The Characteristics of Hot-Carrier Stressed Bottom-Gate Polycrystalline Silicon Thin-Film Transistors Employing Alternating Magnetic-Field-Enhanced Rapid Thermal Annealing

2019 ◽  
Vol 16 (9) ◽  
pp. 67-72
Author(s):  
Won-Kyu Lee ◽  
Hee-Sun Shin ◽  
Kyusik Cho ◽  
Joonhoo Choi ◽  
Chi-Woo Kim ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Alternating Magnetic Field ◽  
Silicon Thin Film ◽  
Hot Carrier ◽  
Bottom Gate

The Effect of Electrical Stress on the New Top Gate N-type Depletion Mode Polycrystalline Thin Film Transistors Fabricated by Alternating Magnetic Field Enhanced Rapid Thermal Annealing

2008 ◽  
Vol 1066 ◽  
Author(s):  
Won-Kyu Lee ◽  
Sang-Myeon Han ◽  
Sang-Geun Park ◽  
Sung-Hwan Choi ◽  
Joonhoo Choi ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
State Density ◽  
Alternating Magnetic Field ◽  
Threshold Voltage Shift ◽  
Electrical Stress

ABSTRACTWe have fabricated the new top gate depletion mode n-type alternating magnetic field enhanced rapid thermal annealing (AMFERTA) polycrystalline silicon (poly-Si) thin film transistors (TFTs), which show the excellent electrical characteristics and superior stability compared with hydrogenated amorphous silicon (a-Si:H) TFTs and excimer laser crystallized (ELC) low temperature polycrystalline silicon (LTPS) TFTs. The fabricated AMFERTA poly-Si TFTs were not degraded under hot-carrier stress, and highly biased vertical field stress. The considerably large threshold voltage shift (ΔVTH) and trap state density reducing were occurred when the gate bias and drain bias were both large enough. The dominant mechanism of instability in the fabricated depletion mode AMFERTA poly-Si TFTs may be due to carrier induced donor-like defects reduction within the channel layer, especially near the drain junction.

Thin-Film Transistors with Polycrystalline Silicon Films Prepared by Two-Step Rapid Thermal Annealing

2000 ◽  
Vol 39 (Part 2, No. 1A/B) ◽  
pp. L19-L21 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Chun-Yao Huang ◽  
Fang-Shing Wang ◽  
Kuen-Hsien Lin ◽  
Fu-Gow Tarntair
Keyword(s):  
Thin Film ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon Films ◽  
Polycrystalline Silicon Films
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