
Author(s):  
Chang-Ho Tseng ◽  
Ching-Wei Lin ◽  
Teh-Hung Teng ◽  
Ting-Kuo Chang ◽  
Huang-Chung Cheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Dopant Activation ◽  
Silicon Thin Films ◽  
Krf Excimer Laser

scholarly journals Improving Optical and Electrical Properties of GaN Epitaxial Wafers and Enhancing Luminescent Properties of GaN-Based Light-Emitting-Diode with Excimer Laser Irradiation

Symmetry ◽  
2021 ◽  
Vol 13 (10) ◽  
pp. 1935
Author(s):  
Yijian Jiang ◽  
Haoqi Tan ◽  
Yan Zhao
Keyword(s):  
Electrical Properties ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
Laser Energy ◽  
Hole Concentration ◽  
Light Output ◽  
Annealing Treatment ◽  
Optical And Electrical Properties ◽  
Excimer Laser Irradiation ◽  
Krf Excimer Laser

The effect of KrF excimer laser irradiation on the optical and electrical properties of epitaxial wafers with a p-GaN surface were investigated at different laser energy densities and pulse numbers. The laser-irradiated samples were annealed in oxygen. The laser irradiation-induced changes in optical and electrical properties of GaN epitaxial wafers were examined using PL, I–V, XPS, SIMS, and Hall effect measurements. Experimental results show that under an appropriate laser-irradiated condition, optical and electrical properties of the samples were improved to different degrees. The samples which were annealed after laser irradiation have better electrical properties such as the hole concentration and sheet resistance than those without annealing. We hypothesize that the pulsed KrF excimer laser irradiation dissociates the Mg–H complexes and annealing treatment allows the hydrogen to diffuse out more completely under the oxygen atmosphere at a proper temperature, by which the crystalline symmetry of GaN is improved. Under appropriate laser conditions and O2-activated annealing, the light output of the laser-irradiated GaN-based LED sample is about 1.44 times that of a conventional LED at 20 mA. It is found that the wall-plug efficiency is 10% higher at 20 mA and the reverse leakage current is 80% lower at 5 V.

Effect of Gamma Radiation on Structural, Optical and Electrical Properties of nanostructured CdHgTe Thin Films

2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Gamma Radiation ◽  
Glass Substrate ◽  
Gamma Ray ◽  
Optical And Electrical Properties ◽  
Deposition Technique ◽  
Polycrystalline Structure ◽  
Dc Electrical Conductivity

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage

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