The effects of rapid thermal annealing on the performance of ZnO thin-film transistors

2009 ◽  
Vol 55 (5(1)) ◽  
pp. 1925-1930 ◽  
Author(s):  
Duck-Kyun Choi ◽  
Chan Jun Park ◽  
Sung Bo Lee ◽  
Young-Woong Kim
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors ◽  
Zno Thin Film

Effect of Rapid Thermal Annealing on the Electrical Characteristics of ZnO Thin-Film Transistors

2008 ◽  
Vol 47 (4) ◽  
pp. 2848-2853 ◽  
Author(s):  
Kariyadan Remashan ◽  
Dae-Kue Hwang ◽  
Seong-Ju Park ◽  
Jae-Hyung Jang
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors ◽  
Zno Thin Film ◽  
Electrical Characteristics

Thin-Film Transistors with Polycrystalline Silicon Films Prepared by Two-Step Rapid Thermal Annealing

2000 ◽  
Vol 39 (Part 2, No. 1A/B) ◽  
pp. L19-L21 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Chun-Yao Huang ◽  
Fang-Shing Wang ◽  
Kuen-Hsien Lin ◽  
Fu-Gow Tarntair
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films

Effect of rapid thermal annealing on pentacene-based thin-film transistors

2011 ◽  
Vol 61 (1) ◽  
pp. 76-80 ◽  
Author(s):  
D.W. Chou ◽  
C.J. Huang ◽  
C.M. Su ◽  
C.F. Yang ◽  
W.R. Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors

scholarly journals Improving Device Characteristics of Dual-Gate IGZO Thin-Film Transistors with Ar–O2 Mixed Plasma Treatment and Rapid Thermal Annealing

Membranes ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 49
Author(s):  
Wei-Sheng Liu ◽  
Chih-Hao Hsu ◽  
Yu Jiang ◽  
Yi-Chun Lai ◽  
Hsing-Chun Kuo
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Plasma Treatment ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Oxygen Plasma Treatment ◽  
Dual Gate ◽  
O2 Plasma

In this study, high-performance indium–gallium–zinc oxide thin-film transistors (IGZO TFTs) with a dual-gate (DG) structure were manufactured using plasma treatment and rapid thermal annealing (RTA). Atomic force microscopy measurements showed that the surface roughness decreased upon increasing the O2 ratio from 16% to 33% in the argon–oxygen plasma treatment mixture. Hall measurement results showed that both the thin-film resistivity and carrier Hall mobility of the Ar–O2 plasma–treated IGZO thin films increased with the reduction of the carrier concentration caused by the decrease in the oxygen vacancy density; this was also verified using X-ray photoelectron spectroscopy measurements. IGZO thin films treated with Ar–O2 plasma were used as channel layers for fabricating DG TFT devices. These DG IGZO TFT devices were subjected to RTA at 100 °C–300 °C for improving the device characteristics; the field-effect mobility, subthreshold swing, and ION/IOFF current ratio of the 33% O2 plasma–treated DG TFT devices improved to 58.8 cm2/V·s, 0.12 V/decade, and 5.46 × 108, respectively. Long-term device stability reliability tests of the DG IGZO TFTs revealed that the threshold voltage was highly stable.

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