Enhancement of Solid-phase Crystallization Kinetics of AmorphousSilicon by Annealing in a High-pressure H$_{2}$O Ambient

2009 ◽  
Vol 55 (1) ◽  
pp. 1-4
Author(s):  
R. Kakkad ◽  
B.D. Choi
Keyword(s):  
High Pressure ◽  
Crystallization Kinetics ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Kinetics Of

The mechanism of structural changes and crystallization kinetics of amorphous red phosphorus to black phosphorus under high pressure

2019 ◽  
Vol 55 (56) ◽  
pp. 8094-8097 ◽  
Author(s):  
Heng Xiang ◽  
Yuting Nie ◽  
Hechuang Zheng ◽  
Xuhui Sun ◽  
Xueliang Sun ◽  
...  
Keyword(s):  
High Pressure ◽  
Crystallization Kinetics ◽  
Structural Changes ◽  
Black Phosphorus ◽  
Crystallization Mechanism ◽  
Red Phosphorus ◽  
Kinetics Of

Revealing the untraditional crystallization mechanism of amorphous red phosphorus to black phosphorus under high pressure.

Ge-rich Si1-XGeX Nanocrystal Formation by the Oxidation of As-Deposited Thin Amorphous Si0.7Ge0.3 Layer

2002 ◽  
Vol 727 ◽  
Author(s):  
Tae-Sik Yoon ◽  
Ki-Bum Kim
Keyword(s):  
Selective Oxidation ◽  
Oxidation Rate ◽  
Solid Phase ◽  
Amorphous Film ◽  
Alloy Film ◽  
Spatial Density ◽  
Solid Phase Crystallization ◽  
Higher Temperature ◽  
20 Nm ◽  
Kinetics Of

AbstractGe-rich Si1-XGeX nanocrystals are formed by the selective oxidation of Si during the dry oxidation of an amorphous Si0.7Ge0.3 layer. The oxidation kinetics of the alloy film shows the activation energies of linear and parabolic rate constants are about 1.35 and 1.02 eV, respectively, based on the model proposed by Deal and Grove. In addition, as a result of the selective oxidation of Si and Ge pile-up during the oxidation process, Ge-rich Si1-XGeX nanocrystals are formed with the size of 5.6 ± 1.7 nm and the spatial density of 3.6×1011/cm2 at 600°C. At higher temperature of 700 and 800°C, the size of nanocrystal is increased to about 20 nm. The nanocrystals formation by oxidation is thought to be due to higher oxidation rate at grain boundary than at bulk grain. Therefore, the dependence of size on temperature is explained with the grain size determined by solid phase crystallization of amorphous film, oxidation rate, and grain growth.

Effect of High Pressure on Crystallization Kinetics of van der Waals Liquid: An Experimental and Theoretical Study

2014 ◽  
Vol 14 (5) ◽  
pp. 2097-2104 ◽  
Author(s):  
Karolina Adrjanowicz ◽  
Andrzej Grzybowski ◽  
Katarzyna Grzybowska ◽  
Jürgen Pionteck ◽  
Marian Paluch
Keyword(s):  
High Pressure ◽  
Crystallization Kinetics ◽  
Theoretical Study ◽  
Van Der Waals ◽  
Kinetics Of

Approaches to modifying solid phase crystallization kinetics for a-Si films

1996 ◽  
Vol 424 ◽  
Author(s):  
Reece Kingi ◽  
Yaozu Wang ◽  
Stephen Fonash ◽  
Osama Awadelkarim ◽  
Yuan-Mn Li
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Crystallization Kinetics ◽  
Solid Phase ◽  
Surface Treatments ◽  
Film Deposition ◽  
Crystallization Time ◽  
Solid Phase Crystallization ◽  
Furnace Annealing ◽  
Thermal Budget

AbstractThree approaches to modifying the solid phase crystallization kinetics of amorphous silicon thin films are examined with the goal of reducing the thermal budget and improving the poly-Si quality for thin film transistor applications. The three approaches consist of (1) variations in the PECVD a-Si deposition parameters; (2) the application of pre-fumace-anneal surface treatments; and (3) using both rapid thermal annealing and furnace annealing at different temperatures. We also examine the synergism among these approaches.Results reveal that (1) film deposition dilution and dilution/temperature changes do not strongly affect crystallization time, but do affect grain size; (2) pre-anneal surface treatments can dramatically reduce the solid phase crystallization thermal budget for diluted films and act synergistically with deposition dilution or dilution/temperature effects; and (3) rapid thermal annealing leads to different crystallization kinetics from that seen for furnace annealing.

Atomic structure of ion-implantation produced amorphous silicon and amorphous-crystalline interface structure and kinetics

1983 ◽  
Vol 41 ◽  
pp. 122-123
Author(s):  
J. Narayan ◽  
D. Fathy
Keyword(s):  
Solar Cells ◽  
Ion Implantation ◽  
Physical Properties ◽  
Amorphous Silicon ◽  
Crystallization Kinetics ◽  
Atomic Structure ◽  
Solid Phase ◽  
Interface Structure ◽  
Solid Phase Crystallization ◽  
Two Factors

The structure of amorphous silicon determines its physical properties ranging from crystallization kinetics to efficiency of solar cells. One point of particular interest has been the existance of microcrystallites in the amorphous phase. Different crystallization kinetics are obtained for purely amorphous silicon and for amorphous silicon having a trace of crystallinity. The incorporation of dopants into substitutional sites after solid-phase crystallization has been also found to be affected by the degree of amorphousness.The purpose of this investigation was two fold: first, to characterize the structure of amorphous silicon, and second to study the structure of amorphous-crystalline interface. The importance of these two factors in the crystallization phenomena is discussed.

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